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    ND6361 Search Results

    ND6361 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ND6361-3A Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    ND6361-3A NEC 100 V, C-band silicon PIN diode Scan PDF
    ND6361-3D Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    ND6361-3D NEC 100 V, C-band silicon PIN diode Scan PDF
    ND6361-3F NEC 100 V, 10 mA, microwave silicon PIN diode Scan PDF

    ND6361 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MI407

    Abstract: MI402 610F MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D
    Text: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33


    OCR Scan     		PDF MA556 MA557 MI303 MI308 12MAX S3129 MI407 MI402 610F ND6281-3A ND6361-3A ND6361-3D

    Microwave PIN diode

    Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
    Text: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71


    OCR Scan     		PDF b4E7M14 ND6000 ND6261 ND6361, ND6461, ND6481, ND6651, ND6261, 71r81, Microwave PIN diode 1SV36 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471

    BM 78a

    Abstract: MI407 MI402 MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D
    Text: - & fi £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33


    OCR Scan     		PDF MA556 MA557 MI303 MI308 100ns M651-3A ND6651-3D S3005 S3023 BM 78a MI407 MI402 ND6281-3A ND6361-3A ND6361-3D

    MI402

    Abstract: MI407 MI308 MI204 MA556 MA557 MI303 ND6281-3A ND6361-3A ND6361-3D
    Text: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33


    OCR Scan     		PDF MA556 MA557 MI303 MI308 100ns M651-3A ND6651-3D S3005 S3023 MI402 MI407 MI204 ND6281-3A ND6361-3A ND6361-3D

    MI407

    Abstract: MI402 MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D ND6651-3D
    Text: - fi & £ ö S MA556 fö T MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33


    OCR Scan     		PDF MA556 MA557 MI303 MI308 100ns M651-3A ND6651-3D S3005 S3023 MI407 MI402 ND6281-3A ND6361-3A ND6361-3D

    Microwave PIN diode

    Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
    Text: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61


    OCR Scan     		PDF fa4274m ND6000 T-07-/S ND6261 ND6361, ND6461, ND6481, ND6651. ND6261, Microwave PIN diode N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a

    MI308

    Abstract: MI402 MI407 53005 MA556 MA557 MI303 ND6281-3A ND6361-3A ND6361-3D
    Text: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33


    OCR Scan     		PDF MA556 MA557 MI303 MI308 100ns M651-3A ND6651-3D S3005 S3023 MI402 MI407 53005 ND6281-3A ND6361-3A ND6361-3D

    MI204

    Abstract: MI407 MI402 MI301 53005 ND6281-3A MA556 MA557 MI303 MI308
    Text: - & fi £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33


    OCR Scan     		PDF MA556 MA557 MI303 MI308 100ns M651-3A ND6651-3D S3005 S3023 MI204 MI407 MI402 MI301 53005 ND6281-3A

    MI407

    Abstract: MI402 MI204 MI303 MA556 MA557 MI308 ND6281-3A ND6361-3A ND6361-3D
    Text: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33


    OCR Scan     		PDF MA556 MA557 MI303 MI308 100ns M651-3A ND6651-3D S3005 S3023 MI407 MI402 MI204 ND6281-3A ND6361-3A ND6361-3D

    nec VARIABLE CAPACITANCE DIODE

    Abstract: ND6361-3A ND6361-3D diode 3D
    Text: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L


    OCR Scan     		PDF L427414 ND6361-3A ND6361-3D WD6361 ND6361-3D. b4S7414 ND6361 nec VARIABLE CAPACITANCE DIODE ND6361-3D diode 3D