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    NEC DIODES Search Results

    NEC DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    NEC DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


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    PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    S1L50282F23K100

    Abstract: NL2432DR22-11B 2.6 TFT color LCD Module 240 X 320 nec tft display module photodetector nec DOD-N-0249 S1L50282f S1L50282F2 3.2 tft color touch lcd display module Traffic Light Controller Circuit Block Diagram
    Text: DOD-N-0249 1/20 NEC Corporation NEC Electron Devices Display Device Operations Unit Color LCD Division 2nd Engineering Department TFT COLOR LCD MODULE Type: NL2432DR22-11B 8.9cm 3.5 Type , QVGA SPECIFICATIONS (Second Edition, July 10, 2001) PRELIMINARY


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    PDF DOD-N-0249 NL2432DR22-11B DOD-N-0206 4552g S1L50282F23K100 NL2432DR22-11B 2.6 TFT color LCD Module 240 X 320 nec tft display module photodetector nec DOD-N-0249 S1L50282f S1L50282F2 3.2 tft color touch lcd display module Traffic Light Controller Circuit Block Diagram

    Untitled

    Abstract: No abstract text available
    Text: DOD-N-0114 1/20 TFT COLOR LCD MODULE Type: NL3224CR24-04A 9.6cm 3.8 Type , QVGA SPECIFICATIONS (First Edition) PRELIMINARY This document is preliminary. All information in this document is subject to change without prior notice. NEC Corporation NEC Electron Devices


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    PDF DOD-N-0114 NL3224CR24-04A

    Untitled

    Abstract: No abstract text available
    Text: QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES CONTENTS 1. INTRODUCTION . 2 2. QUALITY GRADES AND APPLICATIONS .


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    PDF

    AUTOMATIC light dim dip CONTROLLER

    Abstract: data sheet 1734352-1 LXML-PM01 RS-232 protocol omron APDS-9005 rs232 level converter dmx rs232 converter dmx Luxeon K2 driver schematic Thermistor NTC-10 dmx-512
    Text: User’s Manual 78K0 - Shine It! Demonstration Board for NEC Electronics µPD78f8024 High-CurrentDrive/LED Microcontroller Document No. U19610EE3V0UM00 Date Published May 2009 NEC Electronics Europe GmbH 78K0 - Shine It! • The information in this document is current as of June, 2008. The information is subject to change


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    PDF PD78f8024 U19610EE3V0UM00 AUTOMATIC light dim dip CONTROLLER data sheet 1734352-1 LXML-PM01 RS-232 protocol omron APDS-9005 rs232 level converter dmx rs232 converter dmx Luxeon K2 driver schematic Thermistor NTC-10 dmx-512

    transistor T2S

    Abstract: No abstract text available
    Text: Information Latch-up Document No. C11959EJ2V0IF00 2nd edition Date Published July 1997 N Printed in Japan 1997 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in


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    PDF C11959EJ2V0IF00 transistor T2S

    M9627

    Abstract: uPC451g SMD 6PIN IC MARKING CODE PR-53365 NIHON SMD MARKING codes sealed relay ge mil 7451 UPD65013 smd code marking NEC g GE4F tanaka AL wire
    Text: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 1989 Document No. C10535EJ8V0IF00 8th edition Date Published February 1997 N Printed in Japan No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in


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    PDF C10535EJ8V0IF00 M9627 uPC451g SMD 6PIN IC MARKING CODE PR-53365 NIHON SMD MARKING codes sealed relay ge mil 7451 UPD65013 smd code marking NEC g GE4F tanaka AL wire

    1ss421

    Abstract: TMP86FH12MG SSM3J108TU SSM3K101TU SSM3K102TU SSM3K104TU SSM3K105TU SSM3K106TU SSM3K107TU SSM3K116TU
    Text: TOSHIBA SEMICONDUCTOR BULLETIN EYE JANUARY 2006 VOLUME 162 CONTENTS INFORMATION Toshiba and NEC Electronics to Collaborate on 45-nanometer System LSI Process


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    PDF 45-nanometer 2021-size 1ss421 TMP86FH12MG SSM3J108TU SSM3K101TU SSM3K102TU SSM3K104TU SSM3K105TU SSM3K106TU SSM3K107TU SSM3K116TU

    RD10JS

    Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
    Text: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing


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    PDF RD39JS DO-34 DO-34; RD39JS RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS 2JS marking NEC RD4.7JS RD5.1JS

    IN5221B

    Abstract: IN5221 1n5221 1n5224b-1
    Text: NEC 5 0 0 m w ZENER D IO D E ELECTRON DEVICE 1N5221B thru 1N5271B NEC Type 1N5221B through 1N5271B Series are DHD D ouble Heatsink Diode con structio n planar ty p e zener diodes possessing an allowable power dissipation Outline Drawing {Unit : mm) o f 500m w a tt.


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    PDF 1N5221B 1N5271B 1N5271B DO-35 500mW IN5221B IN5221 1n5221 1n5224b-1

    Zener diode 224

    Abstract: RD24E RD22E RD2.4E zener rd9.1esb2
    Text: NEC 5 0 0 m w ZENER D IO D E ELECTRON DEVICE R D 2.0E —RD 100E Outline Drawing U nit: mm NEC Type RD l“ J E Series are DHD (Double Heatsink Diode) construction planar type zener diodes possessing an allowable power dissipation of 500 m watt. T FEA TU R E S


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    PDF DO-35 RD100E Zener diode 224 RD24E RD22E RD2.4E zener rd9.1esb2

