76145s
Abstract: 76145p logic gate TA7614 HUF76145S3ST TB334 AN9321 HUF76145P3 HUF76145S3 HUF76145S3S
Text: HUF76145P3, HUF76145S3, HUF76145S3S Data Sheet December 2003 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
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HUF76145P3,
HUF76145S3,
HUF76145S3S
76145s
76145p
logic gate
TA7614
HUF76145S3ST
TB334
AN9321
HUF76145P3
HUF76145S3
HUF76145S3S
|
PDF
|
76129S
Abstract: 76129P HUF76129P3 HUF76129S3S HUF76129S3ST TB334
Text: HUF76129P3, HUF76129S3S Semiconductor Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. 6129P3 This advanced process technology
|
Original
|
HUF76129P3,
HUF76129S3S
6129P3
HUF76
129S3S
00e-4
90e-2
80e-1
76129S
76129P
HUF76129P3
HUF76129S3S
HUF76129S3ST
TB334
|
PDF
|
76121P
Abstract: 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5
Text: HUF76121P3, HUF76121S3S Semiconductor Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs [ /Title are manufactured using the HUF76 innovative UltraFET process. 121P3, This advanced process technology
|
Original
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HUF76121P3,
HUF76121S3S
HUF76
121P3,
HUF76
121S3S
low30V,
HUF76121
76121P
121P3
HUF76121P3
HUF76121S3S
HUF76121S3ST
TB334
76121S
25E5
|
PDF
|
76143S
Abstract: 76143P HUF76143P3 HUF76143S3S HUF76143S3ST TB334 6143P3
Text: HUF76143P3, HUF76143S3S Semiconductor Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF7 are manufactured using the innovative UltraFET process. 6143P3 This advanced process technology
|
Original
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HUF76143P3,
HUF76143S3S
6143P3
HUF76
143S3S
HUF76143
76143S
76143P
HUF76143P3
HUF76143S3S
HUF76143S3ST
TB334
6143P3
|
PDF
|
75329p
Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
|
HUF75329G3,
HUF75329P3,
HUF75329S3S
75329p
75329G
HUF75329P3
HUF75329S3ST
TB334
75329S
HUF75329G3
HUF75329S3S
75329
|
PDF
|
76129D
Abstract: 129D3 motor drive HUF76129D3 HUF76129D3S TB334
Text: HUF76129D3, HUF76129D3S Semiconductor Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. 129D3, This advanced process technology
|
Original
|
HUF76129D3,
HUF76129D3S
HUF76
129D3,
HUF761
29D3S)
90e-2
80e-1
00e-1
76129D
129D3 motor drive
HUF76129D3
HUF76129D3S
TB334
|
PDF
|
76139S
Abstract: 76139P HUF76139P3 HUF76139S3S HUF76139S3ST TB334
Text: HUF76139P3, HUF76139S3S Semiconductor Data Sheet 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. 139P3, This advanced process technology
|
Original
|
HUF76139P3,
HUF76139S3S
HUF76
139P3,
139S3S
low30V,
65e-3,
25e-3,
75e-2,
76139S
76139P
HUF76139P3
HUF76139S3S
HUF76139S3ST
TB334
|
PDF
|
76132P
Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
Text: HUF76132P3, HUF76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology
|
Original
|
HUF76132P3,
HUF76132S3S
HUF76
132P3,
132S3S
low30V,
51e-2
03e-2
05e-2
76132P
HUF76132P3
HUF76132S3S
HUF76132S3ST
TB334
|
PDF
|
75639p
Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
|
HUFA75639G3,
HUFA75639P3,
HUFA75639S3S
75639p
75639s
75639G
75639
HUFA75639G3
HUFA75639P3
HUFA75639S3S
HUFA75639S3ST
TB334
|
PDF
|
76145S
Abstract: 76145P HUF76145P3 HUF76145S3S HUF76145S3ST TB334
Text: HUF76145P3, HUF76145S3S Semiconductor Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the 145P3, innovative UltraFET process. HUF76 This advanced process technology
|
Original
|
HUF76145P3,
HUF76145S3S
HUF76
145P3,
145S3S
06e-3
71e-3
07e-2
12e-2
76145S
76145P
HUF76145P3
HUF76145S3S
HUF76145S3ST
TB334
|
PDF
|
AN7254
Abstract: AN7260 AN9321 AN9322 HUF75321D3ST TA75321 TB334
Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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Original
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HUF75321D3ST
AN7254
AN7260
AN9321
AN9322
HUF75321D3ST
TA75321
TB334
|
PDF
|
75639P
Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334
Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
|
Original
|
HUF75639G3,
HUF75639P3,
HUF75639S3S
O-263AB
330mm
100mm
EIA-481
75639P
HUF75639P3
75639G
75639S
HUF75639G3
HUF75639S3S
HUF75639S3ST
TB334
|
PDF
|
AN9321
Abstract: AN9322 HUFA75639S3R4851 TB334 TC217
Text: HUFA75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
|
Original
|
HUFA75639S3R4851
115opment.
