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    FDP045N10A Price and Stock

    onsemi FDP045N10A-F102

    MOSFET N-CH 100V 120A TO220-3
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    DigiKey FDP045N10A-F102 Tube 311 1
    • 1 $4.05
    • 10 $4.05
    • 100 $2.7525
    • 1000 $2.09492
    • 10000 $1.8925
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    Mouser Electronics FDP045N10A-F102 749
    • 1 $4.04
    • 10 $3.41
    • 100 $2.75
    • 1000 $1.97
    • 10000 $1.89
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    Verical FDP045N10A-F102 786 4
    • 1 -
    • 10 $3.686
    • 100 $2.646
    • 1000 $1.834
    • 10000 $1.816
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    Richardson RFPD FDP045N10A-F102 800
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    • 1000 $1.89
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    onsemi FDP045N10A

    MOSFET N-CH 100V 120A TO220-3
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    DigiKey FDP045N10A Tube
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    onsemi FDP045N10A-F032

    MOSFET N-CH 100V 120A TO220-3
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    DigiKey FDP045N10A-F032 Tube
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    onsemi FDP045N10A_F102

    Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: FDP045N10A-F102)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FDP045N10A_F102 Tube 20 Weeks 800
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    • 1000 $2.24072
    • 10000 $1.93792
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    FDP045N10A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDP045N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A TO-220-3 Original PDF
    FDP045N10A_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A TO-220-3 Original PDF
    FDP045N10A-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 120A TO-220-3 Original PDF

    FDP045N10A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has


    Original     		PDF FDP045N10A FDI045N10A

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		PDF FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A

    FDP045N10A

    Abstract: FDI045N10A_F102
    Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has


    Original     		PDF FDP045N10A FDI045N10A FDI045N10A_F102