90N15
Abstract: No abstract text available
Text: Advance Technical Information IXTK 90N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 90 A Ω = 16 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150
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90N15
728B1
90N15
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150
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128N15
O-264
728B1
123B1
728B1
065B1
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180N15
Abstract: No abstract text available
Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150
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180N15
728B1
123B1
728B1
065B1
180N15
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150
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128N15
O-264
728B1
123B1
065B1
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75n15
Abstract: No abstract text available
Text: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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75N15
75N15
O-247
O-268
O-268
728B1
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Untitled
Abstract: No abstract text available
Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS Continuous
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180N15
O-264
728B1
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180N15
Abstract: 123B16
Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS
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180N15
728B1
123B1
728B1
065B1
180N15
123B16
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Untitled
Abstract: No abstract text available
Text: IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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128N15
O-264
728B1
123B1
728B1
065B1
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IXTH48N15
Abstract: 48n15
Text: Advance Technical Information IXTH 48N15 IXTT 48N15 High Current Power MOSFET VDSS ID25 = 150 V = 48 A Ω = 32 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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48N15
48N15
O-247
O-268
O-268
728B1
IXTH48N15
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IXTH75N15
Abstract: 75N15
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20
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75N15
O-247
405B2
IXTH75N15
75N15
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75N15
Abstract: .75N15
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous
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75N15
O-247
728B1
75N15
.75N15
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Untitled
Abstract: No abstract text available
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20
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75N15
O-247
405B2
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diode SM 88A
Abstract: transistor N 343 AD
Text: IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient
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88N15
O-247
728B1
123B1
728B1
065B1
diode SM 88A
transistor N 343 AD
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352AI
Abstract: No abstract text available
Text: Advance Technical Information IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V
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88N15
O-247
O-268
728B1
123B1
728B1
065B1
352AI
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PDF
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180N15
Abstract: No abstract text available
Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ
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180N15
728B1
180N15
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IXTH16N10D2
Abstract: IXTT16N10D2 16N10
Text: Advance Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH16N10D2
IXTT16N10D2
O-247
O-247)
O-268
100ms
16N10D2
IXTH16N10D2
IXTT16N10D2
16N10
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IXFN180N10
Abstract: No abstract text available
Text: IXFN180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 100V 180A 8m 250ns miniBLOC E153432 S Symbol Test Conditions VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C, RGS = 1M
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IXFN180N10
250ns
E153432
100ms
180N10
IXFN180N10
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL31B154KCHNNNF Product : Multi-layer Ceramic Capacitor Description : CAP, 150㎋, 100V, ±10%, X7R, 1206 A. Samsung Part Number ① Series ② Size CL 31 B 154 K C H N N N F
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CL31B154KCHNNNF
10sec.
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IRF522
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
IRF522
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
IRF642
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IRFF121
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
IRFF121
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
IRF642
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PDF
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IRF540
Abstract: irf140 IRF142 irf540 27 MHz 75 LS 541 IRF141 IRF542 VN0600D IRF630 IRF631
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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OCR Scan
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
IRF540
irf140
IRF142
irf540 27 MHz
75 LS 541
IRF141
IRF542
VN0600D
IRF630
IRF631
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PDF
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VN89AF
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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OCR Scan
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
VN89AF
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
IRF642
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PDF
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Untitled
Abstract: No abstract text available
Text: VMO 550-01F VDSS Id25 HiPerFET MOSFET Module ^ D S o n = 100V “ 590 A “ 2 .1 m O N-Channel Enhancement Mode Preliminary Data (pS Maximum Ratings Symbol Test Conditions vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100
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550-01F
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IRF 260 N
Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
Text: 640 /FI 641/FI SGS-THOMSON ELiOT@KS IRF IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R D S on Id IRF640 IRF640FI 200 V 200 V 0.18 n 0.18 n 18 A 10 A IRF641 IRF641FI 150 V 150 V 0.18 a 0.18 n 18 A 10 A . • . ■ V dss AVALANCHE RUGGEDNESS TECHNOLOGY
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OCR Scan
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641/FI
IRF640
IRF640FI
IRF641
IRF641FI
O-220
ATT220
640/FI
640/FI-64
IRF 260 N
irf 640
F640
TT220
irf 80 n
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