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    FDD1600N10ALZ Price and Stock

    onsemi FDD1600N10ALZ

    MOSFET N-CH 100V 6.8A TO252
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    Chip1Stop FDD1600N10ALZ Cut Tape 2,270
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    onsemi FDD1600N10ALZD

    MOSFET N-CH 100V 6.8A TO252-4L
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    DigiKey FDD1600N10ALZD Digi-Reel 1
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    FDD1600N10ALZ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDD1600N10ALZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 100V 6.8A TO252-5 Original PDF
    FDD1600N10ALZD Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.8A TO252-5L Original PDF

    FDD1600N10ALZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 6.8 A, 160 mΩ Features Description • RDS on = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior


    Original     		PDF FDD1600N10ALZ

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD1600N10ALZD

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advance PowerTrench process that has been especially


    Original     		PDF FDD1600N10ALZ FDD1600N10ALZ

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode  100 V, 6.8 A, 160 m Features Description • RDS(on) = 124 m ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD1600N10ALZD

    sje 2004

    Abstract: sje 204 equivalent diode DA 68a TO-252AD fast reverse recovery time of LED
    Text: FDD1600N10ALZD N-Channel PowerTrench Boost-FET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench process that has been expecially tailored to minimize the on-state resistance and yet


    Original     		PDF FDD1600N10ALZD FDD1600N10ALZD sje 2004 sje 204 equivalent diode DA 68a TO-252AD fast reverse recovery time of LED

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 6.8 A, 160 m Features Description • RDS on = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior


    Original     		PDF FDD1600N10ALZ

    FDD1600N10ALZ

    Abstract: No abstract text available
    Text: FDD1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 6.8 A, 160 mΩ Features Description • RDS on = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD1600N10ALZ FDD1600N10ALZ

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		PDF FDD1600N10ALZD