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    MULTI CHIP PACKAGE Search Results

    MULTI CHIP PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    MULTI CHIP PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MULTICHIP PACKAGES National Semiconductor Multi-Chip Packages Original PDF

    MULTI CHIP PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ty9000

    Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
    Text: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous


    Original     		PDF TY9000A000CMGF TY9000A000CMGF 912-bit 256-bit 149-pin P-FBGA149-1013-0 N-29/29 ty9000 TY9000A 1g nand mcp SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp

    ty9000

    Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
    Text: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices


    Original     		PDF TY9000A400BMGF TY9000A400BMGF 912-bit 456-bit 256-bit 149-pin P-FBGA149-1013-0 N-29/29 ty9000 TY9000A ty9000a400 MCP 256M nand toshiba 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba

    ty9000

    Abstract: MCP 256M nand toshiba ty90 TY90009400DMGF toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM P-FBGA149-1013-0
    Text: TY90009400DMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400DMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices


    Original     		PDF TY90009400DMGF TY90009400DMGF 912-bit 456-bit 128-bit 149-pin P-FBGA149-1013-0 N-29/29 ty9000 MCP 256M nand toshiba ty90 toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM

    toshiba NAND ID code

    Abstract: TH50VPN5640EBSB bad block PSEUDO SRAM
    Text: TH50VPN5640EBSB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VPN5640EBSB is a mixed multi-chip package containing a 32-Mbit 33,554,432 bit pseudo static RAM


    Original     		PDF TH50VPN5640EBSB TH50VPN5640EBSB 32-Mbit 64-Mbit 528bytes 16pages 1024blocks. 69-pin toshiba NAND ID code bad block PSEUDO SRAM

    TY9000

    Abstract: MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM TY90009400FMGF
    Text: TY90009400FMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400FMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices


    Original     		PDF TY90009400FMGF TY90009400FMGF 912-bit 456-bit 128-bit 149-pin P-FBGA149-1013-0 N-29/29 TY9000 MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM

    lqfp 64 Shipping Trays

    Abstract: DS310H
    Text: LEADFRAME data sheet Multi-Chip & Stacked-Die Leadframe Packages Features: Multi-Chip Package MCP & Stacked-Die Leadframe Package Amkor's multi-chip package and stacked-die leadframe designs enable package level integration in a low cost, leadframe-based form factor. Leveraging


    Original     		PDF

    PSRAM

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
    Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36L0R8060T1 M36L0R8060B1 M36L0R8060T1: 880Dh M36L0R8060B1: 880Eh 54MHz PSRAM RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA

    2N2222A plastic package

    Abstract: transistor equivalents for 2n2222a NPN transistor 2n2222A plastic package FM362 fighter 2N2222A A1006 LE17 U3158 FM36235
    Text: Multi Chip Arrays High density solutions for power and small signal circuits Multi Chip Arrays Integrated Discrete Components Multi Chip Arrays MCAs integrate several semiconductor die or other components into one package to provide a light and improved-reliability alternative to discrete circuits.


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 A1006 2N2222A plastic package transistor equivalents for 2n2222a NPN transistor 2n2222A plastic package FM362 fighter 2N2222A A1006 LE17 U3158 FM36235

    TYAD00AC00BUGK

    Abstract: SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1
    Text: TYAD00AC00BUGK TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM, Nand E2PROM and Giga Byte Nand E2PROM Mixed Multi-Chip Package DESCRIPTION Lead-Free The TYAD00AC00BUGK is a mixed multi-chip package containing a 1,073,741,824-bit 536,870,912-bit x 2devices


    Original     		PDF TYAD00AC00BUGK TYAD00AC00BUGK 824-bit 912-bit 256-bit 224-pin 001e800 001e810 003d400 SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1

    M69KR096A

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
    Text: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36L0R8060T0 M36L0R8060B0 M36L0R8060T0: 880Dh M36L0R8060B0: 880Eh 54MHz M69KR096A J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0

    nor flash 1.8V

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz nor flash 1.8V PSRAM M36P0R9060E0 M58PR512J

    PSRAM

    Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 TFBGA107 108MHz, 66MHz PSRAM M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ

    M30L0T7000T0

    Abstract: J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000
    Text: M36L0T7050T0 M36L0T7050B0 128Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM


    Original     		PDF M36L0T7050T0 M36L0T7050B0 128Mbit 32Mbit 8Mx16, 2Mx16) M36L0T7050T0: 88C4h M30L0T7000T0 J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000

    TFBGA105

    Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
    Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M39P0R9080E0 TFBGA105 TFBGA105 M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit

    TFBGA105

    Abstract: TFBGA-105 M39P0R9070E0 M58PR512J M65KA128AL
    Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M39P0R9070E0 TFBGA105 TFBGA105 TFBGA-105 M39P0R9070E0 M58PR512J M65KA128AL

    M30L0R8000T

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
    Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 M36LLR8860T1: 880Dh M36LLR8860D1: 880Eh M30L0R8000T RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1

    M69KB096AB

    Abstract: PSRAM M36P0R9060E0 M58PR512J
    Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory


    Original     		PDF M36P0R9060E0 108MHz, 66MHz TFBGA10thout M69KB096AB PSRAM M36P0R9060E0 M58PR512J

    PSRAM

    Abstract: M36P0R9070E0 M58PR512J M69KB128AA
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory


    Original     		PDF M36P0R9070E0 128Mbit TFBGA107 2112-bit 64-bit PSRAM M36P0R9070E0 M58PR512J M69KB128AA

    M58LT128HT

    Abstract: Numonyx M36L0T7050T2 M58LT128HB M58LT128HTB 32-Mbit
    Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multi-Level, Burst Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h 52MHz M58LT128HT Numonyx M36L0T7050T2 M58LT128HB M58LT128HTB 32-Mbit

    TFBGA105

    Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
    Text: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)


    Original     		PDF M39P0R8070E2 M39P0R9070E2 512Mbit TFBGA105 64-bit TFBGA105 KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax

    Untitled

    Abstract: No abstract text available
    Text: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM


    Original     		PDF M36L0R7040T0 M36L0R7040B0 M36L0R7040T0: 88C4h M36L0R7040B0: 88C5h 54MHz

    M36P0R9070E0

    Abstract: M58PR512J M69KB128AB
    Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM


    Original     		PDF M36P0R9070E0 128Mbit TFBGA107 108MHz, 66MHz M36P0R9070E0 M58PR512J M69KB128AB

    8a21

    Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
    Text: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION


    OCR Scan     		PDF F2480/2481 TH50VSF2480/2481AASB 304-bits 216-bits 65-pin P-LFBGA65-1209-0 8a21 ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t

    ba1s

    Abstract: a19t TH50VSF1480AASB TH50VSF1481AASB
    Text: SFP- I TOSHIBA Multi Chip Package SRAM & FLASH Memory 2M BIT SRAM X 8/X 16 16M BIT FLASH ( X 8/ X 16) Data Sheet TOSHIBA TH 50VSF1480/1481A A S B TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE


    OCR Scan     		PDF F1480/1481 TH50VSF1480/1481AASB 152-bit 216-bit 65-pin P-LFBGA65-1209-0 ba1s a19t TH50VSF1480AASB TH50VSF1481AASB