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    NE8500100

    Abstract: NE850R599
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET 850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB VDSX Drain to Source Voltage


    Original     		PDF NE850R599 NE850R599 24-Hour NE8500100

    850R599

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET 850R599 ABSOLUTE MAXIMUM RATINGS1 FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 0.5 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.5 dB V dsx Drain to Source Voltage


    OCR Scan     		PDF NE850R599 NE850R599 IS12I IS22I IS12S21I 24-Hour 850R599