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    2N7002DW Price and Stock

    Diodes Incorporated 2N7002DW-7-F

    MOSFET 2N-CH 60V 0.23A SOT363
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    onsemi 2N7002DW

    MOSFET 2N-CH 60V 0.115A SC88
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    DigiKey 2N7002DW Cut Tape 58,292 1
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    2N7002DW Digi-Reel 58,292 1
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    2N7002DW Reel 57,000 3,000
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    New Advantage Corporation 2N7002DW 129,000 1
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    Infineon Technologies AG 2N7002DWH6327XTSA1

    MOSFET 2N-CH 60V 0.3A SOT363
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    DigiKey 2N7002DWH6327XTSA1 Digi-Reel 21,669 1
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    Diodes Incorporated 2N7002DWQ-13-F

    MOSFET 2N-CH 60V 0.23A SOT363
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    onsemi 2N7002DW-G

    MOSFET 2N-CH 60V 0.115A SC88
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    2N7002DW Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002DW Diodes Short Form Selection Guide Original PDF
    2N7002DW Diodes DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    2N7002DW Diodes DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    2N7002DW Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor; Package: SC70-6; No of Pins: 6; Container: Tape & Reel Original PDF
    2N7002DW Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT363-6; Package: SOT-363 dual; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3,000.0 mOhm; RDS (on) (max) (@4.5V): 4,000.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    2N7002DW PanJit Semiconductors 60V N-Channel Enhancement Mode MOSFET Original PDF
    2N7002DW PanJit Semiconductors 60V N-Channel Enhancement Mode MOSFET Original PDF
    2N7002DW PanJit Semiconductors DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS Original PDF
    2N7002DW PanJit Semiconductors 60V N-Channel Enhancement Mode MOSFET Original PDF
    2N7002DW Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2N7002DW Weitron Dual N-Channel MOSFET Original PDF
    2N7002DW-7 Diodes TRANS MOSFET N-CH 60V 0.115A 6SOT-363 T/R Original PDF
    2N7002DW-7 Diodes Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002DW-7 Diodes FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 230MA SOT-363 Original PDF
    2N7002DW-7-F Diodes TRANS MOSFET N-CH 60V 0.115A 6SOT-363 T/R Original PDF
    2N7002DW-7-F Diodes Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002DW-7-F Diodes FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 230MA SOT-363 Original PDF
    2N7002DWA Diodes DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    2N7002DWA-7 Diodes FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 180MA SOT363 Original PDF
    2N7002DWH6327 Infineon Technologies FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 0.3A SOT363 Original PDF

    2N7002DW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2


    Original
    2N7002DW MIL-STD-883 JESD22-B102-D JESD22-A102-C 168hours MIL-STD-750D METHOD-1051 JESD22-A104-B 10min PDF

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


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    1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89 PDF

    MARKING GA SOT-363

    Abstract: 22PF 2N7002DW
    Text: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic


    Original
    2N7002DW OT-363 SC-88) OT-363, MIL-STD-202, 500mA MARKING GA SOT-363 22PF 2N7002DW PDF

    k72 transistor

    Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


    Original
    OT-363 2N7002DW width300 k72 transistor transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td PDF

    marking K72

    Abstract: 2N7002DW
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002DW Features • • • • • • Power Dissipation: 0.2W Tamb=25℃ Drain Current: 115mA Drain-source Voltage: 60V


    Original
    2N7002DW 115mA 20Vdc) 60Vdc, 10Vdc) 50mAdc) 10Vdc, 500mAdc) marking K72 2N7002DW PDF

    DS30120 Rev. 13

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original
    2N7002DW AEC-Q101 OT363 J-STD-020 MIL-STD-202, DS30120 DS30120 Rev. 13 PDF

    100KR2J-1-GP

    Abstract: 2N7002DW-7-F 2N7002DW-7F-GP SFH3500-5/100KR2J-1-GP 330R2J-3-GP wistron board
    Text: 5 4 3 2 5V_S0 2 TO M/B CONNECT R4 100KR2J-1-GP T/P BOARD1 07509 REVISION : 07201-1 FOR CAP NUM ODD SATA LED WLAN LED AND TP MODULE 5V_S0 3D3V_S0 FOR TPCONN1 26 FINGER PRONT 1 1 NUM_LED_1 D 6 1 5 2 4 U4 2N7002DW-7F-GP 5V_S0 R11 2 NUM_LED# 5V_S5 FOR BATFULL,STDBY


    Original
    100KR2J-1-GP 2N7002DW-7F-GP 560R2F-GP LED-B-65-GP ACES-CON25-2-GP LED-B-67-GP-U2 100KR2J-1-GP 2N7002DW-7-F 2N7002DW-7F-GP SFH3500-5/100KR2J-1-GP 330R2J-3-GP wistron board PDF

