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    IXTT26N60P Search Results

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    IXTT26N60P Price and Stock

    Littelfuse Inc IXTT26N60P

    MOSFET N-CH 600V 26A TO268
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    DigiKey IXTT26N60P Tube 300
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    Newark IXTT26N60P Bulk 300
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    IXYS Corporation IXTT26N60P

    MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
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    Mouser Electronics IXTT26N60P
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    Future Electronics IXTT26N60P Tube 24 Weeks 30
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    Bristol Electronics IXTT26N60P 30
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    Quest Components IXTT26N60P 24
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    TTI IXTT26N60P Tube 300
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    TME IXTT26N60P 1
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    IXYS Integrated Circuits Division IXTT26N60P

    MOSFET DIS.26A 600V N-CH TO268(D3PAK) POLARHV SMT
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    Ozdisan Elektronik IXTT26N60P
    • 1 $11.34596
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    IXTT26N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTT26N60P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 26A TO-268 D3 Original PDF

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    IXTH26N60P

    Abstract: IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD
    Text: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		PDF IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS O-247 IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V


    Original     		PDF IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS O-247 IXTH26N60P