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    SGS Semiconductor Ltd STQ1NE10LAP

    N-CHANNEL 100V-0.3 OHM-1A-TO-92 STRIPFET POWER MOSFET Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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    ComSIT USA STQ1NE10LAP 2,000
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    stq1ne10l

    Abstract: Q1NE10L stq1ne10l-ap
    Text: Q1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID Q1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP Q1NE10L

    Q1NE10L

    Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
    Text: Q1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID Q1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L Q1NE10L JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10

    STQ1NE10L-AP

    Abstract: q1ne10l Q1NE10
    Text: Q1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID Q1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP q1ne10l Q1NE10