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SiTime Corporation SIT3372AC-1B9-28NE128.000000 MEMS OSC VCXO 128.0000MHZ LVPECL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3372AC-1B9-28NE128.000000				1	1 $10.92 10 $10.237 100 $9.5547 1000 $8.53099 10000 $8.53099	Buy Now
SiTime Corporation SIT3372AC-2B2-33NE128.000000 MEMS OSC VCXO 128.0000MHZ LVDS
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DigiKey	SIT3372AC-2B2-33NE128.000000				1	1 $13 10 $12.165 100 $11.3256 1000 $11.15786 10000 $11.15786	Buy Now
SiTime Corporation SIT3372AI-2E9-33NE128.000000 MEMS OSC VCXO 128.0000MHZ LVDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3372AI-2E9-33NE128.000000				1	1 $11.22 10 $10.518 100 $9.8164 1000 $8.7646 10000 $8.7646	Buy Now
SiTime Corporation SIT3372AI-2E3-25NE128.000000 MEMS OSC VCXO 128.0000MHZ LVDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3372AI-2E3-25NE128.000000				1	1 $10.2 10 $9.561 100 $8.9237 1000 $7.96761 10000 $7.96761	Buy Now
SiTime Corporation SIT3372AC-2E9-30NE128.000000 MEMS OSC VCXO 128.0000MHZ LVDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT3372AC-2E9-30NE128.000000				1	1 $10.92 10 $10.241 100 $9.5583 1000 $8.53417 10000 $8.53417	Buy Now

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NE1280 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
NE1280100	NEC	HETERO JUNCTION FIELD EFFECT TRANSISTOR	Original	PDF
NE1280100	NEC	Semiconductor Selection Guide	Original	PDF
NE1280100	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE1280200	NEC	HETERO JUNCTION FIELD EFFECT TRANSISTOR	Original	PDF
NE1280200	NEC	Semiconductor Selection Guide	Original	PDF
NE1280200	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE1280400	NEC	Semiconductor Selection Guide	Original	PDF
NE1280400	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE1280400	NEC	K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIP	Original	PDF

NE1280 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE1280100 Abstract: NE1280200 NE1280400 ca 9088 PT 14-106 Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE	Original	NE1280100 NE1280200 NE1280400 NE1280 NE1280100 NE1280200 NE1280406 24-Hour NE1280400 ca 9088 PT 14-106	PDF
PT 14-106 Abstract: No abstract text available Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE	Original	NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 24-Hour PT 14-106	PDF
kaba Abstract: NE1280100 NE1280200 NE1280400 Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE	Original	NE1280100 NE1280200 NE1280400 NE1280 NE1280100 NE1280200 24-Hour kaba NE1280400	PDF
NE9004 Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900 Text: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS	Original	NE850R5 NE9001/9002 NE9000 NE1280 NE85001 NE9004 24-Hour NE9004 NE850R5 9002 NE85001 NE9000 NE9001 ne900	PDF
Untitled Abstract: No abstract text available Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in µm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt D • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE	Original	NE1280100 NE1280200 NE1280400 NE1280 NE1280100 NE1280200 24-Hour	PDF
NE1280100 Abstract: NE1280200 NE1280400 Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS CHIP DIMENSIONS unit: µm DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom	Original	NE1280 NE1280100 NE1280100 NE1280200 NE1280400 NE12Special:	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943	PDF
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408	PDF
lg crt monitor circuit diagram Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY	PDF
MICROPROCESSOR Z80 Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro	PDF
uPC2581 Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8	Original	PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157	PDF
ne6500278 Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50 Text: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL	Original	NEZ4450-15D/15DL NES1821P-50 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL NEZ3642-15D/15DL NEZ7785-15D/15DL NEZ7177-8D/8DL NEZ3642-8D ne6500278 NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50	PDF

uPD3599 Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
sc5 s dc 6v relay Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997	Original	Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503	PDF
Untitled Abstract: No abstract text available Text: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in jam FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE	OCR Scan	NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 24-Hour	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: jum The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom	OCR Scan	NE1280 NE1280100 NE1280100 NE1280200 NE1280400	PDF
NE1280400 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in^tm FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz	OCR Scan	NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 cell0100	PDF
transistor NEC D 582 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: firn The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom	OCR Scan	NE1280 NE1280100 NE1280200 NE1280400 transistor NEC D 582	PDF
xm 85-8-0 Abstract: NE1280 PT 14-106 Text: KA-BAND MEDIUM POWER HETERO-JUNCTION FET FEATURES NE1280100 NE1280200 NE1280400 OUTLINE DIMENSIONS Units in nm NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE	OCR Scan	NE1280100 NE1280200 NE1280400 NE1280100 NE1280 NE1280400 xm 85-8-0 PT 14-106	PDF
ne900075 Abstract: NE9000 Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27	OCR Scan	NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000	PDF
NEM0899F01-30 Abstract: No abstract text available Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added	OCR Scan	NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30	PDF

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NE1280 Price and Stock

SiTime Corporation SIT3372AC-1B9-28NE128.000000

SiTime Corporation SIT3372AC-2B2-33NE128.000000

SiTime Corporation SIT3372AI-2E9-33NE128.000000

SiTime Corporation SIT3372AI-2E3-25NE128.000000

SiTime Corporation SIT3372AC-2E9-30NE128.000000

NE1280 Datasheets (9)

NE1280 Datasheets Context Search

NE1280100

PT 14-106

kaba

NE9004

Untitled

NE1280100

micro servo 9g

2SK2396

uPD16305

nf025

lg crt monitor circuit diagram

MICROPROCESSOR Z80

uPC2581

ne6500278

uPD3599

UAA 1006

sc5 s dc 6v relay

Untitled

Untitled

NE1280400

transistor NEC D 582

xm 85-8-0

ne900075

NEM0899F01-30