NEZ1414-3E
Abstract: No abstract text available
Text: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING
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NEZ1414-3E
NEZ1414-3E
24-Hour
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AN1032
Abstract: NES2427P-140 transistor a 1837
Text: PRELIMINARY DATA SHEET 140 W S-BAND TWIN POWER GaAs MESFET NES2427P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 9.5 dB TYP HIGH EFFICIENCY: 41% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.
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NES2427P-140
NES2427P-140
24-Hour
AN1032
transistor a 1837
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NEZ3436-30E
Abstract: No abstract text available
Text: S-BAND INTERNALLY NEZ3436-30E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 • HIGH LINEAR GAIN: 10.0 dB
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NEZ3436-30E
NEZ3436-30E
24-Hour
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RF MESFET S parameters
Abstract: transistor GaAs FET s parameters NES2427P-30
Text: 30 W S-BAND TWIN NES2427P-30 POWER GaAs MESFET FEATURES • • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH DRAIN EFFICIENCY: 38% TYP HIGH LINEAR GAIN: 12 dB TYP PUSH-PULL TYPE N-CHANNEL GaAS MESFET PACKAGE OUTLINE T-86 45° R1.2 ± 0.3
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NES2427P-30
NES2427P-30
24-Hour
RF MESFET S parameters
transistor GaAs FET s parameters
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NEZ6472-15D
Abstract: NEZ6472-4D NEZ6472-4DL NEZ6472-8D NEZ6472-8DL
Text: NEZ6472-15D NEZ6472-15DL NEZ6472-8D NEZ6472-8DL NEZ6472-4D NEZ6472-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER PARAMETERS AND CONDITIONS P1dB PIdB1 ηADD Output Power at IDSQ = 0.8A, (RF Off
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NEZ6472-15D
NEZ6472-15DL
NEZ6472-8D
NEZ6472-8DL
NEZ6472-4D
NEZ6472-4DL
NEZ6472-15D/15DL
NEZ6472-8D/8DL
NEZ6472-15D
NEZ6472-4D
NEZ6472-4DL
NEZ6472-8D
NEZ6472-8DL
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x-band microwave fet
Abstract: NEZ1011-2E 17148
Text: 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-2E
NEZ1011-2E
SiO242
24-Hour
x-band microwave fet
17148
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NEZ3642-15D
Abstract: NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D NEZ3642-8DL
Text: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS
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NEZ3642-15D
NEZ3642-15DL
NEZ3642-8D
NEZ3642-8DL
NEZ3642-4D
NEZ3642-4DL
NEZ3642-15D
NEZ3642-15DL
NEZ3642-4D
NEZ3642-4DL
NEZ3642-8D
NEZ3642-8DL
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NE76038
Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated
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AN1015
NE76038)
NE76038
uPC2710
uPC2721
AN1015
UPC2710T
UPC2721GR
low noise block down converter
1 henry INDUCTOR
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
L4* Low noise
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KGL4205
Abstract: D flip flop IC
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4205 10-Gbps D-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4205
10-Gbps
KGL4205
10-GHz
24-pin
D flip flop IC
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Untitled
Abstract: No abstract text available
Text: MESFET HIGH IP3 MIXER SURFACE MOUNT MODEL: SFM-2A-1 OPTIMIZED BANDWIDTH FEATURES: ► High Performance ► High IP3 ► Small Size, Surface Mount ► RoHS Compliant ► Lead Free REL-PRO Technology SPECIFICATIONS Rev. C 09/01/06 Frequency Conversion Loss (dB)
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NE25139
Abstract: active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73
Text: California Eastern Laboratories APPLICATION NOTE AN1020 Active Mixer Design Using the NE25139 Dual Gate MESFET Active mixers have some advantages over passive double balanced mixers. The most obvious advantage is that they provide gain instead of loss. This reduces the gain requirements on the low noise amplifier and the IF stage in a receiver.
