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    MSM5117100 Search Results

    MSM5117100 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM5117100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MSM5117100 OKI Electronic Components 16 Meg x 1-Bit DYNAMIC RAM Scan PDF
    MSM5117100-60JS OKI Electronic Components 16 Meg x 1-bit dynamic RAM Scan PDF
    MSM5117100-60JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-60JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-60JS OKI Semiconductor 16 Meg x 1-Bit DYNAMIC RAM Scan PDF
    MSM5117100-60TK OKI Electronic Components 16 Meg x 1-bit dynamic RAM Scan PDF
    MSM5117100-60TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-60TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-60TK OKI Semiconductor 16 Meg x 1-Bit DYNAMIC RAM Scan PDF
    MSM5117100-60TL OKI Electronic Components 16 Meg x 1-bit dynamic RAM Scan PDF
    MSM5117100-60TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-60TL OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-60TL OKI Semiconductor 16 Meg x 1-Bit DYNAMIC RAM Scan PDF
    MSM5117100-70JS OKI Electronic Components 16 Meg x 1-bit dynamic RAM Scan PDF
    MSM5117100-70JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-70JS OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF
    MSM5117100-70JS OKI Semiconductor 16 Meg x 1-Bit DYNAMIC RAM Scan PDF
    MSM5117100-70TK OKI Electronic Components 16 Meg x 1-bit dynamic RAM Scan PDF
    MSM5117100-70TK OKI Semiconductor 16,777,216-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE Scan PDF

    MSM5117100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MSM5117100

    Abstract: No abstract text available
    Text: DESCRIPTION The MSM5117100 is a 16 Megabit dynamic memory organized as 16,777,216 word by 1 bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology. The device operates at a single + 5 V power supply. AH inputs and outputs are TTL compatible.


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    MSM5117100 MSM5117100 16-Meg 16Mxl 400mil PDF

    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


    Original
    16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445 PDF

    MSM5117100

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM5117100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.


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    MSM5117100_ 216-Word MSM5117100 cycles/32ms A0-A11 L724240 MSM5117100 PDF

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM5117100_ 16,777,216-Word x 1-Bit DYN A M IC R A M : FAST PAG E M O D E TYPE D E S C R IP T IO N The MSM5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.


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    MSM5117100_ 216-Word MSM5117100 cycles/32m 00173S0 MSM5117100 A0-A11 242HD PDF

    7B424

    Abstract: MSM5117100
    Text: O K I Sem iconductor M SM5117100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCR IPTIO N The MSM5117100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.


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    MSM5117100_ 216-Word MSM5117100 cycles/32ms MSM5117100 A0-A11 EM240 7B424 PDF

    m51171

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


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    MSM51V17180 576-Word 18-Bit MSM51V17180 cycles/32ms m51171 PDF

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


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    MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K PDF

    MSM5117180-70

    Abstract: MSM5117180-80
    Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.


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    MSM5117180 576-Word 18-Bit MSM5117180 cycles/32ms MSM5117180-70 MSM5117180-80 PDF

    DRAMs

    Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
    Text: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP


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    MSM511664B-xx MSM514256C-xx MSM514256CL-xx MSM511000C-xx MSM51100CL-xx MSM54V32126 MSM5432126 16-Meg MSM5116160A-xx MSM5116165A-xx DRAMs MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c PDF

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


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    MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750 PDF

    20 TI 54240

    Abstract: MSM51VI6180
    Text: O K I Semiconductor MSM51 V16180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


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    MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 20 TI 54240 PDF

    32-PIN

    Abstract: MSM5116900-70 MSM5116900-80 B724e
    Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.


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    MSM5116900 152-Word MSM5116900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN MSM5116900-70 MSM5116900-80 B724e PDF

    m51171

    Abstract: m32AG M5116
    Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


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    MSM5116180 576-Word 18-Bit MSM5116180 cycles/64ms m51171 m32AG M5116 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 17100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE M ODE TYPE DESCRIPTION The M SM 5117100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 5117100 is OKI's CM OS silicon gate process technology.


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    MSM5117100 216-Word cycles/32m b72424 PDF

    42-PIN

    Abstract: MSM51V16180-70 MSM51V16180-80 V16180 MSM51VI6180
    Text: O K I Semiconductor MSM51V16180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51VI6180 is OKI's CMOS silicon gate process technology.


    OCR Scan
    MSM51V16180 576-Word 18-Bit MSM51V16180 MSM51VI6180 cycles/64ms 42-PIN MSM51V16180-70 MSM51V16180-80 V16180 PDF