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Catalog Datasheet	MFG & Type	Document Tags	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518	PDF
NE6500278 Abstract: C10535E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
GaAs MESFET Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964 Text: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain	Original	NES2527B-30 NES1821B-50 NE6500278 33dBm NE650 NEL2000 NEZ5964 NE850 GaAs MESFET MESFET NEZ1011 NEZ1414	PDF
ne6500278 Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50 Text: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL	Original	NEZ4450-15D/15DL NES1821P-50 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL NEZ3642-15D/15DL NEZ7785-15D/15DL NEZ7177-8D/8DL NEZ3642-8D ne6500278 NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50	PDF
uPD3599 Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117	PDF
sc5 s dc 6v relay Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997	Original	Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.	OCR Scan	NE6500278 NE6500278 NE6500278-E3 10535E) IR30-00-3	PDF
NE6500278 Abstract: 10NEC 2410 nec Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.	OCR Scan	NE6500278 NE6500278 NE6500278-E3 10NEC 2410 nec	PDF
ne900075 Abstract: NE9000 Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27	OCR Scan	NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000	PDF