IRFF330 Search Results

IRFF330 Price and Stock

Filter by Manufacturer


Infineon Technologies AG IRFF330 IRFF330 Series 400 V 1.15 Ohm 33 nC Through Hole Hexfet Transistor - TO-39
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Future Electronics	IRFF330	Tray			109	1 $17.64 10 $17.41 100 $16.8 1000 $16.8 10000 $16.8	Buy Now
Ameya Holding Limited	IRFF330		46			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Jersey Semiconductor Products, Inc. IRFF330
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFF330		1,765		1	1 $19.2 10 $19.2 100 $16.9843 1000 $15.744 10000 $15.744	Buy Now
New Jersey Semiconductor Products Inc IRFF330 3 A, 400 V, 1.15 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-205AF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFF330		1,412			1 $20.8 10 $20.8 100 $20.8 1000 $16 10000 $16	Buy Now
Harris Semiconductor IRFF330 3 A, 400 V, 1.15 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-205AF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFF330		74			1 $14.55 10 $7.275 100 $6.305 1000 $6.305 10000 $6.305	Buy Now
International Rectifier IRFF330 3 A, 400 V, 1.15 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-205AF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFF330		1			1 $14.55 10 $9.7 100 $9.7 1000 $9.7 10000 $9.7	Buy Now

IRFF330 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFF330	International Rectifier	HEXFET Transistor	Original	PDF
IRFF330	Intersil	3.5A, 400V, 1.000 ?, N-Channel Power MOSFET	Original	PDF
IRFF330	Semelab	N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package	Original	PDF
IRFF330	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFF330	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF330	International Rectifier	TO-39 Package N-Channel HEXFET	Scan	PDF
IRFF330	International Rectifier	TO-39 N-Channel HEXFET Power MOSFETs	Scan	PDF
IRFF330	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFF330	International Rectifier	N-Channel Power MOSFET in a TO-39 package 400 Volts, 1.0 Ohm	Scan	PDF
IRFF330	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFF330	Motorola	N-Channel Enhancement TMOS FET Transistor, TO-39	Scan	PDF
IRFF330	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF330	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFF330	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

IRFF330	Unknown	FET Data Book	Scan	PDF
IRFF330	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFF330	Siliconix	N-Channel Enhancement Mode Transistors TO-205AF	Scan	PDF
IRFF330R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFF330R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRFF330R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFF330 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
LD 33 regulator Abstract: JANTXV2N6800 IRFF330 JANTX2N6800 Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International	Original	90432C IRFF330 JANTX2N6800 JANTXV2N6800 MIL-PRF-19500/557 O-205AF) LD 33 regulator JANTXV2N6800 IRFF330 JANTX2N6800	PDF
Untitled Abstract: No abstract text available Text: IRFF330 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRFF330 TB334	PDF
IRFF330 Abstract: No abstract text available Text: IRFF330 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.	Original	IRFF330 O205AF) 11-Oct-02 IRFF330	PDF
Untitled Abstract: No abstract text available Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRFF330 Features 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,	Original	IRFF330	PDF
Untitled Abstract: No abstract text available Text: IRFF330 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100# IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55	Original	IRFF330	PDF
IRFF330 Abstract: TA17414 TB334 Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,	Original	IRFF330 TA17414. O-205AF IRFF330 TA17414 TB334	PDF
Untitled Abstract: No abstract text available Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International	Original	90432C IRFF330 JANTX2N6800 JANTXV2N6800 MIL-PRF-19500/557 O-205AF)	PDF
IRFF330 Abstract: TA17414 TB334 Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRFF330 TA17414. IRFF330 TA17414 TB334	PDF
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065	PDF
IRF3303 Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333 Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •	OCR Scan	IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331	PDF
2029 mosfet Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R Text: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated	OCR Scan	IRFF330R, IRFF331R, IRFF332R, IRFF333R 50V-400V 2CS-4265S IRFF332R IRFF333R 2029 mosfet ic l00a IRFF330R IRFF331R	PDF
MOSFET 4465 Abstract: 4465 mosfet Text: HARRIS A ugust IRFF330/331/332/333 IRFF330R/331R /332R /333R N -Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO-2Q5AF • 3.0A and 3.5A, 350V - 400V • rDS on = 1 o n and 1-s n • Single Pulse Avalanche Energy Rated* GATE SOURCE • SOA is Power-Disslpatlon Limited	OCR Scan	IRFF330/331/332/333 IRFF330R/331R /332R /333R IRFF330, IRFF331, IRFF332, IRFF333 IRFF330R, IRFF331R, MOSFET 4465 4465 mosfet	PDF
SMM70N05 Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800 Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113	OCR Scan	IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800	PDF
IRFF330 Abstract: IRFF333 STL300 Text: M O T O RO LA SC XSTRS/R F i 2 E D \| b3b?2S4 00âb7üb M \| IRFF330 IRFF333 CASE 79-05, STYLE 6 TO-39 TO-205AF M A X I M U M R A T IN G S Sym bol Rating IRFF330 IRFF333 Unft Drain-Source Voltage VDSS 400 350 Vdc Drain-Gate Voltage (Rq s = 1.0 mil) V d GR	OCR Scan	IRFF330 IRFF333 IRFF333 O-205AF) STL300	PDF

g371 Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371 Text: HE D \| MöSSMSa QGCHB'ìM 0 \| INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International	OCR Scan	T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371	PDF
Untitled Abstract: No abstract text available Text: • i<302271 0 D 5 4 1 7 G flb2 ■ [g HARRIS HAS IRFF330/331/332/333 IRFF330R/331R/332R/333R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features TO-2Q5AF • 3 .0 A and 3 .5 A , 3S0V - 400V • rD S o n = 1-Oft and 1 -5 0 • S in g le P u lse A valan ch e En erg y R ated*	OCR Scan	IRFF330/331/332/333 IRFF330R/331R/332R/333R FF330, FF331, RFF332, FF333 IRFF330R, IRFF331R, FF332R /RFF333R	PDF
IRFF330 Abstract: IRFF331 Text: IFHf FIELD EFFECT POWER TRANSISTOR IRFF330.331 3.5 AMPERES 400, 350 VOLTS Rd S ON = 1.0 n Preliminary This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	IRFF330 00A///sec, 250ma, RDS10NI IRFF331	PDF
irff330 Abstract: No abstract text available Text: yRgs IRFF330, IRFF331, IRFF332, IRFF333 3.0A and 3.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 3.0A and 3.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	IRFF330, IRFF331, IRFF332, IRFF333 irff330	PDF
TO-254 Abstract: T0-204 IRF450 equivalent Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS	OCR Scan	2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent	PDF
2N6788 motorola Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111 Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles	OCR Scan	IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111	PDF
IRF09120 Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120 Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ	OCR Scan	IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120	PDF
Untitled Abstract: No abstract text available Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical	OCR Scan		PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan		PDF

Privacy Settings

IRFF330 Search Results

IRFF330 Price and Stock

Infineon Technologies AG IRFF330

New Jersey Semiconductor Products, Inc. IRFF330

New Jersey Semiconductor Products Inc IRFF330

Harris Semiconductor IRFF330

International Rectifier IRFF330

IRFF330 Datasheets (20)

IRFF330 Datasheets Context Search

LD 33 regulator

Untitled

IRFF330

Untitled

Untitled

IRFF330

Untitled

IRFF330

IRF460

IRF3303

2029 mosfet

MOSFET 4465

SMM70N05

IRFF330

g371

Untitled

IRFF330

irff330

TO-254

2N6788 motorola

IRF09120

Untitled

triac zd 607

EATON CM20A