12n60a
Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60a
12N60L
12n60 dc
12n60b
12A 650V MOSFET
12N-60a
power mosfet 200A
12N60L-x-TF3-T
12N60G
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12n60 dc
Abstract: 12n60
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60 dc
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12n60a
Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
QW-R502-170
12n60a
UTC12N60
12N-60a
12N60B
12N60L
12N60-A
12N60-B
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7n60a
Abstract: mosfet 600V 7A N-CHANNEL 7N60AL
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
7N60AL
QW-R502-111.
mosfet 600V 7A N-CHANNEL
7N60AL
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111C
Abstract: 7N60AL 7N60A 7N60
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
7N60AL
7N60AG
VQW-R502-111
111C
7N60AL
7N60
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7N60A
Abstract: 7N60AL D7N60A 200v 3A ultra fast recovery diode
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
7N60AL
7N60AG
VQW-R502-111
7N60AL
D7N60A
200v 3A ultra fast recovery diode
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7N60A
Abstract: 7N60AL MOSFET 600V 7A
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
7N60AL
QW-R502-111
7N60AL
MOSFET 600V 7A
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20N6065
Abstract: 20N60 15N60 50BVDSS p 20n60 D-68623 20n60 G IXTM15N60 K 15N60 tr/SD 10 N60
Text: VDSS MegaMOSTMFET IXTH/IXTM 15 N60 600 V IXTH/IXTM 20 N60 600 V ID25 RDS on 15 A 0.50 Ω 20 A 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V V GS Continuous
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15N60
20N60
O-204
O-247
20N6065
20N60
15N60
50BVDSS
p 20n60
D-68623
20n60 G
IXTM15N60
K 15N60
tr/SD 10 N60
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7N60P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 = 7 ID25 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 600 600
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7N60P
405B2
7N60P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a
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15N60
15N60
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20N60
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient
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20N60
15N60
O-247
O-204
O-204
O-247
20N60
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20n60
Abstract: 20N60 datasheet p 20n60 15n60 20n60 to-247
Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V = 20 A ID25 RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient
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20N60
15N60
O-247
O-204
O-204
O-247
20n60
20N60 datasheet
p 20n60
15n60
20n60 to-247
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14n60p
Abstract: No abstract text available
Text: IXTA 14N60P IXTP 14N60P IXTQ 14N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 14 A ≤ 550 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous
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14N60P
14N60P
O-263
O-220
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22N60P
Abstract: No abstract text available
Text: IXTQ 22N60P IXTT 22N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 V = 22 A ≤ 330 mΩ Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous
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22N60P
22N60P
O-268
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IXTV18N60P
Abstract: PLUS220SMD
Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous
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18N60P
18N60PS
PLUS220
IXTV18N60P
2005IXYS
IXTV18N60P
PLUS220SMD
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10n60p
Abstract: d 1065
Text: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V
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10N60P
O-220
O-263
O-263)
O-263
10n60p
d 1065
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IXTH26N60P
Abstract: IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD
Text: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V
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IXTH26N60P
IXTQ26N60P
IXTT26N60P
IXTV26N60P
IXTV26N60PS
O-247
IXTH26N60P
IXTQ26N60P
IXTT26N60P
IXTV26N60P
IXTV26N60PS
PLUS220SMD
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7N60P
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS
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7N60P
03-21-06B
7N60P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V
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IXTH26N60P
IXTQ26N60P
IXTT26N60P
IXTV26N60P
IXTV26N60PS
O-247
IXTH26N60P
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IXTM80N60
Abstract: diode c248 20n60vd
Text: IXTH/IXTM 20N60 VDSS = 600 V lD25 = 20 A MegaMOS FET ^ D S o n " ß N-Channel Enhancement Mode Symbol Test Conditions VDSS ^ V„on Tj = 25° C to 1 50° C; RGS= Maximum Ratings =25°Cto 150°C 1 M£2 600 V 600 V v GS Continuous ±20 V v GSM Transient
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20N60
15N60
O-247
O-204
O-204
O-247
C2-50
IXTM80N60
diode c248
20n60vd
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tc 144 e
Abstract: No abstract text available
Text: nixYS HiPerFET Power MOSFETs IXFK36N60 IXFN36N60 v¥ DSS ^D25 D DS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t trr Preliminary data v DSS Tj = 25°C to 150°C 600 600 V VoOR Tj = 25°C to 150°C; RGS = 1 Mi2 600 600 V VGS v GSM Continuous
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IXFK36N60
IXFN36N60
O-264
OT-227
tc 144 e
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20NG0
Abstract: 15n60 DI-5 f sss 20n60
Text: VDSS MegaMOS FET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V R DS on ^D25 15 A 0.50 Q 20 A 0.35 Ü N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C 600 Tj = 25°C to 150°C; Ros = 1 M il 600 V Vos Continuous
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15N60
20N60
O-247
O-204
O-204
O-247
C2-56
C2-57
20NG0
DI-5
f sss 20n60
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20n60 to-247
Abstract: 20N60 20N60D 91526E
Text: ÖIXYS VDSS HiPerFET Power MOSFETs IXFH 15N60 IXFH 20N60 600 V 15 A 600 V 20 A t <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions VDSS ^ vDGB «9 Maximum Ratings V Tj =25°C to150°C ;R GS= 1 Mi2 600 V Vos Continuous
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15N60
20N60
Cto150
20N60
O-247
20n60 to-247
20N60D
91526E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • 600 W, SO V, 80 MHz N-CHANNEL
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MRF154
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