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    GB8206N Search Results

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    GB8206N Price and Stock

    onsemi NGB8206N

    IGBT 390V 20A 150W D2PAK
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    DigiKey NGB8206N Tube 450
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    onsemi NGB8206NG

    IGBT 390V 20A 150W D2PAK
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    DigiKey NGB8206NG Tube
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    Rochester Electronics NGB8206NG 1,788 1
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    Rochester Electronics LLC NGB8206NG

    IGBT 390V 20A D2PAK
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    DigiKey NGB8206NG Tube 592
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    onsemi NGB8206NTF4

    IGBT 390V 20A 150W D2PAK3
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    DigiKey NGB8206NTF4 Reel
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    ComSIT USA NGB8206NTF4 447
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    Rochester Electronics LLC NGB8206NT4G

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey NGB8206NT4G Bulk 254
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    GB8206N Datasheets Context Search

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    8206NG

    Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G
    Text: GB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


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    NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G PDF