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    N MOSFET 100V 200A Search Results

    N MOSFET 100V 200A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 100V 200A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E250NS10

    Abstract: JESD97 STE250NS10 isotop mosfet 100V
    Text: STE250NS10 N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE250NS10 100V <0.0055Ω 220A • Standard threshold drive ■ 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of


    Original     		PDF STE250NS10 E250NS10 E250NS10 JESD97 STE250NS10 isotop mosfet 100V

    N mosfet 100v 200A

    Abstract: FQA90N10V2 100V N-Channel MOSFET
    Text: QFET FQA90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)


    Original     		PDF FQA90N10V2 FQA90N10V2 N mosfet 100v 200A 100V N-Channel MOSFET

    N mosfet 100v 200A

    Abstract: 100V N-channel mosfet FQH90N10V2
    Text: QFET FQH90N10V2 100V N-Channel MOSFET Features Description • 105A, 100V, RDS on = 10mΩ @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 147 nC)


    Original     		PDF FQH90N10V2 FQH90N10V2 N mosfet 100v 200A 100V N-channel mosfet

    Untitled

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDP047N10 FDP047N10 O-220

    Untitled

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDP047N10 O-220

    Untitled

    Abstract: No abstract text available
    Text: FDB047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDB047N10

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTA10R220H Power MOSFET 7A, 100V N-CHANNEL FAST SWITCHING MOSFET  DESCRIPTION The UTC UTA10R220H is an N-Channel fast switching MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and low gate charge, etc.


    Original     		PDF UTA10R220H UTA10R220H UTA10R220HG-S08-R QW-R209-073

    FDP047N10

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDP047N10 O-220 FDP047N10

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		PDF FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDD1600N10ALZ FDD1600N10ALZ

    Untitled

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDP047N10 FDP047N10 O-220

    FDP047N10

    Abstract: No abstract text available
    Text: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDP047N10 O-220 FDP047N10

    FDB047N10

    Abstract: single HIGH SPEED POWER MOSFET
    Text: FDB047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDB047N10 FDB047N10 single HIGH SPEED POWER MOSFET

    Mosfet

    Abstract: SSF1006A
    Text: SSF1006A 100V N-Channel MOSFET FEATURES ID =200A  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product BV=100V RDS ON =4.7mΩ（Typ.） DESCRIPTION The SSF1006A is a new generation of high voltage and low


    Original     		PDF SSF1006A SSF1006A Mosfet

    Power MOSFET SOT-223

    Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 Power MOSFET SOT-223 st MARKING E4 JESD97 N2NE10L STN2NE10L

    STQ1NE10L-AP

    Abstract: q1ne10l Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP q1ne10l Q1NE10

    JESD97

    Abstract: N2NE10L STN2NE10L
    Text: STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 JESD97 N2NE10L STN2NE10L

    Q1NE10L

    Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L Q1NE10L JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10

    irf 100v 200A

    Abstract: IRFN150 JANTX2N7224U JANTXV2N7224U smd transistor 0081
    Text: PD - 91547C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International


    Original     		PDF 91547C IRFN150 JANTX2N7224U JANTXV2N7224U MIL-PRF-19500/592 irf 100v 200A IRFN150 JANTX2N7224U JANTXV2N7224U smd transistor 0081

    Untitled

    Abstract: No abstract text available
    Text: PD - 91547C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN150 0.07 Ω 34A HEXFET® MOSFET technology is the key to International


    Original     		PDF 91547C IRFN150 JANTX2N7224U JANTXV2N7224U MIL-PRF-19500/592

    stq1ne10l

    Abstract: Q1NE10L stq1ne10l-ap
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP Q1NE10L

    STY140NS10

    Abstract: No abstract text available
    Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™


    Original     		PDF STY140NS10 MAX247â STY140NS10

    STY140NS10

    Abstract: Max247TM MAX247
    Text: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™


    Original     		PDF STY140NS10 MAX247TM STY140NS10 Max247TM MAX247

    FQP90N10

    Abstract: No abstract text available
    Text: KSM90N10V2/KSMF90N10V2 100V N-Channel MOSFET • • • • • • TO-220F TO-220 Features 90 A, 100V, RDS on = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		PDF KSM90N10V2/KSMF90N10V2 O-220F O-220 54TYP 00x45Â FQP90N10