Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MRF284 Search Results

    SF Impression Pixel

    MRF284 Price and Stock

    Motorola Semiconductor Products MRF284SR1

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MRF284SR1 1,038
    • 1 $91.7504
    • 10 $91.7504
    • 100 $71.1066
    • 1000 $68.8128
    • 10000 $68.8128
    		Buy Now

    Motorola Semiconductor Products MRF284C

    284C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MRF284C 116
    • 1 $46.8
    • 10 $46.8
    • 100 $39.6
    • 1000 $39.6
    • 10000 $39.6
    		Buy Now

    Motorola Semiconductor Products MRF284R5

    284R5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MRF284R5 45
    • 1 $46.8
    • 10 $46.8
    • 100 $43.2
    • 1000 $43.2
    • 10000 $43.2
    		Buy Now

    MRF284 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF284 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF284 Freescale Semiconductor MRF284LR1, MRF284LSR1 2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF284 Motorola MRF284, MRF284SR1 2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF284 Motorola RF Power Field-Effect Transistors Original PDF
    MRF284 Motorola RF Power Field Effect Transistors Scan PDF
    MRF284LR1 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF284LR1 Freescale Semiconductor 2.0 GHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF284LSR1 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF284LSR1 Freescale Semiconductor 2.0 GHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF284LSR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF284R1 Motorola 2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF284S Motorola RF Power Field-Effect Transistors Original PDF
    MRF284SR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF284SR1 Motorola RF Power Field Effect Transistors Scan PDF

    MRF284 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    369A-10

    Abstract: MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284 MRF284S B6C1
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284S MRF284 DEVICEMRF284/D 369A-10 MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284S B6C1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284

    ATC 100C

    Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284SR1 MRF284R1 ATC 100C CDR33BX104AKWS MRF284SR1 C10 PH mallory 150 series

    MRF284

    Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284 wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH

    C10 PH

    Abstract: 56-590-65-3B 369A-10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284SR1 C10 PH 56-590-65-3B 369A-10

    K 3569 7.G equivalent

    Abstract: 369A-10 CDR33BX104AKWS MRF284R1 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284LSR1 MRF284R1 K 3569 7.G equivalent 369A-10 CDR33BX104AKWS 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B

    MRF284

    Abstract: No abstract text available
    Text: <z/V.e.txr ZPioauati, {Jna. tj 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Advance Information The RF Sub-Micron MOSFET Line MRF284S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs


    Original     		PDF MRF284S MRF284

    369A-10

    Abstract: C10 PH dale 2000 2x12 mallory capacitor 1500 mf
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D 369A-10 C10 PH dale 2000 2x12 mallory capacitor 1500 mf

    mrf284

    Abstract: C10 PH
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 MRF284/D C10 PH

    RE60G1R00

    Abstract: RM73B2B682JT RM73B2B152JT SME50VB 56590653B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284R1 MRF284LSR1 RE60G1R00 RM73B2B682JT RM73B2B152JT SME50VB 56590653B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284LR1 MRF284LSR1 MRF284/D

    SMD P1

    Abstract: PCC150CCT PCB00050 MRF284L NONLINEAR MODEL LDMOS
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library MRF284LR1 MRF284LSR1 US CDMA RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF284LR1 MRF284LSR1 SMD P1 PCC150CCT PCB00050 MRF284L NONLINEAR MODEL LDMOS

    marking amplifier j02

    Abstract: CDR33BX104AKWS MRF284 MRF284LR1 MRF284LSR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LR1 MRF284LSR1 MRF284LR1 marking amplifier j02 CDR33BX104AKWS MRF284 MRF284LSR1

    MRF284

    Abstract: CDR33BX104AKWS MRF284LR1 MRF284LSR1
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF284LR1 MRF284LSR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF284/D MRF284LR1 MRF284LSR1 20ctive MRF284LR1 MRF284 CDR33BX104AKWS MRF284LSR1

    ferroxcube for ferrite beads

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF284/D MRF284R1 MRF284LSR1 MRF284/D ferroxcube for ferrite beads

    johanson

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284LSR1 MRF284LR1 johanson

    100B102JT50XT

    Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
    Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio


    Original     		PDF MRF284LR1 MRF284 100B102JT50XT 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor

    MOSFET marking Z5

    Abstract: 56590653B z14 b marking Freescale MARKING W3
    Text: Document Number: MRF284 Rev. 18, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF284LSR1 Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284 MRF284LSR1 MOSFET marking Z5 56590653B z14 b marking Freescale MARKING W3

    sme50vb101m12x25l

    Abstract: C10 PH wirewound resistor j10 NI-360
    Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    Original     		PDF MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D sme50vb101m12x25l C10 PH wirewound resistor j10 NI-360

    F1 J37

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF284 MRF284S The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 30 W, 2000 MHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for PCN and PCS base station applications at frequencies from


    OCR Scan     		PDF Imp954 3b7255 MRF284 MRF284S F1 J37

    capacitor variable

    Abstract: mj031 MJD32 MOTOROLA MRF284 SME50VB101 369A-10 variable capacitor CDR33BX104AKWS MRF284SR1 56-590-65-3B
    Text: MOTOROLA O rder this docum ent by M RF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF284 MRF284SR1 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from


    OCR Scan     		PDF MRF284/D MRF284/D capacitor variable mj031 MJD32 MOTOROLA MRF284 SME50VB101 369A-10 variable capacitor CDR33BX104AKWS MRF284SR1 56-590-65-3B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF284 MRF284S The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    OCR Scan     		PDF IS21I IS12I MRF284 MRF284S