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    SIA533EDJ Price and Stock

    Vishay Siliconix SIA533EDJ-T1-GE3

    MOSFET N/P-CH 12V 4.5A PPAK8X8
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    DigiKey SIA533EDJ-T1-GE3 Digi-Reel 18,052 1
    • 1 $0.88
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    SIA533EDJ-T1-GE3 Cut Tape 18,052 1
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    SIA533EDJ-T1-GE3 Reel 17,500 3,000
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    Quest Components SIA533EDJ-T1-GE3 22
    • 1 $0.39
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    Vishay Intertechnologies SIA533EDJ-T1-GE3

    N- AND P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SIA533EDJ-T1-GE3)
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    Avnet Americas SIA533EDJ-T1-GE3 Reel 6,000 18 Weeks 3,000
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    Mouser Electronics SIA533EDJ-T1-GE3 101,670
    • 1 $0.65
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    Newark SIA533EDJ-T1-GE3 Cut Tape 7,836 1
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    SIA533EDJ-T1-GE3 Reel 3,000
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    Bristol Electronics SIA533EDJ-T1-GE3 1,000
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    Quest Components SIA533EDJ-T1-GE3 800
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    TTI SIA533EDJ-T1-GE3 Reel 93,000 3,000
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    TME SIA533EDJ-T1-GE3 3,000
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    Avnet Asia SIA533EDJ-T1-GE3 20 Weeks 3,000
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    EBV Elektronik SIA533EDJ-T1-GE3 19 Weeks 3,000
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    SIA533EDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA533EDJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 12V 4.5A SC70-6 Original PDF

    SIA533EDJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SC-70-6

    Abstract: SiA533EDJ 65706
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original     		SiA533EDJ 081at 2002/95/EC 18-Jul-08 SC-70-6 65706 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA533EDJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		SiA533EDJ 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original     		SiA533EDJ 081at 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    26.5938

    Abstract: 16503 AN609
    Text: SiA533EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiA533EDJ AN609, 29-Jan-10 26.5938 16503 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original     		SiA533EDJ 081at 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original     		SiA533EDJ 081at 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a


    Original     		SiA533EDJ 081at 2002/95/EC SC-70-6 11-Mar-11 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N PDF

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 SiA533EDJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF