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    PN222A

    Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
    Text: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30


    OCR Scan     		PDF bS01130 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 O-237 PN222A 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A

    nsdu10

    Abstract: nse458 NSD134
    Text: NATL SEMICOND DISCRETE 52E D • bSQ113Q 0D377flb 3 ■ 7 ~ 2 ~7~ £ / NPN Medium Power Transistors by Ascending Vceo (Continued) Part No. VCeo (V) Min Hfe @ lc/Vce Max (mA/V) Vce (sat) (V) Max •c/lb (mA)/(mA) 10/20 1,0 20 TO-92 Package PN7055 220 40 D40P5


    OCR Scan     		PDF bSQ113Q 0D377flb PN7055 D40P5 2N3440 2N6593 2N6712 2N6722 2N6734 92PE488 nsdu10 nse458 NSD134

    MMBF4119

    Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
    Text: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for


    OCR Scan     		PDF PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 OT-23 G1A/61C/61E S01130 MMBF4119 PN4119

    PN4258

    Abstract: process 65
    Text: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*


    OCR Scan     		PDF PN4258 MMBT4258 PN4258 D040b process 65

    BSS84

    Abstract: ROB SOT23 BSS110
    Text: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF BSS84 BSS110 BSS84: BSS110: b501130 0Q401fl3 ROB SOT23 BSS110

    NDS9943

    Abstract: 56 pF CH N-8C
    Text: N a t ion a I Semiconductor" M ay 1996 NDS9943 Dual N & P-Channei Enhancement Mode Field Effect Transistor General Description Features These du a l N- and P-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using N a tio n a l's p ro p rie ta ry, high cell density, DMOS


    OCR Scan     		PDF NDS9943 bSD113G 0D400Q2 NDS9943 56 pF CH N-8C

    "NPN Transistors" 2n3567

    Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
    Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40


    OCR Scan     		PDF 2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06