Si7540DP
Abstract: SI7540DP-T1-E3
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = – 4.5 V – 8.9 0.053 at VGS = – 2.5 V – 6.9 12 P-Channel – 12
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Si7540DP
07-mm
500-kHz
08-Apr-05
SI7540DP-T1-E3
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Si7540DP
Abstract: Si7540DP-T1-E3 si7540dpt1e3
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 • Halogen-free According to IEC 61249-2-21
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Si7540DP
18-Jul-08
Si7540DP-T1-E3
si7540dpt1e3
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Si7540DP
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9
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Si7540DP
07-mm
500-kHz
S-31728--Rev.
18-Aug-03
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Untitled
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 • Halogen-free According to IEC 61249-2-21
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Si7540DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI7540DP
Abstract: No abstract text available
Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET
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Si7540DP
07-mm
500-kHz
S-21193--Rev.
29-Jul-02
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so-8 vishay weight
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 • Halogen-free According to IEC 61249-2-21
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Si7540DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
so-8 vishay weight
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Si7540DP
Abstract: No abstract text available
Text: SPICE Device Model Si7540DP Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7540DP
S-60145Rev.
13-Feb-06
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m 908
Abstract: AN609 Si7540DP
Text: Si7540DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7540DP
AN609
26-Jul-07
m 908
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Si7540DP
Abstract: Si7540DP-T1-E3
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 • Halogen-free According to IEC 61249-2-21
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Si7540DP
11-Mar-11
Si7540DP-T1-E3
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Si7540DP
Abstract: No abstract text available
Text: SPICE Device Model Si7540DP Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7540DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P Channel P-Channel - 12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = - 4.5 V - 8.9 0.053 @ VGS = - 2.5 V - 6.9
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Si7540DP
07-mm
500-kHz
08-Apr-05
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SI7540DP
Abstract: No abstract text available
Text: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET
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Si7540DP
07-mm
500-kHz
S-21417â
12-Aug-02
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SI7540DP
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 • Halogen-free According to IEC 61249-2-21
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Si7540DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 • Halogen-free According to IEC 61249-2-21
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Si7540DP
11-Mar-11
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SI7540DP
Abstract: No abstract text available
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel - 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = - 4.5 V - 8.9 0.053 at VGS = - 2.5 V - 6.9 • Halogen-free According to IEC 61249-2-21
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Si7540DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7540DP
Abstract: No abstract text available
Text: SPICE Device Model Si7540DP Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7540DP
31-Jul-02
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SI7540DP-T1-E3
Abstract: SI7540DPT1 SI7540DP
Text: Si7540DP Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel rDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 0.032 at VGS = – 4.5 V – 8.9 0.053 at VGS = – 2.5 V – 6.9 12 P-Channel – 12
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Si7540DP
07-mm
500-kHz
18-Jul-08
SI7540DP-T1-E3
SI7540DPT1
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Untitled
Abstract: No abstract text available
Text: LTC3736-1 Dual 2-Phase, No RSENSETM, Synchronous Controller with Spread Spectrum FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3736-1 is a 2-phase dual synchronous stepdown switching regulator controller with tracking that
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LTC3736-1
550kHz,
16-Lead
28-Lead
10-Pin
37361f
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Untitled
Abstract: No abstract text available
Text: LTC3776 Dual 2-Phase, No RSENSETM, Synchronous Controller for DDR/QDR Memory Termination FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory
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LTC3776
LTC3736-1
LTC3737
LTC3831
3776fa
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LTMV
Abstract: No abstract text available
Text: LTC1773 Synchronous Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1773 is a current mode synchronous buck regulator controller that drives external complementary power MOSFETs using a fixed frequency architecture. The operating supply range is from 2.65V to 8.5V, making it
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LTC1773
550kHz
250mA
LTC1877
550kHz,
600mA
LTC1878
LTC3404
LTMV
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1.5k 275v X2
Abstract: IHLP-2525CZ-01 LTC3808 LTC3808EDE LTC3809 LTC3809-1 Si4431BDY Si4860DY Si7540DP SSOP-16
Text: advertisement Low EMI Synchronous DC/DC Step-Down Controllers Offer Programmable Output Tracking – Design Note 382 Charlie Zhao Introduction The LTC 3808 synchronous DC/DC step-down controller packs numerous features required by the latest electronic devices into a low profile 0.75mm 3mm x 4mm leadless
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SSOP-16
LTC3809
LTC3809-1,
LTC3808.
LTC3809
10-pin
500mV/DIV
DN382
1.5k 275v X2
IHLP-2525CZ-01
LTC3808
LTC3808EDE
LTC3809-1
Si4431BDY
Si4860DY
Si7540DP
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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FDW2520C
Abstract: LTC3736-2 LTC3736EGN-2 Si9801DY TSSOP-8 footprint and soldering sot-23 marking g02 tssop8 flyback pwm tssop8
Text: LTC3736-2 Dual 2-Phase, No RSENSE , Synchronous Controller with Output Tracking DESCRIPTION TM FEATURES n n n n n n n n n n n n n n n n No Current Sense Resistors Required Out-of-Phase Controllers Reduce Required Input Capacitance Tracking Function Wide VIN Range: 2.75V to 9.8V
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LTC3736-2
24-Lead
LTC3808
16-Lead
LTC3809/LTC3809-1
10-Lead
37362fb
FDW2520C
LTC3736-2
LTC3736EGN-2
Si9801DY
TSSOP-8 footprint and soldering sot-23
marking g02 tssop8
flyback pwm tssop8
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4TPB150MC
Abstract: IHLP-2525CZ-01 LTC3809 LTC3809EDD MBRM120L Si7540DP 5 pin pulse transformer
Text: LTC3809 No RSENSETM, Low EMI, Synchronous DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No Current Sense Resistor Required Selectable Spread Spectrum Frequency Modulation for Low Noise Operation Constant Frequency Current Mode Operation for
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LTC3809
250kHz
750kHz)
550kHz,
LTC3776
850kHz,
24-Lead
LTC3808
3809f
4TPB150MC
IHLP-2525CZ-01
LTC3809
LTC3809EDD
MBRM120L
Si7540DP
5 pin pulse transformer
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