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    NGB8206NT4G Price and Stock

    Littelfuse Inc NGB8206NT4G

    IGBT 390V 20A D2PAK
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    DigiKey NGB8206NT4G Reel 800
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    Rochester Electronics LLC NGB8206NT4G

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey NGB8206NT4G Bulk 254
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    onsemi NGB8206NT4G

    Trans IGBT Chip N-CH 390V 20A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NGB8206NT4G)
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    Avnet Americas NGB8206NT4G Reel 4 Weeks 306
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    Newark NGB8206NT4G Bulk 310
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    Rochester Electronics NGB8206NT4G 892 1
    • 1 $1.19
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    ComSIT USA NGB8206NT4G 150
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    NGB8206NT4G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NGB8206NT4G On Semiconductor Ignition IGBT 20 A, 350 V, N-Channel D2PAK Original PDF
    NGB8206NT4G On Semiconductor NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor Original PDF

    NGB8206NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    418B-04

    Abstract: GB8206
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206

    8206NG

    Abstract: NGB8206
    Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8206N NGB8206N/D 8206NG NGB8206

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    Untitled

    Abstract: No abstract text available
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D

    GB8206

    Abstract: NGB8206A NGB8206NG
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG

    GB8206

    Abstract: No abstract text available
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206

    8206NG

    Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G
    Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G