Si1557DH
Abstract: No abstract text available
Text: SPICE Device Model Si1557DH Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1557DH
09-Sep-02
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AN609
Abstract: Si1557DH
Text: Si1557DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1557DH
AN609
14-Nov-05
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package
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Si1557DH
SC-70
OT-363
SC-70
S-21453--Rev.
19-Aug-02
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1557DH Vishay Siliconix N- and P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V
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Si1557DH
SC-70
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Si1557DH
Abstract: No abstract text available
Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package
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Si1557DH
SC-70
OT-363
SC-70
S-21684--Rev.
30-Sep-02
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PDF
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Si1557DH
Abstract: No abstract text available
Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package
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Original
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Si1557DH
SC-70
OT-363
SC-70
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package
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Original
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Si1557DH
SC-70
OT-363
SC-70
08-Apr-05
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PDF
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Si1557DH
Abstract: No abstract text available
Text: Si1557DH Vishay Siliconix N- and P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V
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Original
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Si1557DH
SC-70
2002/95/EC
OT-363
SC-70
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1557DH Vishay Siliconix N- and P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V
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Original
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Si1557DH
SC-70
2002/95/EC
OT-363
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Si1557DH
Abstract: No abstract text available
Text: SPICE Device Model Si1557DH Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si1557DH
18-Jul-08
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PDF
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Si1557DH
Abstract: No abstract text available
Text: SPICE Device Model Si1557DH Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si1557DH
S-50232Rev.
28-Feb-05
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Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
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2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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