Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO252 Search Results

    SF Impression Pixel

    TO252 Price and Stock

    Nextgen Components TO252MDD7N65DS

    MOSFET TO-252 N 650V 7A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO252MDD7N65DS Reel 20,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.8858
    		Buy Now

    Nextgen Components TO252MDD4N65DS

    MOSFET TO-252 N 650V 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO252MDD4N65DS Reel 15,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6855
    		Buy Now

    Artekit Labs DA-TO252-P233

    TO252 (DPAK 3-4 PINS) ADAPTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DA-TO252-P233 Bulk 213 1
    • 1 $2.12
    • 10 $1.591
    • 100 $1.2372
    • 1000 $1.0605
    • 10000 $1.0605
    		Buy Now

    Artekit Labs DA-TO252-5-P114

    TO252-5 (DPAK 5-6 PINS) ADAPTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DA-TO252-5-P114 Bulk 74 1
    • 1 $2.27
    • 10 $1.704
    • 100 $1.3256
    • 1000 $1.13625
    • 10000 $1.13625
    		Buy Now

    JST Manufacturing APLMK STO25-250N

    APP/DIE SET FOR JST PRESS APK2N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APLMK STO25-250N Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more TO252 price and stock on Findchips.com

    TO252 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TO-252 Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-252 Unknown TO-252 (MP-3Z) Original PDF
    TO252-3 Unknown Original PDF
    TO252-5 Unknown Original PDF
    TO-25-250E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-25-250E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-252AA Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO-252AA Package International Rectifier Case Outline and Dimensions Original PDF
    TO-252AA Package International Rectifier Case Outline and Dimensions Original PDF
    TO-252AA Package Intersil SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE Original PDF
    TO-252AA Package Intersil 16mm TAPE AND REEL Original PDF
    TO252C-3 ROHM Lsi Assembly Original PDF
    TO252C-5 ROHM Lsi Assembly Original PDF
    TO-252 Package Intersil 2 LEAD SURFACE MOUNT JEDEC TO-252 PLASTIC PACKAGE (FOR RECTIFIERS ONLY) Original PDF
    TO-252 Package Intersil 16mm TAPE AND REEL Original PDF

    TO252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4N06L30

    Abstract: IPD25N06S4L-30 4N06L
    Text: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD25N06S4L-30 PG-TO252-3-11 PG-TO252-3-11 4N06L30 726-IPD25N06S4L-30 4N06L30 IPD25N06S4L-30 4N06L

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS TO252 5Pin -DL3 2.29±0 .09 1.14 ± 0. 13 6. 54 ±0.19 0.52 ±0. 06 6 .04 ± 0.0 6 5 .34 ±0.1 2 0 . 5 ± 0. 1 2 1 . 27 0 .52 ±0.0 6 0. 51 2.5 ± 0. 5 0 ～0.2 5 MI N4.15 (1.7) (1.4) (0.9) 5. 34 ±0.12 (2.5) (4.8) GD-X00501M-0 Ver.2005-03-15


    Original     		PDF GD-X00501M-0

    Untitled

    Abstract: No abstract text available
    Text: パッケージ外形図 TO252 3Pin 1 . 14 ± 0. 1 3 6 . 5 4 ±0. 1 9 0.52 ±0 . 0 6 1 (0 ～ 10ﾟ) 3 0.76 ±0 . 1 2 0 . 52 ±0 . 0 6 2.28 0. 51 2 0.76 ±0. 12 0 ～0 . 2 5 2.5±0.5 0.83 ±0.19 6 . 0 4 ±0 . 06 5 . 3 4 ±0 . 1 2 2.29±0 . 0 9 2 .2 8 4.15 ～4.50


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Package : TO252-5 1. Embossed Carrier Tape 1.5 0 13.5 2.9 Max 1.5 Min Material : Polycarbonate + Carbon Static Protection : Conductive 16.0 ±0.3 +0.1 2.0 ±0.1 10.5 ±0.1 0.3 ±0.05 1.75 ±0.1 4.0 ±0.1 7.5 ±0.1 2.7 ±0.1 (Unit : mm) 8.0 ±0.1 6.9 ±0.1


    Original     		PDF O252-5

    04N80C3

    Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
    Text: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPD04N80C3 PG-TO252 Q47040-S4563 04N80C3 04N80C3 PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking

    00bc0w

    Abstract: BA50BC0FP ba50bc0 BA33BC0FP 18bc0w 50bc0w BA33BC0 33bc0w BA30BC0 ba60bc0
    Text: BA BC0 series Regulator ICs 1A Low-Dropout Voltage Regulator with Low Saturation BA BC0 series BA BC0 series offers a line of low saturation type regulators that can supply as low output current as 1A. The output voltage precision appears ±2%. By the lineup of output voltage, the package lineup of surface mounted TO252 and


    Original     		PDF O220FP) 00bc0w BA50BC0FP ba50bc0 BA33BC0FP 18bc0w 50bc0w BA33BC0 33bc0w BA30BC0 ba60bc0

    SP*02N60

    Abstract: P-TO252 SPD02N60 SPU02N60
    Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified


