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    Rochester Electronics LLC HUF76121S3ST

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121S3ST Bulk 4,000 606
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    Rochester Electronics LLC HUF76121S3

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121S3 Bulk 3,600 634
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    Rochester Electronics LLC HUF76121S3S

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76121S3S Bulk 1,200 430
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    GLF Integrated Power GLF76121S

    2A NANO CURRENT CONSUMED POWER R
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    DigiKey GLF76121S Reel 10
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    TE Connectivity DS07-61-21S-1-059

    PLUG ASSY
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    DigiKey DS07-61-21S-1-059 Bag 10
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    Avnet Americas DS07-61-21S-1-059 Bulk 17 Weeks, 6 Days 10
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    Newark DS07-61-21S-1-059 Bulk 7 1
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    Interstate Connecting Components DS07-61-21S-1-059
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    Master Electronics DS07-61-21S-1-059
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    76121S Datasheets Context Search

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    76121S

    Abstract: 76121P TA761
    Text: HUF76121P3, 76121S3, 76121S3S Semiconductor Data Sheet 49A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF76121P3, HUF76121S3, HUF76121S3S O-263AB HUF76121S3S O-263AB 76121S 76121P TA761 PDF

    Untitled

    Abstract: No abstract text available
    Text: 76121SK8 Semiconductor April 1999 Data Sheet File Number Features 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level G a te Drive This N -C h a n n e l pow er M O S F E T is • 8A , 3 0 V m anufactured using the innovative


    OCR Scan     		HUF76121SK8 MS-012AA 330mm EIA-481 PDF

    Untitled

    Abstract: No abstract text available
    Text: intervil 76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER


    OCR Scan     		HUF76121SK8 100ms. PDF

    76121P

    Abstract: 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: HUF76121P3, 76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76121P3, HUF76121S3S 1999ucts 76121P 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 PDF

    76121P

    Abstract: 133E-9
    Text: HUF76121P3, 76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76121P3, HUF76121S3S 76121P 133E-9 PDF

    TB370

    Abstract: AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA
    Text: 76121SK8 Data Sheet December 2001 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76121SK8 TB370 AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA PDF

    76121P

    Abstract: 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5
    Text: HUF76121P3, 76121S3S Semiconductor Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs [ /Title are manufactured using the HUF76 innovative UltraFET process. 121P3, This advanced process technology


    Original     		HUF76121P3, HUF76121S3S HUF76 121P3, HUF76 121S3S low30V, HUF76121 76121P 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5 PDF

    76121p

    Abstract: No abstract text available
    Text: HUF76121P3, 76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76121P3, HUF76121S3S 2002lopment. 76121p PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    76121P

    Abstract: 76121S
    Text: in t e la i I HUF76121P3, 76121S3S D a ta S h e e t 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channei power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF76121P3, HUF76121S3S HUF76121S3S AN7254 AN7260. 76121P 76121S PDF

    76121P

    Abstract: 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: HUF76121P3, 76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76121P3, HUF76121S3S 76121P 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: 76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76121SK8 PDF

    76121P

    Abstract: 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4
    Text: HUF76121P3, 76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF76121P3, HUF76121S3S 76121P 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		HUF76121SK8 TA76121 MS-012AA PDF

    76121P

    Abstract: No abstract text available
    Text: HUF76121P3, 76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF76121P3, HUF76121S3S HUF76121 76121P PDF

    AN7254

    Abstract: AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA TB370
    Text: 76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76121SK8 AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA TB370 PDF