PN222A
Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Text: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30
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bS01130
0D37773
PN3566
PN3641
PN3643
PN4141
PN4142
PN5449
TN2219
O-237
PN222A
2N2222A TO-92
BSR14
2N3904 TO-92 type
PN544
2NS904
MPS6574
NPN transistor 2N2222A in T0-92 package
Transistor 2N2222A
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nsdu10
Abstract: nse458 NSD134
Text: NATL SEMICOND DISCRETE 52E D • bSQ113Q 0D377flb 3 ■ 7 ~ 2 ~7~ £ / NPN Medium Power Transistors by Ascending Vceo (Continued) Part No. VCeo (V) Min Hfe @ lc/Vce Max (mA/V) Vce (sat) (V) Max •c/lb (mA)/(mA) 10/20 1,0 20 TO-92 Package PN7055 220 40 D40P5
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bSQ113Q
0D377flb
PN7055
D40P5
2N3440
2N6593
2N6712
2N6722
2N6734
92PE488
nsdu10
nse458
NSD134
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MMBF4119
Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
Text: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for
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PN4117
PN4118
PN4119
MMBF4117
MMBF4118
MMBF4119
OT-23
G1A/61C/61E
S01130
MMBF4119
PN4119
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PN4258
Abstract: process 65
Text: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*
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PN4258
MMBT4258
PN4258
D040b
process 65
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BSS84
Abstract: ROB SOT23 BSS110
Text: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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BSS84
BSS110
BSS84:
BSS110:
b501130
0Q401fl3
ROB SOT23
BSS110
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NDS9943
Abstract: 56 pF CH N-8C
Text: N a t ion a I Semiconductor" M ay 1996 NDS9943 Dual N & P-Channei Enhancement Mode Field Effect Transistor General Description Features These du a l N- and P-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using N a tio n a l's p ro p rie ta ry, high cell density, DMOS
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NDS9943
bSD113G
0D400Q2
NDS9943
56 pF CH
N-8C
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"NPN Transistors" 2n3567
Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40
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2N699
2N1613
2N1711
2N1890
to-202
tn3742
to-237
"NPN Transistors" 2n3567
NSE459
NSDU05
NSD458
2N6718 TO-237
2N3569
2N6593
2N5336
2N3567
MPSW06
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