NEC k 3654
Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
Original
|
PDF
|
NE850R599A
NE850R599A
CODE-99
NEC k 3654
gl 7445
nec k 813
nec 8725
gm 8562
5942
A 7601 0549
|
NE9004
Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900
Text: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
|
Original
|
PDF
|
NE850R5
NE9001/9002
NE9000
NE1280
NE85001
NE9004
24-Hour
NE9004
NE850R5
9002
NE85001
NE9000
NE9001
ne900
|
NE8500100
Abstract: NE850R599
Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB VDSX Drain to Source Voltage
|
Original
|
PDF
|
NE850R599
NE850R599
24-Hour
NE8500100
|
nec microwave
Abstract: MESFET NE850R599A NEC Microwave Semiconductors NE8500100
Text: C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 0.5 W PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB 5.2±0.3 • HIGH EFFICIENCY (PAE): 38% 1.0±0.1 • SUPERIOR INTERMODULATION DISTORTION 4.0 MIN BOTH LEADS
|
Original
|
PDF
|
NE850R599A
NE850R599A
NE8500100
24-Hour
nec microwave
MESFET
NEC Microwave Semiconductors
|
micro servo 9g
Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
|
Original
|
PDF
|
V20HL,
V25HS,
V30HL,
V30MX,
V35HS,
V40HL,
V50HL,
V55PI,
X10679EJDV0SG00
micro servo 9g
uPa2003
micro servo 9g tower pro
2SK1060
uPD3599
201 Zener diode
2SK2396
upc1237
infrared sensor TSOP - 1836
2SK518
|
NE850R5
Abstract: NE850R599
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
|
Original
|
PDF
|
X13769XJ2V0CD00
PC8119T
PC8120T
PC8130TA
PC8131TA
PG175TA
PC2723T
PC3206GR
PC2748
PC2745
2SK2396
PC2763
pc1658
ne27283
2SC3545
2SC3357
2sc2757
ne93239
2SC2570A
PC2711
|
uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
|
Original
|
PDF
|
PD43256A>
PD43256A
X13769XJ2V0CD00
PD750004
PD750006
PD750008
PD75P0016
PD750104
PD750106
PD750108
uPD16305
uPD63724A
upc5024
UPC5023
2SC1940
uPC1237
uPD65656
UPC458
UPC2710
UPD65943
|
nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
|
Original
|
PDF
|
X13769XJ2V0CD00
950MHz
500MHz
PC2794
PC1687
PC2744
PC2775/µ
nf025
NE27283
upc27
x-band power transistor 100W
NE42484
P147D
2SK2396
uPG508
nf025db
2SC5408
|
lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
|
Original
|
PDF
|
X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
|
65004
Abstract: 850R5 NE8500199 NE6500496 NE850R599 marking 101 california 1503
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 96/99 5.2±0.3 MARKING 1.0±0.1 YEAR INDICATOR f 2.2±0.2 4.0 MIN BOTH LEADS 4.3±0.2 MONTH INDICATOR B +.06 0.1 -.02 4.0±0.1 MONTH
|
Original
|
PDF
|
NE6500496
NE850R599
NE8500199
850R5
24-Hour
800-390-3ngs
65004
850R5
NE8500199
NE6500496
NE850R599
marking 101
california 1503
|
MICROPROCESSOR Z80
Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call
|
Original
|
PDF
|
Z80TM
V20TM,
V20HLTM,
V25TM,
V25HSTM,
V30TM,
V30HLTM,
V33TM,
V33ATM,
V35TM,
MICROPROCESSOR Z80
uPD72020
uPC5102
transistor 2p4m
UPD6487
2SD1557
2SJ 3305
UPD77529
TRANSISTOR SOD MARKING CODE 352A
micro servo 9g tower pro
|
nec k 813
Abstract: NE850R599A nec 8725
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
|
Original
|
PDF
|
P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
|
|
|
ne6500278
Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
Text: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL
|
Original
|
PDF
|
NEZ4450-15D/15DL
NES1821P-50
NES1821B-30
NEZ5964-15D/15DL
NES2527B-30
NEZ6472-15D/15DL
NEZ3642-15D/15DL
NEZ7785-15D/15DL
NEZ7177-8D/8DL
NEZ3642-8D
ne6500278
NEZ1414
NES2527B-30
NE1280100
NE6501077
NE85001
NE850R5
NES1821B-30
NES1821P-50
|
uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。
|
Original
|
PDF
|
PD43256A
X13769XJ2V0CD00
PD750004
PD750006
PD750008
PD75P0016
PD750104
PD750106
PD750108
uPD72002-11
uPD16305
uPC1237
upc1701
uPD65656
2SD1392
2sb1099
UPD65625
uPD78F0841
uPG508
|
cd 1619 CP AUDIO
Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
OCR Scan
|
PDF
|
NE850R599A
NE850R599A
CODE-99
cd 1619 CP AUDIO
cd 1691 cp
IC cd 1619 CP
ic HT 8970
cd 1619 CP
of cd 1619 cp
ic SL 1626
HT 25-19
5942
nec 8725
|
NEC Microwave Semiconductors
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES_ OUTLINE DIMENSIONS • HIGH O U T P U T POW ER: 0.5 W Units in mm PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB • HIG H EFFICIENC Y (PAE): 38% • SU PER IO R IN TER M O D U LA TIO N DISTORTIO N
|
OCR Scan
|
PDF
|
NE850R599A
E850R599A
NE8500100
NE850R599A
NEC Microwave Semiconductors
|
NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
|
OCR Scan
|
PDF
|
NE850R5
NE850R599
CODE-99
|
63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
|
OCR Scan
|
PDF
|
NE850R5
E850R599
CODE-99
63000-000
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
|
OCR Scan
|
PDF
|
NE850R599A
NE850R599A
CODE-99
|
nec microwave
Abstract: NEC Microwave Semiconductors
Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS FEATURES HIGH OUTPUT POWER: 0 5 W Units in r PACKAGE OUTLINE 99 HIGH LINEAR GAIN: 9 5 dB -5.2i0.3-*j HIGH EFFICIENCY (PAE : 38% - 1 . 0 ± 0.1 N SUPERIOR INTERMODULATION DISTORTION
|
OCR Scan
|
PDF
|
NE850R599A
NE850R599A
NE8500100
950S4-1817
24-Hour
nec microwave
NEC Microwave Semiconductors
|
850R599
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB V dsx Drain to Source Voltage
|
OCR Scan
|
PDF
|
NE850R599
NE850R599
IS12I
IS22I
IS12S21I
24-Hour
850R599
|
ne900075
Abstract: NE9000
Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27
|
OCR Scan
|
PDF
|
NEZ1414-2E
NEZ1414-4E
NEZ1414-8E
NEZ1011-2E
NEZ1011-8E
ne900075
NE9000
|
