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STMicroelectronics STL7N60M2 MOSFET N-CH 600V 5A POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL7N60M2	Digi-Reel	2,900		1	1 $2.12 10 $1.353 100 $2.12 1000 $0.6697 10000 $0.6697	Buy Now
	STL7N60M2	Cut Tape	2,900		1	1 $2.12 10 $1.353 100 $2.12 1000 $0.6697 10000 $0.6697	Buy Now
STMicroelectronics	STL7N60M2		713		1	1 $2.02 10 $1.32 100 $0.89 1000 $0.7 10000 $0.7	Buy Now
TME	STL7N60M2				1	1 $1.21 10 $1.08 100 $0.96 1000 $0.77 10000 $0.68	Get Quote
Avnet Silica	STL7N60M2			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	STL7N60M2	Cut Tape	3,000			1 $1.75 10 $1.24 100 $0.843 1000 $0.597 10000 $0.584	Buy Now

EBV Elektronik	STL7N60M2		3,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	STL7N60M2		100,000		1	1 - 10 - 100 - 1000 $0.35 10000 $0.35	Buy Now
Vishay Siliconix IRFP27N60KPBF MOSFET N-CH 600V 27A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFP27N60KPBF	Tube	2,477		1	1 $10.5 10 $10.5 100 $10.5 1000 $4.905 10000 $4.905	Buy Now
RS	IRFP27N60KPBF	Bulk			500	1 - 10 - 100 - 1000 $7.65 10000 $7.65	Get Quote
ComSIT USA	IRFP27N60KPBF		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FCP7N60 MOSFET N-CH 600V 7A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCP7N60	Tube	902		1	1 $3.33 10 $3.33 100 $3.33 1000 $1.13898 10000 $1.09863	Buy Now
Newark	FCP7N60	Bulk	514		1	1 $3.08 10 $2.36 100 $1.65 1000 $1.37 10000 $1.37	Buy Now
Richardson RFPD	FCP7N60				1,000	1 - 10 - 100 - 1000 $1.1 10000 $1.1	Buy Now
Avnet Silica	FCP7N60			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FCP7N60		400	18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	FCP7N60		300		1	1 - 10 - 100 $4.6 1000 $4.26 10000 $4.26	Buy Now
STMicroelectronics STB47N60DM6AG AUTOMOTIVE-GRADE N-CHANNEL 600 V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STB47N60DM6AG	Digi-Reel	889		1	1 $7.83 10 $5.321 100 $7.83 1000 $3.33438 10000 $3.33438	Buy Now
	STB47N60DM6AG	Cut Tape	889		1	1 $7.83 10 $5.321 100 $7.83 1000 $3.33438 10000 $3.33438	Buy Now
STMicroelectronics	STB47N60DM6AG		537		1	1 $6.71 10 $4.67 100 $3.53 1000 $3.27 10000 $3.27	Buy Now
ComSIT USA	STB47N60DM6AG		420			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STB47N60DM6AG			15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	STB47N60DM6AG	Bulk	1,000			1 $5.89 10 $4.37 100 $3.31 1000 $2.93 10000 $2.93	Buy Now
STMicroelectronics STW37N60DM2AG MOSFET N-CH 600V 28A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STW37N60DM2AG	Tube	600		1	1 $6.36 10 $6.36 100 $3.69367 1000 $6.36 10000 $6.36	Buy Now
STMicroelectronics	STW37N60DM2AG		600		1	1 $5.35 10 $5.35 100 $3.34 1000 $3.34 10000 $3.34	Buy Now
Avnet Silica	STW37N60DM2AG			53 Weeks	600	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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7N60 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
7N60	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF
7N60A	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60AL-x-TA3-T	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60A-x-TA3-T	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60A-x-TF3-T	Unisonic Technologies	7 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60B	IXYS	Hiperfast IGBT	Original	PDF
7N60C	IXYS	Hiperfast IGBT Lightspeed Series	Original	PDF
7N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60C3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60C3S	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
7N60L	Unisonic Technologies	7.4 Amps, 600/650 Volts N-CHANNEL MOSFET	Original	PDF
7N60L-TA3-T	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF
7N60-TA3-T	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF

