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    N MOSFET 100V 100A Search Results

    N MOSFET 100V 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 100V 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		PDF IRF520 IRF52 O220AB IRF520 irf52 0

    sil 5102

    Abstract: IRFP150 TB334
    Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		PDF IRFP150 sil 5102 IRFP150 TB334

    IRFP150N

    Abstract: No abstract text available
    Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,


    Original     		PDF IRFP150N O-247 IRFP150N

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10V QW-R502-914,

    Mosfet N-Channel 19N10, TO-251

    Abstract: 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 Mosfet N-Channel 19N10, TO-251 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET

    1E14

    Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,


    Original     		PDF JANSR2N7292 FRF150R4 R2N72 1000K 1E14 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: 2E12 FSL110R4 JANSR2N7410
    Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 [ /Title JANS R2N74 10 /Subject (3.5A, 100V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3.5A, 100V,


    Original     		PDF JANSR2N7410 FSL110R4 R2N74 Rad Hard in Fairchild for MOSFET 2E12 FSL110R4 JANSR2N7410

    19n10l

    Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 19n10l Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R

    19n10

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 19n10

    irf530

    Abstract: 929E-10 IRF530 fairchild
    Text: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power


    Original     		PDF IRF530 IRF53 O220AB O-220AB O-220AB IRF530 929E-10 IRF530 fairchild

    19n10

    Abstract: 19N10L Mosfet N-Channel 19N10, TO-251 POWER MOSFET Rise Time 261a
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Preliminary Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 19n10 19N10L Mosfet N-Channel 19N10, TO-251 POWER MOSFET Rise Time 261a

    2E12

    Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230


    Original     		PDF JANSR2N7395 FSL130R4 R2N73 2E12 FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET

    Mosfet N-Channel 19N10, TO-251

    Abstract: 19n10l 19N10
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 Mosfet N-Channel 19N10, TO-251 19n10l 19N10

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and


    Original     		PDF 19N10 QW-R502-261

    transistor irf510

    Abstract: irf510 IRF510 MOSFET IRF510 Power Mosfet transistor
    Text: IRF510 Data Sheet November 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET [ /Title IRF51 0 /Subject (5.6A, 100V, 0.540 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark


    Original     		PDF IRF510 IRF51 O220AB IRF510 transistor irf510 IRF510 MOSFET IRF510 Power Mosfet transistor

    2N6782

    Abstract: 2N67 TB334
    Text: [ /Title 2N67 82 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF ) /Creator () /DOCI NFO pdfmark 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET


    Original     		PDF O205AF 2N6782 2N6782 2N67 TB334

    irfp150

    Abstract: No abstract text available
    Text: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,


    Original     		PDF IRFP15 IRFP150 irfp150

    BUZ72A

    Abstract: mosfet .5a 100v
    Text: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ72A O220AB TA17401. BUZ72A mosfet .5a 100v

    Mosfet

    Abstract: SSF1010
    Text: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF1010 O-220 Mosfet SSF1010

    IRFF110

    Abstract: TA17441 TB334
    Text: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 3.5A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF110 IRFF110 TA17441 TB334

    IRFF130

    Abstract: TA17411 TB334
    Text: IRFF130 Data Sheet January 2002 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF130 IRFF130 TA17411 TB334

    Power MOSFETs Application Notes irf520

    Abstract: IRF520 application note irf520 mosfet IRF520 TB334
    Text: IRF520 Data Sheet January 2002 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF520 TA09594. Power MOSFETs Application Notes irf520 IRF520 application note irf520 mosfet IRF520 TB334

    JESD97

    Abstract: STS3C2F100
    Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface


    Original     		PDF STS3C2F100 STS3C2F100 JESD97

    IRFD110

    Abstract: IRFD110 91 TA17441 TB334
    Text: IRFD110 Data Sheet January 2002 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 1A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD110 IRFD110 IRFD110 91 TA17441 TB334