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nec VARIABLE CAPACITANCE DIODE Abstract: ND6361-3A ND6361-3D diode 3D Text: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L	OCR Scan	PDF	L427414 ND6361-3A ND6361-3D WD6361 ND6361-3D. b4S7414 ND6361 nec VARIABLE CAPACITANCE DIODE ND6361-3D diode 3D

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nec VARIABLE CAPACITANCE DIODE

Abstract: ND6361-3A ND6361-3D diode 3D
Text: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L

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L427414 ND6361-3A ND6361-3D WD6361 ND6361-3D. b4S7414 ND6361 nec VARIABLE CAPACITANCE DIODE ND6361-3D diode 3D