    Original     		PDF SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60

    1117-33

    Abstract: regulator 17-33 1117-3.3 1117 3.3 1117-ADJ AP1117 AP1117-ADJ 1117 voltage regulator
    Text: AP1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator „ Features „ General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO263, TO252, TO220,


    Original     		PDF AP1117 AP1117 1117-33 regulator 17-33 1117-3.3 1117 3.3 1117-ADJ AP1117-ADJ 1117 voltage regulator

    DXT2010

    Abstract: DXT2010P5 DXT2010P5-13
    Text: A Product Line of Diodes Incorporated DXT2010P5 ADVANCE INFORMATION 60V NPN MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W


    Original     		PDF DXT2010P5 OT223; J-STD-020 MIL-STD-202, DS32011 DXT2010 DXT2010P5 DXT2010P5-13

    DXT2012

    Abstract: DXT2012P5 DXT2012P5-13 sot223 code r1k
    Text: A Product Line of Diodes Incorporated DXT2012P5 ADVANCE INFORMATION 60V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W


    Original     		PDF DXT2012P5 OT223; J-STD-020 MIL-STD-202, DS32070 DXT2012 DXT2012P5 DXT2012P5-13 sot223 code r1k

    DTP3200B

    Abstract: DXTP03200BP5 DXTP03200BP5-13
    Text: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W


    Original     		PDF DXTP03200BP5 OT223; -200V J-STD-020 MIL-STD-202, DS32068 DTP3200B DXTP03200BP5 DXTP03200BP5-13

    3010KM

    Abstract: SI-3012KM SI-3018KM SI-3025KM SI-3033KM
    Text: 1-1-1 Linear Regulator ICs SI-3000KM Series Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings Ta=25°C • Compact surface mount package (TO252-5) Ratings Parameter • Low dropout voltage: VDIF ≤ 0.6 V (at IO = 1.0


    Original     		PDF SI-3000KM O252-5) SI-3010KM/3050KM/ 3090KM/3120KM SI-3012KM/3018KM 3025KM/3033KM 3010KM SI-3012KM SI-3018KM SI-3025KM SI-3033KM

    AN 7274

    Abstract: Q67006-A9728 AEB03613 AEP02281 AEP02512 P-TO252-3-11
    Text: 5-V Low Drop Voltage Regulator TLE 7274 Features • • • • • • Output voltage 5 V ±2% Ultra low current consumption: typ. 20µA 300 mA current capability Very low-drop voltage Short-circuit-proof Suitable for use in automotive electronics P-TO252-3-1


    Original     		PDF P-TO252-3-1 P-TO263-3-1 AN 7274 Q67006-A9728 AEB03613 AEP02281 AEP02512 P-TO252-3-11

    16cn10n

    Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
    Text: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		PDF IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1

    f100 150 5

    Abstract: No abstract text available
    Text: 1-1-1 Linear Regulator ICs SI-3000KM Series Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings Ta=25°C • Compact surface mount package (TO252-5) Ratings Parameter • Low dropout voltage: VDIF ≤ 0.6 V (at IO = 1.0


    Original     		PDF SI-3000KM O252-5) SI-3010KM/SI-3050KM/SI3090KM/SI-3120KM) SI3012KM/SI-3018KM/SI-3025KM/SI-3033KM) f100 150 5

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
    Text: SPD25N06S2-40 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427


    Original     		PDF SPD25N06S2-40 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 a6024

    TO252C-3

    Abstract: No abstract text available
    Text: TO252C-3 LSI Assembly Units : mm • TO252C-3 1.5 6.5 5.1 5.5 FIN 0.65 2 3 0.8 1 0.65 0.75 2.3 2.3 H=1.3Max. The contents described herein are subject to change without notice. Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any


    Original     		PDF O252C-3 TO252C-3

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Text: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6

    Untitled

    Abstract: No abstract text available
    Text: パッケージ外形図 1 . 1 4 ±0 . 1 3 TO252 3Pin 6 .5 4 ± 0. 1 9 0.52 ±0.06 1 ( 0 ~ 10 ﾟ) 3 0.76 ± 0 . 1 2 0.52 ±0.06 2.28 0. 51 2 0.76 ±0.12 0 ∼0.25 2.5±0.5 0.83 ± 0.1 9 6.04 ±0.06 5.34 ±0.12 2.29±0.09 2.28 MIN4.15 ( 1. 7) ( 1. 4) ( 0. 9)


    Original     		PDF

    IEC61249-2-21

    Abstract: IPP26CNE8N 25CNE8N
    Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N IEC61249-2-21 IEC61249-2-21 25CNE8N

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 IPB26CN10NG IPI26CN10NG IPP26CN10NG IEC61249-2-21 ds 1-08 diode

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 30 V R DS on 10 m ID 30 A P- TO252 -3-11  Low On-Resistance RDS(on)  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance


    Original     		PDF SPD30N03S2L-10 Q67042-S4030 2N03L10 BSPD30N03S2L-10, SPD30N03S2L-10

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L