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    GB8206 Search Results

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    GB8206 Price and Stock

    Rochester Electronics LLC NGB8206ANT4G

    IGBT, 20A, 390V, N-CHANNEL
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    DigiKey NGB8206ANT4G Bulk 32,020 417
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    • 1000 $0.72
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    Rochester Electronics LLC NGB8206NTF4G

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey NGB8206NTF4G Bulk 12,600 254
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    Rochester Electronics LLC NGB8206NSL3

    IGBT, 20A, 390V, N-CHANNEL
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    DigiKey NGB8206NSL3 Bulk 3,350 592
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    onsemi NGB8206N

    IGBT 390V 20A 150W D2PAK
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    DigiKey NGB8206N Tube
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    onsemi NGB8206NG

    IGBT 390V 20A 150W D2PAK
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    DigiKey NGB8206NG Tube
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    Avnet Americas NGB8206NG Tube 4 Weeks 713
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    Newark NGB8206NG Bulk 720
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    • 1000 $0.586
    • 10000 $0.46
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    Rochester Electronics NGB8206NG 1,788 1
    • 1 $0.5119
    • 10 $0.5119
    • 100 $0.4812
    • 1000 $0.4351
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    Find more GB8206 price and stock on Findchips.com

    GB8206 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    418B-04

    Abstract: GB8206
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206

    Untitled

    Abstract: No abstract text available
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D

    GB8206

    Abstract: NGB8206A NGB8206NG
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG

    GB8206

    Abstract: No abstract text available
    Text: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206

    8206NG

    Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G
    Text: GB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G