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AN1020
NE25139
NE25139
active double balanced mixer
dual gate fet
passive mixer
passive mixer downconverter
AN1020
NE25139T1U73
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ITTS501AJ
Abstract: rf05v itt501 SPDT HIGH POWER
Text: SPDT High Power T/R Switch ITTS501AJ PRELIMINARY INFORMATION FEATURES • • • MSOP-8 package Positive Control Self-Aligned MSAG -Switch MESFET Process Description Maximum Ratings T The ITT501AJ is a high power SPDT switch in a very small plastic MSOP package for
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ITTS501AJ
ITT501AJ
ITTS501AJ
rf05v
itt501
SPDT HIGH POWER
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ITT8507D
Abstract: No abstract text available
Text: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT8507D
ITT8507D
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ITT313503D
Abstract: No abstract text available
Text: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D FEATURES • • • • ADVANCED INFORMATION Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS
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ITT313503D
ITT313503D
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ITT373501D
Abstract: digital phase shifter mhz
Text: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF O ut R F In
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ITT373501D
ITT373501D
150umX150um
digital phase shifter mhz
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ITT8506D
Abstract: No abstract text available
Text: 8W Power Amplifier Die 9.5 – 10.5 GHz ITT8506D ADVANCED INFORMATION Features • • • 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8506D is a three stage MMIC power
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ITT8506D
ITT8506D
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ITTS402AH
Abstract: J12-3
Text: SP4T Switch, 3 Volt Positive Control ITTS402AH ADVANCED INFORMATION FEATURES • • • • • QSOP-28 lead package Non-Reflective Low DC Power Consumption Positive Control when “floated” with capacitors Self-Aligned MSAG MESFET Process Description
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ITTS402AH
QSOP-28
ITTS402AH
J12-3
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LTC4098-3.6
Abstract: L62622.6 l-band Phase Shifter l6262-2.6 L6262S2.6 SEH-01T-P0.6 SXA-01GW-P0.6 B180 CHP6013-SRF L6262S-2.6
Text: CHP6013-SRF L-band Phase Shifter GaAs Monolithic Microwave IC in surface mount ceramic-metal package Description Main Features The CHP6013 is a L-band monolithic 6-bit phase shifter. The circuit is manufactured with a standard 0.7µm MESFET process : via holes through the substrate, air bridges
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CHP6013-SRF
CHP6013
DSCHP60133112
LTC4098-3.6
L62622.6
l-band Phase Shifter
l6262-2.6
L6262S2.6
SEH-01T-P0.6
SXA-01GW-P0.6
B180
CHP6013-SRF
L6262S-2.6
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Low Drop Out Regulators
Abstract: 7585C DIL 16
Text: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic
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UCC2930-3\UCC3930-3
UCC2930-3\UCC3930-3
Low Drop Out Regulators
7585C
DIL 16
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Untitled
Abstract: No abstract text available
Text: UCC2930-3/-5 UCC3930-3/-5 UNITRODE PRELIMINARY Cellular Telephone Power Converter FEATURES BiCMOS Low Power RF/Cellular Power Management Negative Supply Voltage at 5mA for GaAs MESFET Amplifiers Separate Micro-Power Logic Supply Enable Low Quiescent, 3mA, Operating
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UCC2930-3/-5
UCC3930-3/-5
200mV)
UCC3930-3/-5
UDG-96036-1
0SK12DICT-ND
UCC3930-3
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ka band gaas fet Package
Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
Text: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium
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AFM04P2-000
AFM04P3-000
AFM04P3-212
AFM04P3-213
AFM06P2-000
AFM06P2-212
AFM06P2-213
AFM06P3-212
AFM06P3-213
AFM08P2-000
ka band gaas fet Package
ka band power fet
gaas fet micro-X Package
GHZ micro-X Package
power amplifier 4 ghz
power amplifier
power amplifier 5 ghz
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Micro-X marking "K"
Abstract: micro-X Package MARKING CODE C
Text: S IE M E N S CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power
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CFY27
CFY27-38
CFY27-P
CFY27-nnl:
QS9000
Micro-X marking "K"
micro-X Package MARKING CODE C
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kaba
Abstract: 149-188
Text: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface
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AFM04P2-000
61Alpha
kaba
149-188
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opto fet
Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
Text: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers
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P35-1110
0242A
opto fet
00242A
P35-1110
P35-1110-0
P35-1110-1
GaAs MESFET for opto receivers
microwave MARCONI
50ln 50sn
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