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    N-CHANNEL 12-V D-S MOSFET Search Results

    N-CHANNEL 12-V D-S MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 12-V D-S MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4838DY

    Abstract: No abstract text available
    Text: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    PDF Si4838DY 08-Apr-05

    Si4838DY

    Abstract: No abstract text available
    Text: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    PDF Si4838DY S-03267--Rev. 02-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    PDF Si4838DY 18-Jul-08

    Si4838DY

    Abstract: si4838
    Text: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    PDF Si4838DY S-03662--Rev. 14-Apr-03 si4838

    Untitled

    Abstract: No abstract text available
    Text: Si4838DY New Product Vishay Siliconix N-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    PDF Si4838DY S-02649--Rev. 04-Dec-00

    Untitled

    Abstract: No abstract text available
    Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9


    Original
    PDF Si7540DP 07-mm 500-kHz 08-Apr-05

    Si7540DP

    Abstract: No abstract text available
    Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9


    Original
    PDF Si7540DP 07-mm 500-kHz S-31728--Rev. 18-Aug-03

    Si7540DP

    Abstract: DIODE TH 5 N
    Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET


    Original
    PDF Si7540DP 07-mm 500-kHz S-22387--Rev. 16-Dec-02 DIODE TH 5 N

    Untitled

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original
    PDF Si1557DH SC-70 OT-363 SC-70 S-21453--Rev. 19-Aug-02

    Si1557DH

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original
    PDF Si1557DH SC-70 OT-363 SC-70 S-21684--Rev. 30-Sep-02

    Si1557DH

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original
    PDF Si1557DH SC-70 OT-363 SC-70 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package


    Original
    PDF Si1557DH SC-70 OT-363 SC-70 08-Apr-05

    SI7540DP

    Abstract: No abstract text available
    Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET


    Original
    PDF Si7540DP 07-mm 500-kHz S-21417â 12-Aug-02

    SI7540DP

    Abstract: No abstract text available
    Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET


    Original
    PDF Si7540DP 07-mm 500-kHz S-21193--Rev. 29-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original
    PDF Si4884DY S99-041--Rev. 04-Oct-99

    si4884dy

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original
    PDF Si4884DY S-61804--Rev. 21-Jun-99

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


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    PDF SiA533EDJ 081at 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original
    PDF SiA533EDJ 081at 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original
    PDF SiA533EDJ 081at 2002/95/EC SC-70-6 11-Mar-11

    si4402d

    Abstract: Si4402DY si4402
    Text: Si4402DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


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    PDF Si4402DY 08-Apr-05 si4402d si4402

    Untitled

    Abstract: No abstract text available
    Text: SiA527DJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) () Max. 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.041 at VGS = - 4.5 V 0.060 at VGS = - 2.5 V


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    PDF SiA527DJ SC-70-6 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-70-6

    Abstract: SiA533EDJ 65706
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original
    PDF SiA533EDJ 081at 2002/95/EC 18-Jul-08 SC-70-6 65706

    S99-041

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


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    PDF Si4884DY S99-041--Rev. 04-Oct-99 S99-041

    Si6552DQ

    Abstract: No abstract text available
    Text: Tem ic SÌ6552DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel P-Channel 20 12 r DS(on) ( ß ) I d (A) 0.08 @ VGs = 4.5 V ±2.8 0.11 @ VGS = 2.5 V ±2.1 0.1 @ VGs = -4.5 V ±2.5 0.18 @ VGS = -2.5 V


    OCR Scan
    PDF 6552DQ S-47620--Rev. 12-Aug-96 Si6552DQ