AN9321
AN9322
HUFA75639S3R4851
TB334
TC217
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
HUF75321D3ST
|
PDF
|
|
|
HUF76107P3
Abstract: AN7254 AN7260 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet January 2003 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
|
HUF76107P3
HUF76107P3
AN7254
AN7260
AN9321
AN9322
TB334
TC298
|
PDF
|
HUFA75329D3ST
Abstract: TB334 75329D AN9321 AN9322 HUFA75329D3 HUFA75329D3S relay 6v 200 ohm
Text: HUFA75329D3, HUFA75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
HUFA75329D3,
HUFA75329D3S
HUFA75329D3ST
TB334
75329D
AN9321
AN9322
HUFA75329D3
HUFA75329D3S
relay 6v 200 ohm
|
PDF
|
HUFA75321D3S
Abstract: HUFA75321D3ST TA75321 TB334 75321D HUFA75321D3
Text: HUFA75321D3, HUFA75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
HUFA75321D3,
HUFA75321D3S
HUFA75321D3S
HUFA75321D3ST
TA75321
TB334
75321D
HUFA75321D3
|
PDF
|
75329D
Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
HUF75329D3,
HUF75329D3S
75329D
AN9321
HUF75329D3
HUF75329D3S
HUF75329D3ST
TB334
|
PDF
|
75321p
Abstract: HUFA75321P3 HUFA75321S3S HUFA75321S3ST TA75321 TB334 98-CA
Text: HUFA75321P3, HUFA75321S3S Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
HUFA75321P3,
HUFA75321S3S
75321p
HUFA75321P3
HUFA75321S3S
HUFA75321S3ST
TA75321
TB334
98-CA
|
PDF
|
AN7254
Abstract: AN9321 AN9322 HUF75639S3R4851 TB334
Text: HUF75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
|
Original
|
HUF75639S3R4851
115Vopment.
AN7254
AN9321
AN9322
HUF75639S3R4851
TB334
|
PDF
|
HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
|
HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
|
PDF
|
76143S
Abstract: 76143P Harris 76143p
Text: HUF76143P3, HUF76143S3, HUF76143S3S Semiconductor November 1998 Data Sheet 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
OCR Scan
|
HUF76143P3,
HUF76143S3,
HUF76143S3S
O-263AB
HUF76143S3S
O-263AB
76143S
76143P
Harris 76143p
|
PDF
|
76143P
Abstract: 76143S Li ION spice model charge TA76143
Text: HUF76143P3, HUF76143S3, HUF76143S3S Semiconductor November 1998 Data Sheet 75A, 30 V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
OCR Scan
|
HUF76143P3,
HUF76143S3,
HUF76143S3S
O-263AB
330mm
100mm
EIA-481
76143P
76143S
Li ION spice model charge
TA76143
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HUF76409D3, HUF76409D3S Semiconductor December 1998 Advance Information 60V, 0.088 Ohm, 17A, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innova tive UltraFET process. This advanced process technology
|
OCR Scan
|
HUF76409D3,
HUF76409D3S
10OA/ns
|
PDF
|