7N60-TF3-T	Unisonic Technologies	7.4 Amps, 600 Volts N-CHANNEL MOSFET	Original	PDF

7N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
7N60C Abstract: TO-220 footprint Text: HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	7N60C O-220AB O-263 tempera020 728B1 7N60C TO-220 footprint	PDF
DIODE 349 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	7N60Z 7N60Z O-220lues QW-R502-349 DIODE 349	PDF
DIODE 349 Abstract: 7n60z Text: UNISONIC TECHNOLOGIES CO., LTD 7N60Z Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60Z is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	7N60Z 7N60Z QW-R502-349 DIODE 349	PDF
7N60C Abstract: No abstract text available Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	7N60CD1 O-220AB O-263 728B1 7N60C	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching	Original	7N60A 7N60A VQW-R502-111	PDF
7n60b Abstract: DS98977 Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V VCES IC25 VCE sat tfi = 600 V	Original	7N60BD1 150ns O-220AB O-263 728B1 7n60b DS98977	PDF
7N60 Abstract: No abstract text available Text: 7N60 7 Amps，，600Volts N-Channel MOSFET • Description The 7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.	Original	Amps600Volts ET7N60 O-220 O220F 7N60	PDF
7n60b Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	7N60L QW-R502-076 7n60b	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	7N60-Q 7N60-Q 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-Tt QW-R502-983.	PDF
7N60B Abstract: 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60 Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	7N60L 7N60G QW-R502-076 7N60B 7N60B free 7N60 7n60 mosfet DATASHEET OF 7N60 7N60G-x power mosfet 600v 7N60L 7N60A OF 7N60	PDF
7N60C Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 7N60C IXGP 7N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	7N60C 7N60C O-220AB O-263 O-220 O-220)	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi = 600 V = 14 A = 2.0 V = 150ns Maximum Ratings 600 600 V Continuous	Original	7N60BD1 150ns O-220AB O-263 728B1	PDF
7N60A Abstract: 7N60AL MOSFET 600V 7A Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching	Original	7N60A 7N60A 7N60AL QW-R502-111 7N60AL MOSFET 600V 7A	PDF
7N60C Abstract: TO-220AB footprint Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C	Original	7N60CD1 7N60CD1 O-220AB O-263 7N60C TO-220AB footprint	PDF

Untitled Abstract: No abstract text available Text: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C	Original	7N60CD1 O-220AB O-263	PDF
UTC7N60L Abstract: 7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode Text: UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	7N60L 7N60L 7N60LL QW-R502-189 UTC7N60L 7N60LL 7N60L-A 20v 3a ultra fast recovery diode	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	7N60K 7N60K QW-R502-776	PDF
7n60a Abstract: mosfet 600V 7A N-CHANNEL 7N60AL Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching	Original	7N60A 7N60A 7N60AL QW-R502-111. mosfet 600V 7A N-CHANNEL 7N60AL	PDF
7N60P Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS	Original	7N60P O-220 O-263 03-21-06B 7N60P	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 MΩ V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A	Original	7N60C O-220AB O-263 728B1	PDF
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi IXGA 7N60B IXGP 7N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A IC90 TC = 90°C	Original	7N60B O-220AB O-263 728B1	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	7N60K-MTQ 7N60K-MTQ 7N60KL-TA3-T QW-R205-025	PDF
7N60B Abstract: No abstract text available Text: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous	OCR Scan	7N60B 7N60B O-220AB O-263 O-220	PDF
7N60C Abstract: LI 20 AB Text: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V	OCR Scan	7N60C 7N60C O-22QAB O-263 LI 20 AB	PDF

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STMicroelectronics STL7N60M2

Vishay Siliconix IRFP27N60KPBF

onsemi FCP7N60

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STMicroelectronics STW37N60DM2AG

7N60 Datasheets (15)

7N60 Datasheets Context Search

7N60C

DIODE 349

DIODE 349

7N60C

Untitled

7n60b

7N60

7n60b

Untitled

7N60B

7N60C

Untitled

7N60A

7N60C

Untitled

UTC7N60L

Untitled

7n60a

7N60P

Untitled

Untitled

Untitled

7N60B

7N60C