    HIN238

    Abstract: LT1338
    Text: User’s Manual NEC How to Use 1C for RS-232 Line Driver/Receivers /¿PD4711B /¿PD4712C/4712D /¿PD4713A /¿PD4714A /¿PD4715A /iPD4721 /iPD4722 /¿PD4723 /iPD4724 /iPD4726 Document No. S13354EJ1V0UM00 1st edition Date Published July 1998 N CP(K) NEC Corporation 1998


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    PDF RS-232 S13354EJ1V0UM00 HIN238 LT1338

    Untitled

    Abstract: No abstract text available
    Text: N E C NEC ELECTRONICS INC 72 DE 72C 0 9 1 6 5 F b457525 SG205D/T GREEN GaP LEDs NEC Electronics Inc. NEPOC SERIES Absolute Maxim um R a tin gs Description Ta = +25°C The SG 2 0 5 D and SG 20 5 T are G a P Gallium Phos­ phide light emitting diodes which are mounted on lead


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    PDF b457525 SG205D/T 100mW SG205D/luminous SG205T. SG205D/T hM27525

    nec VARIABLE CAPACITANCE DIODE

    Abstract: ND6361-3A ND6361-3D diode 3D
    Text: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L


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    PDF L427414 ND6361-3A ND6361-3D WD6361 ND6361-3D. b4S7414 ND6361 nec VARIABLE CAPACITANCE DIODE ND6361-3D diode 3D

    impatt diode

    Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
    Text: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


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    PDF b427414 ND8N40W ND8L60W-1T ND8J80W ND8G96W-1T impatt diode DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTOCOUPLER PS2607,PS2608,PS2607L,PS2608L HIGH ISOLATION VOLTAGE AC INPUT, HIGH CTR 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2607, PS2608, PS2607L, PS2608L are optically coupled isolators containing GaAs light emitting diodes


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    PDF PS2607 PS2608 PS2607L PS2608L PS2607, PS2608, PS2607L, PS2608L

    PW10A

    Abstract: No abstract text available
    Text: NEC / ' PRELIMINARY DATA SHEET_ LASER DIODE NDL7513P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7513P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diodes


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    PDF NDL7513P 1310nm 110mW 400mA NDL7513P1 P10470EJ1V0DS00 400mA PW10A

    PS2705-4

    Abstract: transistor RJH 30
    Text: NEC HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI OPTOCOUPLER PS2705-1 PS2705-2 PS2705-4 FEATURES_ DESCRIPTION_ • PS2705-1, -2 and -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.


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    PDF PS2705-1 PS2705-2 PS2705-4 PS2705-1, PS2705-4 transistor RJH 30

    PS2705-4

    Abstract: PS270S4 PS2705
    Text: NEC HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI OPTOCOUPLER PS2705-1 PS2705-2 pS2705-4 FEATURES_ DESCRIPTION • PS2705-1, -2 and -4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor.


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    PDF PS2705-1 PS2705-2 pS2705-4 PS2705-1, PS2705-4 24-Hour PS270S4 PS2705

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC E.S.D NOISE CLIPPING DIODES NNCD3.3C to NNCD12C ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE This product series is a diode developed for E.S.D (Electrostatic PACKAGE DIMENSIONS Discharge) noise protection. Based on the IEC1000-4-2 test on


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    PDF NNCD12C IEC1000-4-2 NNCD12C IEC1000-42) NNC011C NNC012C

    NEC zener diode 35 series

    Abstract: RD10PB MEC International RD12PB diode zener nec RD18P R039P RD10P RD13P RD15P
    Text: _ PRELIM INARY SPECIFICA TIO N ZENER DIODES RD4.7P —RD39P 1 W POWER MINI MOLD ZENER DIODE NEC Type RD[ ] P Series are Power Mini Mold Package zener diodes possessing an allowable power dissipation of 1 watt. FEATURES OUTLINE DRAWING U n it: mm


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    PDF RD39P R039P J22686 NEC zener diode 35 series RD10PB MEC International RD12PB diode zener nec RD18P R039P RD10P RD13P RD15P

    40SB04SA

    Abstract: shottky
    Text: NEC 40A SHOTTKY BARRIER DIODE ELECTRON DEVICE ü — ji _ _ _ 40SB03SA,40SB04SA 40SB03SA and 40SB04SA are shottky barrier diodes o f which forward average current is 40A. OUTLINE DRAWING U nit: mm FEATURES • Low forward voltage drop. • Very fast recovery time.


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    PDF 40SB03SA 40SB04SA 40SB04SA Tc-81 shottky

    10091

    Abstract: UPC318 upc318c LM318 10092 nec T-79-07-10
    Text: N E C EL E C T R O N IC S 6427525 N E C INC ö l DE J b 4 2 7 S E S ODlOOñ'í 8IC 10089 ELECTRONICS INC NEC NEC Electronics Inc. D ^ T-79-07-10 \ yUPC318 HIG H -SPEED O PERA TIO N A L A M P L IF IE R D escription The¿/PC31 8 is a precision high-speed operational am pli­


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    PDF T-79-07-10 UPC318 /PC31 /PC318 10091 upc318c LM318 10092 nec T-79-07-10

    1S1855

    Abstract: diode 5f NEC 1s1855 1S1857 1S1856 snap-off diode ND1551-7F ND1561-5F ND1571-5F
    Text: NEC / 1SE D CALIFORNIA NEC b427414 0001*134 V - 0 7 't f ND1 5 5 1 -7 F ND1 5 6 1 -5 F ND1 5 7 1 -5 F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES • U L T R A S H O R T R E V E R S E TU R N O N TIME Units in mm OUTLINE 5F • H IG H RELIABILITY • LO W C O S T


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    PDF b427414 ND1551-7F ND1561-5F ND1571-5F ND1551 ND1571-5F ND1551-7F, ND1561-5F, 1S1855 diode 5f NEC 1s1855 1S1857 1S1856 snap-off diode