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    NGB8206NG Price and Stock

    onsemi NGB8206NG

    IGBT 390V 20A 150W D2PAK
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    Rochester Electronics NGB8206NG 1,788 1
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    Rochester Electronics LLC NGB8206NG

    IGBT 390V 20A D2PAK
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    DigiKey NGB8206NG Tube 592
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    NGB8206NG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NGB8206NG On Semiconductor Ignition IGBT 20 A, 350 V, N-Channel D2PAK Original PDF
    NGB8206NG On Semiconductor NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor Original PDF

    NGB8206NG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    418B-04

    Abstract: GB8206
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206

    8206NG

    Abstract: NGB8206
    Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8206N NGB8206N/D 8206NG NGB8206

    Untitled

    Abstract: No abstract text available
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D

    GB8206

    Abstract: NGB8206A NGB8206NG
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG

    GB8206

    Abstract: No abstract text available
    Text: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8206N, NGB8206AN NGB8206N/D GB8206

    8206NG

    Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G
    Text: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G