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    7N60 Search Results

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    7N60 Price and Stock

    STMicroelectronics STD7N60M2

    MOSFET N-CH 600V 5A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STD7N60M2 Reel 10,000 2,500
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    • 10000 $0.53412
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    STMicroelectronics STD7N60M2 2,243 1
    • 1 $0.98
    • 10 $0.8
    • 100 $0.62
    • 1000 $0.53
    • 10000 $0.53
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    ComSIT USA STD7N60M2 2,500
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    Chip Stock STD7N60M2 106,000
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    onsemi FCD7N60TM

    MOSFET N-CH 600V 7A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCD7N60TM Reel 7,500 2,500
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    • 10000 $0.94612
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    Mouser Electronics FCD7N60TM 19,053
    • 1 $2.17
    • 10 $1.84
    • 100 $1.35
    • 1000 $1.01
    • 10000 $0.946
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    Newark FCD7N60TM Cut Tape 1,720 5
    • 1 $2.46
    • 10 $2.11
    • 100 $1.75
    • 1000 $1.64
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    Richardson RFPD FCD7N60TM 2,500
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    Infineon Technologies AG SPD07N60C3ATMA1

    LOW POWER_LEGACY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD07N60C3ATMA1 Reel 2,500 2,500
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    Avnet Americas SPD07N60C3ATMA1 Reel 22,500 15 Weeks 2,500
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    Chip1Stop SPD07N60C3ATMA1 2,500
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    SPD07N60C3ATMA1 119
    • 1 $1.4543
    • 10 $1.283
    • 100 $0.9066
    • 1000 $0.9066
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    onsemi HGTD7N60C3S9A

    IGBT 600V 14A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTD7N60C3S9A Cut Tape 1,828 1
    • 1 $2.64
    • 10 $1.702
    • 100 $2.64
    • 1000 $0.86537
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    HGTD7N60C3S9A Digi-Reel 1,828 1
    • 1 $2.64
    • 10 $1.702
    • 100 $2.64
    • 1000 $0.86537
    • 10000 $0.86537
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    onsemi FCA47N60-F109

    MOSFET N-CH 600V 47A TO3PN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCA47N60-F109 Tube 301 1
    • 1 $12.48
    • 10 $12.48
    • 100 $7.517
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    Avnet Silica FCA47N60-F109 30 18 Weeks 30
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    New Advantage Corporation FCA47N60-F109 30 1
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    • 100 $10.23
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    Find more 7N60 price and stock on Findchips.com

    7N60 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7N60 Unisonic Technologies 7.4 Amps, 600 Volts N-CHANNEL MOSFET Original PDF
    7N60A Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60AL-x-TA3-T Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60A-x-TA3-T Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60A-x-TF3-T Unisonic Technologies 7 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60B IXYS Hiperfast IGBT Original PDF
    7N60C IXYS Hiperfast IGBT Lightspeed Series Original PDF
    7N60C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N60C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N60C3S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    7N60L Unisonic Technologies 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF
    7N60L-TA3-T Unisonic Technologies 7.4 Amps, 600 Volts N-CHANNEL MOSFET Original PDF
    7N60-TA3-T Unisonic Technologies 7.4 Amps, 600 Volts N-CHANNEL MOSFET Original PDF
    7N60-TF3-T Unisonic Technologies 7.4 Amps, 600 Volts N-CHANNEL MOSFET Original PDF

    7N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7N60C

    Abstract: TO-220 footprint
    Text: HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 7N60C O-220AB O-263 tempera020 728B1 7N60C TO-220 footprint

    DIODE 349

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60Z 7N60Z O-220lues QW-R502-349 DIODE 349

    DIODE 349

    Abstract: 7n60z
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60Z 7N60Z QW-R502-349 DIODE 349

    7N60C

    Abstract: No abstract text available
    Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 7N60CD1 O-220AB O-263 728B1 7N60C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A VQW-R502-111

    7n60b

    Abstract: DS98977
    Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V VCES IC25 VCE sat tfi = 600 V


    Original     		PDF 7N60BD1 150ns O-220AB O-263 728B1 7n60b DS98977

    7N60

    Abstract: No abstract text available
    Text: 7N60 7 Amps， ，600Volts N-Channel MOSFET • Description The 7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET7N60 O-220 O220F 7N60

    7n60b

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L QW-R502-076 7n60b

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60-Q 7N60-Q 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-Tt QW-R502-983.

    7N60B

    Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60

    7N60C

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 7N60C IXGP 7N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 7N60C 7N60C O-220AB O-263 O-220 O-220)

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi = 600 V = 14 A = 2.0 V = 150ns Maximum Ratings 600 600 V Continuous


    Original     		PDF 7N60BD1 150ns O-220AB O-263 728B1

    7N60A

    Abstract: 7N60AL MOSFET 600V 7A
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A 7N60AL QW-R502-111 7N60AL MOSFET 600V 7A

    7N60C

    Abstract: TO-220AB footprint
    Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C


    Original     		PDF 7N60CD1 7N60CD1 O-220AB O-263 7N60C TO-220AB footprint

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C


    Original     		PDF 7N60CD1 O-220AB O-263

    UTC7N60L

    Abstract: 7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 7N60L 7N60L 7N60LL QW-R502-189 UTC7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 7N60K 7N60K QW-R502-776

    7n60a

    Abstract: mosfet 600V 7A N-CHANNEL 7N60AL
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching


    Original     		PDF 7N60A 7N60A 7N60AL QW-R502-111. mosfet 600V 7A N-CHANNEL 7N60AL

    7N60P

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS


    Original     		PDF 7N60P O-220 O-263 03-21-06B 7N60P

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 MΩ V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A


    Original     		PDF 7N60C O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C


    Original     		PDF 7N60B O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 7N60K-MTQ 7N60K-MTQ 7N60KL-TA3-T QW-R205-025

    7N60B

    Abstract: No abstract text available
    Text: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous


    OCR Scan     		PDF 7N60B 7N60B O-220AB O-263 O-220

    7N60C

    Abstract: LI 20 AB
    Text: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V


    OCR Scan     		PDF 7N60C 7N60C O-22QAB O-263 LI 20 AB