    2N7002DW-7F-GP

    Abstract: 100KR2J-1-GP LED21 wistron board Wistron Corporation BR141 godzilla
    Text: 5 4 3 2 2 1 AUDIO_LED_1 6 1 1 6 5 2 2 5 3 3 4 U1 2N7002DW-7F-GP 5V_S0 R5 INSTEAD_LED_1 4 U8 2N7002DW-7F-GP LED4 1AUDIO_LED#_3 2 AUDIO_LED#_2 K INSTEAD_LED#_2 K LED-B-65-GP INSTEAD_LED#_3 A 2 LED-B-65-GP D 5V_S0 R16 LED8 A 560R2F-GP H:07511-1 REVISION : 07201-1


    Original
    100KR2J-1-GP 2N7002DW-7F-GP 560R2F-GP LED-B-65-GP LED-B-65-GP 2N7002DW-7F-GP 100KR2J-1-GP LED21 wistron board Wistron Corporation BR141 godzilla PDF

    K72 TO

    Abstract: transistor k72 k72 transistor 2N7002DW ID200
    Text: Transys Electronics L I M I T E D SOT-363 Plastic-Encapsulated Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


    Original
    OT-363 2N7002DW width300 K72 TO transistor k72 k72 transistor 2N7002DW ID200 PDF

    k72 transistor

    Abstract: transistor k72 mosfet k72 transistor marking k72 k72 sot 23 k72 transistor surface mount k72 diode k72 transistor sot 23 k72 marking code 2N7002DW
    Text: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed S2


    Original
    2N7002DW OT-363 J-STD-020C DS30120 500mA k72 transistor transistor k72 mosfet k72 transistor marking k72 k72 sot 23 k72 transistor surface mount k72 diode k72 transistor sot 23 k72 marking code 2N7002DW PDF

    LTA 702 N

    Abstract: LTA 702 42008 2N7002DW ZE marking sot-363 marking 702
    Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original
    2N7002DW 500mA 2002/95/EC OT-363 MIL-STD-750 LTA 702 N LTA 702 42008 2N7002DW ZE marking sot-363 marking 702 PDF

    K72 sot

    Abstract: k72 SOT-363
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002DW Features x • • • • • • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1


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    2N7002DW 115mA OT-363 K72 sot k72 SOT-363 PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2


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    2N7002DW MIL-STD-883 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 PDF

    k72 diode

    Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


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    2N7002DW AEC-Q101 DS30120 k72 diode mosfet k72 K72 marking diode DS30120 Rev. 14 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002DW Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


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    2N7002DW 115mA OT-363 f20Vdccustomers PDF

    DIODE MARKING 534

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002DW has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to


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    2N7002DW 2N7002DW 400mA QW-R502-534 DIODE MARKING 534 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-363 2N7002DW OT-363 500mA 115mA, 200mA 500mA PDF

    sot-363 n-channel mosfet

    Abstract: 2N7002DW Small Signal MOSFET
    Text: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol


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    2N7002DW 60VOLTS, OT-363 026TYP 65TYP) 021REF 01-Jan-2006 500mA sot-363 n-channel mosfet 2N7002DW Small Signal MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


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    2N7002DW 500mA OT-363 MIL-STD-750 006grams PDF

    k72 transistor

    Abstract: K72 TO mosfet k72 k72 mosfet code k72 k72 marking k72 transistor surface mount K72 n marking K72
    Text: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance • • • • • • • G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed


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    2N7002DW AEC-Q101 OT-363 OT-363 DS30120 k72 transistor K72 TO mosfet k72 k72 mosfet code k72 k72 marking k72 transistor surface mount K72 n marking K72 PDF

    sot-363 702

    Abstract: MARKING CODE 702 2N7002DW SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is


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    2N7002DW OT-363 SC70-6L) OT-363 2N7002DW T/R13 sot-363 702 MARKING CODE 702 SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7 PDF

    2N7002DW SOT363

    Abstract: 2N7002DW JESD22-A114 L6327
    Text: 2N7002DW OptiMOS Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level • Avalanche rated 60 V V GS=10 V 3 Ω V GS=4.5 V 4 ID 0.3 A • Fast switching • Qualified according to AEC Q101


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    2N7002DW PG-SOT363 PG-SOT363 L6327: 2N7002DW SOT363 2N7002DW JESD22-A114 L6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2N7002DW Power MOSFET 3 0 0 m A, 6 0 V DU AL N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 2N7002DW uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


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    2N7002DW 2N7002DW 2N7002DWL-AL6-R 2N7002DWG-AL6-R OT-363 QW-R502-534 PDF

    LTA 702 N

    Abstract: MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363
    Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET SOT-363 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=5Ω 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • High Density Cell Design For Ultra Low On-Resistance


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    2N7002DW 500mA OT-363 OT-363 MIL-STD-750 006grams Chara63 LTA 702 N MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363 PDF