TN2905A
Abstract: PN2907A
Text: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from
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TN2905A
PN2907A
L5D1130
004DbES
TN2905A
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ic 5218 a
Abstract: LPKL D44H8 NZT44H8 4A04I SOED100 5219 5V REGULATOR
Text: D44H8 I NZT44H8 & Discrete PO W ER & S ig n a l Technologies National S e m i c o n d it c I o r ” D44H8 NZT44H8 NPN Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed Is important. Sourced from Process 4Q .
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D44H8
NZT44H8
O-220
L5D1130
ic 5218 a
LPKL
NZT44H8
4A04I
SOED100
5219 5V REGULATOR
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NDB6050
Abstract: NDP6050 js35
Text: Na t i o n a l March 1996 Semiconductor" N DP6050/ NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP6050/
NDB6050
L5D113D
bSD113D
NDP6050
js35
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797L
Abstract: NDS9952A 0040027
Text: May 1996 N ational f i Semiconductor" NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using National’s proprietary, high cell density, DMOS
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NDS9952A
bSD1130
b501130
00400Eci
797L
NDS9952A
0040027
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DIODE T50
Abstract: MMBD7000 mmbd1201 MA670
Text: MMBD7000 & Discrete POW ER & Signal Technologies National Semiconductor’ MMBD7000 High Conductance Ultra Fast Diode Sourced from P roce ss 1P. Se e MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol ta^scum essotnemisenoted Parameter Units
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MMBD7000
MMBD1201-1205
L5D1130
004G5A1
0040Sfl2
DIODE T50
MMBD7000
mmbd1201
MA670
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NDS8928
Abstract: ab-5 national
Text: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS
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NDS8928
b5D113D
bSD113D
NDS8928
ab-5 national
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