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    N-CHANNEL POWER MOSFETS Search Results

    N-CHANNEL POWER MOSFETS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL POWER MOSFETS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MAX1614 High-Side, n-Channel MOSFET Switch Driver LE AVAILAB _General Description The MAX1614 drives high-side, n-channel power MOSFETs to provide battery power-switching functions in portable equipment. The n-channel power MOSFETs typically have


    Original     		MAX1614 MAX1614 PDF

    12v battery protection from deep discharge

    Abstract: MAX1614 MAX1614EUA
    Text: 19-1176; Rev 0; 12/96 High-Side, N-Channel MOSFET Switch Driver _Features The MAX1614 drives high-side, N-channel power MOSFETs to provide battery power-switching functions in portable equipment. N-channel power MOSFETs typically have


    Original     		MAX1614 21-0036D 12v battery protection from deep discharge MAX1614EUA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .


    Original     		OT-363 CJ7252KDW OT-363 2N7002K CJ502K PDF

    MAX1614

    Abstract: MAX1614EUA MAX1614EUA T 12v battery protection from deep discharge
    Text: 19-1176; Rev 1; 6/11 High-Side, n-Channel MOSFET Switch Driver The MAX1614 drives high-side, n-channel power MOSFETs to provide battery power-switching functions in portable equipment. The n-channel power MOSFETs typically have one-third the on-resistance of p-channel MOSFETs of similar size and cost. An internal micropower regulator and


    Original     		MAX1614 MAX1614 MAX1614EUA MAX1614EUA T 12v battery protection from deep discharge PDF

    IRFZ44 pwm pv charge controller circuit diagram

    Abstract: motor driver IRFZ44 gate drive for mosfet irfz44 IRFZ44 "pin compatible" IRFZ44 COMPLEMENT OF IRFZ44 IRFZ44 mosfet motor driver full bridge 10A mosfet class d Amplifier 200w circuit diagrams application irfz44
    Text: LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off


    Original     		LT1160/LT1162 1160/LT1162 180ns 000pF LT1910 LTC1922-1 LTC1923 28-Pin 11602fa IRFZ44 pwm pv charge controller circuit diagram motor driver IRFZ44 gate drive for mosfet irfz44 IRFZ44 "pin compatible" IRFZ44 COMPLEMENT OF IRFZ44 IRFZ44 mosfet motor driver full bridge 10A mosfet class d Amplifier 200w circuit diagrams application irfz44 PDF

    motor driver IRFZ44

    Abstract: 12v 10A dc driver motor control mosfet motor driver full bridge 10A gate drive for mosfet irfz44 IRFZ44 pwm pv charge controller circuit diagram IRFZ44 mosfet 12v irfz44 LT1160 IRFZ44 equivalent LT1162
    Text: LT1160/LT1162 Half-/Full-Bridge N-Channel Power MOSFET Drivers U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off


    Original     		LT1160/LT1162 1160/LT1162 180ns 000pF 152mm) 254mm) LT1158 LT1336 motor driver IRFZ44 12v 10A dc driver motor control mosfet motor driver full bridge 10A gate drive for mosfet irfz44 IRFZ44 pwm pv charge controller circuit diagram IRFZ44 mosfet 12v irfz44 LT1160 IRFZ44 equivalent LT1162 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 SiA533EDJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRP623

    Abstract: IRP621 IRF620 IRF620 application IRF621 IRF622 IRF623 TC 3162
    Text: - Standard Power MOSFETs IRF620, IRF621, IRF622, IRF623 File Number 1577 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		IRF620, IRF621, IRF622, IRF623 50V-200V IRF622 IRF623 IRP623 IRP621 IRF620 IRF620 application IRF621 TC 3162 PDF

    1RF520

    Abstract: IRFS20 1rf520 transistor RF521 transistor IRF520 IRF522 mosfet 1000 amper IRFS22 IRF520 IRF521
    Text: -F ile N u m b e r Standard Power MOSFETs IRF520, IRF521, IRF522, IRF523 1574 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL ENHA N C EM EN T MODE


    OCR Scan     		IRF520, IRF521, IRF522, IRF523 0V-100V IRF522 IRF523 1RF520 IRFS20 1rf520 transistor RF521 transistor IRF520 mosfet 1000 amper IRFS22 IRF520 IRF521 PDF

    2N6784

    Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
    Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds


    OCR Scan     		2N6784 2N6784 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX PDF

    IRF612

    Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
    Text: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V


    OCR Scan     		IRF610, IRF611, IRF612, IRF613 50V-200V IRF612 IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513# PDF

    IRF530

    Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
    Text: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V


    OCR Scan     		IRF530, IRF531, IRF532, IRF533 0V-100V IRF532 50V0SS IRF530 L10M IRF531 J56-1 IRF530 mosfet PDF

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500 PDF

    IRF3303

    Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
    Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •


    OCR Scan     		IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331 PDF

    2N6901

    Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited


    OCR Scan     		2N6802 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF MIL-S-19500/ 2N6901 mosfet 2n6788 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500 PDF

    IRFD321

    Abstract: IRFD322 IRFD323 transistor d722 IRFD320 irf032
    Text: Standard Power MOSFETs- IRFD320, IRFD321, IRFD322, IRFD323 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 0.5 A and 0.4 A, 350 V - 400 V


    OCR Scan     		IRFD320, IRFD321, IRFD322, IRFD323 92CS-33741 IRFD323 IRFD321 IRFD322 transistor d722 IRFD320 irf032 PDF

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		2N6792 2N6792 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6792 JANTX C055 LH0063 QPL-19500 2N6904 PDF

    IRFD2Z3

    Abstract: IRFD2Z0 A0025 43538
    Text: Standard Power MOSFETs- IRFD2Z0, IRFD2Z1, IRFD2Z2, IRFD2Z3 File N u m b e r 2329 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL EN HANCEM ENT MODE 0.30 A and Cl.32 A, 150 V- 200 V


    OCR Scan     		9ZCS-33741 92CS-45S39 IRFD2Z3 IRFD2Z0 A0025 43538 PDF

    OA 161 diode

    Abstract: IRFF120 IRFF121 IRFF122 IRFF123 3ws7
    Text: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 File N u m b e r 1563 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs on = 0.30 Q and 0.40 O Features:


    OCR Scan     		IRFF120, IRFF121, IRFF122, IRFF123 0V-100V IRFF122 IRFF123 OA 161 diode IRFF120 IRFF121 3ws7 PDF

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan     		2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B PDF

    IRF423

    Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
    Text: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:


    OCR Scan     		IRF420, IRF421, IRF422, IRF423 50V-500V IRF422 IRF423 IF422 ir*420 SM 3117 circuit diagram IRF420 IRF421 PDF

    RLP5N08LE

    Abstract: 720 transistor transistor field-effect transistor
    Text: — POWER MOSFETs 7 INTELLIGENT DISCRETES PAGE INTELLIGENT DISCRETE DATA SHEETS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor 7-3 RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs 7-8 RLP1N06CLE


    OCR Scan     		RFB18N10CS RFV10N50BE RLP1N06CLE RLP1N08LE RLP5N08LE 720 transistor transistor field-effect transistor PDF