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    Motorola Semiconductor Products MTP12N10L

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    Motorola Semiconductor Products MTP12N10

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    Motorola Semiconductor Products MTP12N10E

    12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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    ComSIT USA MTP12N10E 3,143
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    MTP12N10 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP12N10 Motorola Switchmode Datasheet Scan PDF
    MTP12N10 Motorola European Master Selection Guide 1986 Scan PDF
    MTP12N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP12N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP12N10 Unknown FET Data Book Scan PDF
    MTP12N10E On Semiconductor TMOS E-FET Power Field Effect Transistor Original PDF
    MTP12N10E On Semiconductor 12 Amp TO-220AB, N-Channel, VDSS 100 Original PDF
    MTP12N10E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP12N10E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP12N10E Unknown FET Data Book Scan PDF
    MTP12N10E On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 100V, 6A, Pkg Style TO220AB Scan PDF
    MTP12N10E/D On Semiconductor TMOS POWER FET 12 AMPERES 60 VOLTS Original PDF
    MTP12N10E-D On Semiconductor TMOS E-FET Power Field Effect Transistor N-Channel Original PDF
    MTP12N10L On Semiconductor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MTP12N10L Motorola Switchmode Datasheet Scan PDF
    MTP12N10L Motorola Power Field Effect Transistor Scan PDF
    MTP12N10L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP12N10L Unknown FET Data Book Scan PDF

    MTP12N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTP12N10E

    Abstract: 2N3904 AN569
    Text: MOTOROLA Order this document by MTP12N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high


    Original     		PDF MTP12N10E/D MTP12N10E MTP12N10E/D* MTP12N10E 2N3904 AN569

    Untitled

    Abstract: No abstract text available
    Text: u , L/ nc. ^s.mi-Conducto'i TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP12N08L MTP12N10L Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS


    Original     		PDF MTP12N08L MTP12N10L

    2N3904

    Abstract: AN569 MTP12N10E
    Text: MOTOROLA Order this document by MTP12N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP12N10E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy


    Original     		PDF MTP12N10E/D MTP12N10E MTP12N10E/D* 2N3904 AN569 MTP12N10E

    Untitled

    Abstract: No abstract text available
    Text: J.E.I±E.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTM12N10 *MTP12N10E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES


    Original     		PDF MTM12N10 MTP12N10E O-204) O-220)

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


    Original     		PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    *e13007

    Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    02D2G

    Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original     		PDF MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12

    221D

    Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art


    Original     		PDF MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105

    18004D2

    Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
    Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar


    Original     		PDF MJB18004D2T4 MJB18004D2T4 18004D2 r14525 MJB18004D2T4/D 18004D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package

    221D

    Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES


    Original     		PDF MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUL44

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductort BUL44 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies


    Original     		PDF BUL44 BUL44 r14525 BUL44/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MTP8P10

    Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


    Original     		PDF BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    TRIAC zo 607 MA

    Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
    Text: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’


    Original     		PDF DL137/D May-2000 r14525 TRIAC zo 607 MA ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    221D

    Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF MJE18009/D MJE18009 MJF18009 MJE/MJF18009 E69369 MJE18009/D* 221D MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105

    12n10 die

    Abstract: MTM12N10 snus
    Text: MOTOROLA SC XSTR S/R 14E-D I F D0 1 0 0 5 4 T M O TO R O LA - ? | 3 ? H SEMICONDUCTOR • TEC H N IC A L DATA MTM 12N10 MTP12N08 MTP12N10 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs


    OCR Scan     		PDF 14E-D 12N10 MTP12N08 MTP12N10 JU180CTU 12n10 die MTM12N10 snus

    MTP12N10L

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T R S /R F IM E D I t,3 b ? a S 4 □ 0 ^ 0 2 7 5 7 MOTOROLA - - 3 1 ? | - m SEMICONDUCTOR TECHNICAL DATA MTP12N08L MTP12N10L Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs


    OCR Scan     		PDF Y145M, 21A-04 O-220AB MTP12N10L

    TP12N10

    Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection


    OCR Scan     		PDF MJW16206 MJF16206 AN1040. TP12N10 je210 desaturation design 1200 volt npn MPF930 MTP8P10 MUR8100E ex 3863

    MTP15N06E

    Abstract: MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20N08 MTP20P06 MTP12N05 MTP12N05E MTP12N06
    Text: - f §y £ fr tt € ? Wl ± £ Vd s or Vg s fê Ta=25‘ C Ig s s Pd Id * /CH Vd g W. Vd s (V) (V) (V) (W) (A) (nA) (V) ( M A) MTP12NQ5 MOT N 50 ± 2 0 12 75 MTP12N05E MOT N 50 12 40 MTP12N06 MOT N 60 ± 2 0 12 75 MTP12N08 MOT N 80 ± 2 0 12 75 M T P 12N08L


    OCR Scan     		PDF MTP12N05 O-220AB MTP12N05E T0-220AB MTP12N06 MTP12N08 MTP20N08 MTP15N06E MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20P06