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    IRFD2Z0 Search Results

    IRFD2Z0 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFD2Z0 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD2Z0 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD2Z0 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD2Z0 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD2Z0 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    IRFD2Z0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    irfd2z0

    Abstract: 0n 4409 diode 4408
    Text: h a r r is IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N -Channel Enhancem ent-M ode Power Field-Effect Transistors A ug ust 1 9 9 1 Package Features 4 - P IN D IP T O P V IEW • 0.30A and 0.32A, 150V - 200V • rDS on = 5.0H and 6.5H • S O A is Pow er-Dissipation Limited


    OCR Scan     		PDF 92CS-43539 irfd2z0 0n 4409 diode 4408

    IRFD2Z3

    Abstract: IRFD2Z0 A0025 43538
    Text: Standard Power MOSFETs- IRFD2Z0, IRFD2Z1, IRFD2Z2, IRFD2Z3 File N u m b e r 2329 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL EN HANCEM ENT MODE 0.30 A and Cl.32 A, 150 V- 200 V


    OCR Scan     		PDF 9ZCS-33741 92CS-45S39 IRFD2Z3 IRFD2Z0 A0025 43538

    IRFD2Z0

    Abstract: D82AN2
    Text: IRFD2Z0,2Z1 D82AN2.M2 GW HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.32 AMPERES


    OCR Scan     		PDF D82AN2 00A///S, irfd2z1/d82am2 irfd2z0/d82an2 100ms IRFD2Z0

    Untitled

    Abstract: No abstract text available
    Text: 4 3 0 5 57 1 0 0 S 4 1 1 5 17T • H a r r is HAS IRFD2Z0, IRFD2Z1 IRFD2Z2, IRFD2Z3 N-Channel Enhancement-Mode Power Field-Effect Transistors A ug ust 1 9 9 1 Features Package 4 -P IN DIP TOP VIEW • 0.30A and 0.32A, 150V - 200V • rD S on — 5 .O il and 6 .5 0


    OCR Scan     		PDF 92CS-4Ã

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    1RFP250

    Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
    Text: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32


    OCR Scan     		PDF 000570b O-204 O-205 O-220 O-247 irf223 irf623 irff233 irf221 irf621 1RFP250 IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241