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    4069 NOT GATE IC

    Abstract: NEC LDMOS
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS

    GL 7812

    Abstract: ATC 2603 LDMOS NEC
    Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:


    Original     		PDF NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		PDF NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    J50 mosfet

    Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec

    LMxxx

    Abstract: conditioning and TEXAS and 1996 TLV2231 ne55x airbag TLV22XX
    Text: Signal Conditioning Section 1 SIGNAL CONDITIONING 1-1 1 Signal Conditioning NOTICE This presentation is a single chapter from the 1996 Mixed Signal Products Seminar. This presentation includes notes which can be read in the notes page view. MSP Seminar Texas Instruments


    Original     		PDF OT-23 TLV1391 LMxxx conditioning and TEXAS and 1996 TLV2231 ne55x airbag TLV22XX

    Accelerometers

    Abstract: TLV24xx TLE2161 TLV2772 ne55x TLE2082 "operational amplifier selection guide" TLE2227 Texas Instruments CMOS TLE2682
    Text:                        Amplifiers 1-1                         Signal Conditioning – Amplifiers 1-1 Operational Amplifier                        1-2 Signal Conditioning - Amplifiers


    Original     		PDF

    4069 NOT GATE IC

    Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		PDF NE5520379A NE5520379A NE5520379A-EVAL 4069 NOT GATE IC GSM900 MCH185A180JK MCH185A4R7CK NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec

    NEC 718

    Abstract: LDMOS NEC
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE5520379A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 15 dB TYP @ 900 MHz


    Original     		PDF NE5520379A 24-Hour NEC 718 LDMOS NEC

    GL 7812

    Abstract: ta 8264 NE55xx 7564 ROHM 7818 voltage ATC 2603 LDMOS NEC NEC 7812
    Text: PRELIMINARY DATA SHEET 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +24.5 dBm TYP at VDS = 3 V 1.5 ± 0.2 4.2 Max


    Original     		PDF NE552R479A GL 7812 ta 8264 NE55xx 7564 ROHM 7818 voltage ATC 2603 LDMOS NEC NEC 7812

    MC340 transistor

    Abstract: LM39xx LM29XX TDA1035 MC34262 flyback led design MC330 transistor NCP1337 NCP1377 MC34063a driver led MC33166/7
    Text: Power Management The Power Management Chain — From the Socket to the Pocket , and everything in between. AC-DC Offline Switching Controllers/Regulators DC-DC Converters Power Factor Correction Controllers Isolated Topologies NCP1651 Flyback/Forward MC33023, MC34023, CS51221, CS51021A/2A, CS5124


    Original     		PDF NCP1651 MC33023, MC34023, CS51221, CS51021A/2A, CS5124 NCP1650 NCP1030/1 NCP1653 MC33025, MC340 transistor LM39xx LM29XX TDA1035 MC34262 flyback led design MC330 transistor NCP1337 NCP1377 MC34063a driver led MC33166/7

    LDMOS NEC

    Abstract: No abstract text available
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ������������� ����


    Original     		PDF NE5520379A GSM900 HS350-P3 WS260 VP215 IR260 LDMOS NEC

    2052-5636-02 100pf

    Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION


    Original     		PDF NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS