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    HUF76129S3ST Price and Stock

    Fairchild Semiconductor Corporation HUF76129S3ST

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,56A I(D),TO-263AB
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    Quest Components HUF76129S3ST 757
    • 1 $0.6789
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    • 1000 $0.2829
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    Rochester Electronics HUF76129S3ST 641 1
    • 1 $0.3381
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    • 100 $0.3178
    • 1000 $0.2874
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    Harris Semiconductor HUF76129S3ST

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,56A I(D),TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF76129S3ST 19
    • 1 $0.6789
    • 10 $0.5658
    • 100 $0.5658
    • 1000 $0.5658
    • 10000 $0.5658
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    HUF76129S3ST Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76129S3ST Fairchild Semiconductor 56 A, 30 V, 0.016 ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76129S3STK Fairchild Semiconductor 56A, 30V, 0.016 Ohm N-Channel, Logic Level UltraFET Power MOSFETs Original PDF

    HUF76129S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76129s

    Abstract: 76129P HUF76129P3 AN9321 AN9322 HUF76129S3S HUF76129S3ST TB334
    Text: HUF76129P3, HUF76129S3S Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76129P3, HUF76129S3S 1999ducts 76129s 76129P HUF76129P3 AN9321 AN9322 HUF76129S3S HUF76129S3ST TB334

    76129s

    Abstract: 76129p 76129 HUF76129P3 AN9321 AN9322 HUF76129S3S HUF76129S3ST TB334 KP-57
    Text: HUF76129P3, HUF76129S3S Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76129P3, HUF76129S3S 76129s 76129p 76129 HUF76129P3 AN9321 AN9322 HUF76129S3S HUF76129S3ST TB334 KP-57

    76129s

    Abstract: 76129p 76129 AN9321 AN9322 HUF76129P3 HUF76129S3S HUF76129S3ST TB334 ta761
    Text: HUF76129P3, HUF76129S3S Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76129P3, HUF76129S3S 1999eserves 76129s 76129p 76129 AN9321 AN9322 HUF76129P3 HUF76129S3S HUF76129S3ST TB334 ta761

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    76129s

    Abstract: 76129P
    Text: HUF76129P3, HUF76129S3S Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76129P3, HUF76129S3S TB334, HUF76129S3ST HUF76129S3S HUF76129S3STK O-263 76129s 76129P

    76129s

    Abstract: 56E-3
    Text: HUF76129P3, HUF76129S3S Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76129P3, HUF76129S3S 76129s 56E-3

    76129S

    Abstract: 76129P HUF76129P3 HUF76129S3S HUF76129S3ST TB334
    Text: HUF76129P3, HUF76129S3S Semiconductor Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. 6129P3 This advanced process technology


    Original     		PDF HUF76129P3, HUF76129S3S 6129P3 HUF76 129S3S 00e-4 90e-2 80e-1 76129S 76129P HUF76129P3 HUF76129S3S HUF76129S3ST TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: HUF76129P3, HUF76129S3S Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76129P3, HUF76129S3S

    76129s

    Abstract: 76129 HUF76129P3 76129p diode 98e AN9321 AN9322 HUF76129S3S HUF76129S3ST TB334
    Text: HUF76129P3, HUF76129S3S Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76129P3, HUF76129S3S 76129s 76129 HUF76129P3 76129p diode 98e AN9321 AN9322 HUF76129S3S HUF76129S3ST TB334

    76129s

    Abstract: 76129p 76129
    Text: ASSESS? HUF76129P3, HUF76129S3, HUF76129S3S 61 A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFET May 1998 Description Features Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the


    OCR Scan     		PDF HUF76129P3, HUF76129S3, HUF76129S3S O-263AB HUF76129S3S O-263AB 76129s 76129p 76129

    76129s

    Abstract: 76129p TA76129
    Text: HUF76129P3, HUF76129S3S in t e f s il D a ta S h e e t 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76129P3, HUF76129S3S HUF76129S3S 76129s 76129p TA76129

    76129s

    Abstract: 76129p
    Text: HUF76129P3, HUF76129S3S S em iconductor January 1999 Data Sheet 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs $ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76129P3, HUF76129S3S 00e-4 90e-2 80e-1 00e-1 HUF76129 10e-5 76129s 76129p