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    NDS9407 Price and Stock

    onsemi NDS9407

    MOSFET P-CH 60V 3A 8SOIC
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    DigiKey NDS9407 Digi-Reel 7,432 1
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    NDS9407 Cut Tape 7,432 1
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    NDS9407 Reel 5,000 2,500
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    Avnet Americas NDS9407 Reel 42,500 22 Weeks 2,500
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    NDS9407 Reel 4 Weeks 1,296
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    Mouser Electronics NDS9407 3,531
    • 1 $0.73
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    Newark NDS9407 Reel 2,500
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    NDS9407 Cut Tape 2,500
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    Future Electronics NDS9407 Reel 9 Weeks 5,000
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    NDS9407 Reel 22 Weeks 5,000
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    Onlinecomponents.com NDS9407
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    Rochester Electronics NDS9407 32,300 1
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    Richardson RFPD NDS9407 5,000
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    Avnet Asia NDS9407 22 Weeks 5,000
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    Avnet Silica NDS9407 23 Weeks 2,500
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    Chip1Stop NDS9407 22,500
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    EBV Elektronik NDS9407 18 Weeks 2,500
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    Wuhan P&S NDS9407 5,000 1
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    onsemi NDS9407_G

    MOSFET P-CH 60V 3A 8SOIC
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    Fairchild Semiconductor Corporation NDS9407

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    Bristol Electronics NDS9407 13
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    Win Source Electronics NDS9407 200,000
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    Others NDS9407

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    Chip 1 Exchange NDS9407 39,000
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    VBsemi Electronics Co Ltd NDS9407-NL

    4000
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    Maritex NDS9407-NL 100
    • 1 $1.175
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    NDS9407 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS9407 Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9407 Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9407 Fairchild Semiconductor 60V P-Channel PowerTrench MOSFET Original PDF
    NDS9407 National Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9407 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9407 Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9407 National Semiconductor Power MOSFETS SOIC-8 Dual/Single DMOS Scan PDF
    NDS9407_NL Fairchild Semiconductor Single P-Channel PowerTrench MOSFET Original PDF

    NDS9407 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS9407

    Abstract: No abstract text available
    Text: NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF NDS9407 NDS9407

    Untitled

    Abstract: No abstract text available
    Text: June 1999 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9407

    NDS9407

    Abstract: No abstract text available
    Text: June 1999 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9407 NDS9407

    NDS9407

    Abstract: No abstract text available
    Text: N February 1996 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9407 NDS9407

    Untitled

    Abstract: No abstract text available
    Text: NDS9407 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF NDS9407

    F011

    Abstract: F63TNR F852 L86Z NDS9407
    Text: June 1999 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9407 F011 F63TNR F852 L86Z NDS9407

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		PDF ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055

    ISL9504

    Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		PDF ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42

    sil1162

    Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
    Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM


    Original     		PDF MPC7450 200PIN RPAK10P2C 1000BT SN74AUC1G04 sil1162 Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic

    PP3V42G3H

    Abstract: temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700
    Text: 8 6 7 REV .csa Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF ITP700FLEX PP3V42G3H temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700

    ar9350

    Abstract: Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06


    Original     		PDF ITP700FLEX ar9350 Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    MAX1669EVKIT

    Abstract: P1 TRANSISTOR serial Parallel-Printer Interface IC mmbt3904 motorola 2N3906 Central fdn359an fdn359an circuit 2N3906 CMPT3906 EMK107BJ104KA
    Text: 19-1887; Rev 0; 12/00 MAX1669 Evaluation System The MAX1669 EV kit is an assembled and tested PC board that demonstrates the MAX1669 fan controller and temperature sensor. The MAX1669, in conjunction with external power components, controls the speed of a DC


    Original     		PDF MAX1669 MAX1669, 2N3906 MAX1669EVKIT P1 TRANSISTOR serial Parallel-Printer Interface IC mmbt3904 motorola 2N3906 Central fdn359an fdn359an circuit 2N3906 CMPT3906 EMK107BJ104KA

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLUU324A – July 2008 – Revised October 2013 bq77PL900EVM-001 This evaluation module EVM is a complete evaluation system for the bq77PL900, a five- to ten-cell Li-ion battery protection and AFE integrated circuit. The EVM includes one bq77PL900 circuit module and


    Original     		PDF SLUU324A bq77PL900EVM-001 bq77PL900 EV2300

    NDS9407

    Abstract: No abstract text available
    Text: June 1999 FAIRCHILD M IC G N D U C T D R NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor G e n e r a l D e s c r ip tio n F e a tu r e s These P -C h a n n e l e n h a n c e m e n t m o d e p o w e r fie ld e ffe c t tra n s is to rs are p ro d u c e d usin g F a irc h ild 's p ro p rie ta ry , h ig h cell


    OCR Scan     		PDF NDS9407 NDS9407

    Untitled

    Abstract: No abstract text available
    Text: as I m m I •■ ■ J une 1999 F A IR C H IL D M ICQNDUCTOH tm NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-C hannel Features enhancem ent mode pow er field effect ■ transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS9407

    NDS9407

    Abstract: diode se-1.5
    Text: National Semiconductor" May 1996 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9407 L5D1130 NDS9407 diode se-1.5

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1996 tm NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P -C h a n n e l enhancem ent m ode po w er field effect • transistors a re produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS9407

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


    OCR Scan     		PDF S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P

    NDS9435

    Abstract: NDS9945 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948 NDS9955
    Text: D M fte c E T c / *• T> m bäE Power M OSFETS continued bSQ113G 003^4^3 OOT « N S C 5 SOIC-8 Dual/Single DMOS soice 81 NChannel NATL SEfllCOND rOS(on) (Volts) Min Device VGS= 10V Ves = 4.5V (DISCRETE) 1 •o Po (A) Max (Watts) Max Configuration Pin Out


    OCR Scan     		PDF bSQ113Q NDS9410* NDS9945 NDS9955 NDS9956 NDS9400* NDS9405* NDS9407* NDS9430* NDS9435* NDS9435 NDS9410 NDS9430 NDS9400 NDS9405 NDS9407 NDS9947 NDS9948