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    IXTH16N10D2 Price and Stock

    IXYS Corporation IXTH16N10D2

    MOSFET N-CH 100V 16A TO247
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    DigiKey IXTH16N10D2 Tube 300
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    • 1000 $12.4703
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    Future Electronics IXTH16N10D2 Tube 29 Weeks 300
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    • 100 $11.67
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    TME IXTH16N10D2 1 1
    • 1 $17.84
    • 10 $14.1
    • 100 $12.67
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    Littelfuse Inc IXTH16N10D2

    Mosfet, N-Ch, 100V, 16A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:0V; Gate Source Threshold Voltage Max:-; Product Range:- Rohs Compliant: Yes |Littelfuse IXTH16N10D2
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    Newark IXTH16N10D2 Bulk 1
    • 1 $12.22
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    IXYS Integrated Circuits Division IXTH16N10D2

    MOSFET DIS.16A 100V N-CH TO-247AD DEPLETION MODE
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    Ozdisan Elektronik IXTH16N10D2
    • 1 $17.63991
    • 10 $17.63991
    • 100 $16.4859
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    IXTH16N10D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTH16N10D2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 16A TO-247 Original PDF

    IXTH16N10D2 Datasheets Context Search

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    IXTH16N10D2

    Abstract: IXTT16N10D2 16N10
    Text: Advance Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH16N10D2 IXTT16N10D2 O-247 O-247) O-268 100ms 16N10D2 IXTH16N10D2 IXTT16N10D2 16N10

    Untitled

    Abstract: No abstract text available
    Text: IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSX Continuous ±20 V


    Original     		PDF IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2

    IXTH16N10D2

    Abstract: depletion mode mosfet 16N10D2 T16N1 ixtt16N10D2 DS100258A
    Text: Preliminary Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2 depletion mode mosfet T16N1 ixtt16N10D2 DS100258A

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		PDF AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2