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    STMicroelectronics STN2NE10L

    MOSFET N-CH 100V 1.8A SOT-223
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    DigiKey STN2NE10L Reel 4,000
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    N2NE10L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    N2NE10L STMicroelectronics N-channel 100V - 0.33 Ohm -2A - SOT-223 Original PDF

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    P008B DIODE

    Abstract: P008B STN2NE10L
    Text: N2NE10L N-CHANNEL 100V - 0.33Ω - 2A - SOT-223 STripFET Power MOSFET Package General features Type VDSS RDS on ID N2NE10L 100 V <0.4 Ω 1.8 A 2 • EXCEPTIONAL dv/dt CAPABILITY ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ LOW THRESHOLD DRIVE


    Original     		PDF STN2NE10L OT-223 OT-223 P008B DIODE P008B STN2NE10L

    Untitled

    Abstract: No abstract text available
    Text: N2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID N2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 OT-223 STN2NE10L

    Power MOSFET SOT-223

    Abstract: st MARKING E4 JESD97 N2NE10L STN2NE10L
    Text: N2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID N2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 Power MOSFET SOT-223 st MARKING E4 JESD97 N2NE10L STN2NE10L

    JESD97

    Abstract: N2NE10L STN2NE10L
    Text: N2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET Power MOSFET General features Type VDSS @Tjmax RDS(on) ID N2NE10L 100V <0.4Ω 1.8A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


    Original     		PDF STN2NE10L OT-223 JESD97 N2NE10L STN2NE10L