Epitaxial Diode FRED VRRM 1200 V 40 ns
Abstract: 2X161-12P diode 29
Text: DSEI 2x161-12P IFAVM = 2x128 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED ECO-PAC 2 Preliminary Data Sheet VRRM V V 1200 1200 A C -1 IK -10 LN -9 V X -18 Typ DSEI 2x161-12P Symbol Conditions IFRMS TVJ = TVJM 270 A IFAVM * TC = 70°C; rectangular; d = 0.5
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2x161-12P
2x128
Epitaxial Diode FRED VRRM 1200 V 40 ns
2X161-12P
diode 29
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Untitled
Abstract: No abstract text available
Text: Stranded Loose Tube MPC Cable, Corrugated Steel Armouring, A-DQ ZN (SR)H 2x12 G50/125 CC (OM2) 219.9868 Corning Cable Systems MPC (Multi Purpose Cable) Stranded Loose Tube Cables are flame retardant, indoor/ outdoor and designed for interbuilding / intrabuilding
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G50/125
FWLT01-S0024-G007
2x12G50/125
FWLT01-S0024-G007
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SCB865600
Abstract: SCB941600
Text: S/BIP/SCB941600/A/04/07/2002 page 1 / 3 F/GB Relais Statique Double Double Solid State Relay SCB941600 8-30 VDC control 2x12A/230VAC output • Sortie AC synchrone : 12-280Vac-12A x 2 . • Deux Commande pour 2 voies. • Connexion de Puissance et de Commande par vis.
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S/BIP/SCB941600/A/04/07/2002
SCB941600
2x12A/230VAC
12-280Vac-12A
1K470
12-280VAC
Ca-0165012-1
SCB865600
SCB941600
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EDI2AG272129V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2AG272129V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst
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EDI2AG272129V
2x128Kx72,
2x128Kx72
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
s129V
EDI2AG272129V85D1*
EDI2AG272129V9D1*
EDI2AG272129V10D1
EDI2AG272129V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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ddr2 module ecc 128M 72
Abstract: PC2-3200 PC2-4300 PC2-5300 PC2-6400 W3HG2128M72ACER-AD6
Text: White Electronic Designs W3HG2128M72ACER-AD6 PRELIMINARY* 2GB – 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP FEATURES DESCRIPTION 240-pin, dual in-line very low profile VLP memory module The W3HG2128M72ACER is a 2x128Mx72 Double Data Rate DDR2 SDRAM high density module based on DDR2
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W3HG2128M72ACER-AD6
2x128Mx72
240-pin,
W3HG2128M72ACER
256Mx4
240-pin
PC2-6400*
PC2-5300*
PC2-4300
ddr2 module ecc 128M 72
PC2-3200
PC2-5300
PC2-6400
W3HG2128M72ACER-AD6
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DM marking code
Abstract: DDR200 DDR266 DDR333 W3EG64255S-JD3
Text: White Electronic Designs W3EG64255S-JD3 ADVANCED* 2GB – 2x128Mx64 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG64255S is a 2x128Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 256Mx4
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W3EG64255S-JD3
2x128Mx64
W3EG64255S
512Mb
256Mx4
DDR200,
DDR266
DDR333;
DM marking code
DDR200
DDR333
W3EG64255S-JD3
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EDI2AG272129V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: White Electronic Designs EDI2AG272129V ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM DESCRIPTION FEATURES The EDI2AG272129VxxD1 is a Synchronous/ Synchronous Burst SRAM, 72 position SO DIMM 144 contacts Module, organized as 2x128Kx72. The Module
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EDI2AG272129V
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
2x128K
EDI2AG272129V85D1*
2x128Kx72
EDI2AG272129V9D1*
EDI2AG272129V10D1
EDI2AG272129V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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MAX98400
Abstract: No abstract text available
Text: 19-5505; Rev 0; 9/10 MAX98400B Evaluation Kit The MAX98400B evaluation kit EV kit configures the MAX98400B Class D amplifier to drive 2x12W into a pair of 8I speakers in stereo mode for audio applications. The EV kit operates from an 8V to 28V DC power supply.
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MAX98400B
2x12W
MAX98400BETG+
MAX98400B
MAX98400
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Untitled
Abstract: No abstract text available
Text: EA LG170X62-A 4.2003 LED-LEUCHTKÖRPER 2x12 LEDs 166 x 58mm LEUCHTFLÄCHE , en h c bli en ü zu ektiv s t ß D fl pa rans m LC t m 50 alle Masse in mm TECHNISCHE DATEN * LIGHTBOX * 2x36=72 LEDs * LEUCHTFARBE GELB/GRÜN Absolute Maximum Ratings Ta = 25°C
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LG170X62-A
3600uA
540mA)
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Untitled
Abstract: No abstract text available
Text: -* IF RED J 5 PROOUCT NO SIZE DIM L 66900-X10 2X5 .680/17.27 .520/13.21 .400/10.16 -X 14 2X7 .880/22.35 .720/18.29 -X 16 2X8 .980/24.89 .820/20.83 -X20 2X 10 1.180/29.97 -X24 2X12 1.380/35.05 DIM S DIM C -OXX THRU DUAL entry DUAL POL. .700/17.78 - 1XX THRU
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66900-X10
66900-X60
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PDF
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG2128M72AFSR-D3 -AD3 ADVANCED* 2GB – 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA FEATURES DESCRIPTION Double-data-rate architecture The W3EG2128M72AFSR is a 2x128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR
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W3EG2128M72AFSR-D3
2x128Mx72
W3EG2128M72AFSR
512Mb
128Mx4
DDR266
DDR333
DDR200
333Mb/s,
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Untitled
Abstract: No abstract text available
Text: □IXYS DSS 2x121-0045B Power Schottky Rectifier lFAV = 2x120 A V rrm - 45 V VF = 0.59 V Prelim inary Data RSM V V 45 45 Symbol U miniBLOC, SOT-227 B Type RRM DSS 2x121-0045B Test Conditions Maximum Ratings 150 120 240 rms U avm U avm Tc = 100°C; rectangular, d = 0.5
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2x121-0045B
2x120
OT-227
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Untitled
Abstract: No abstract text available
Text: Protistor DCProtistor fuses DC fuses DC Square-body Fuses Sizes 2x122 - 2x123 gR 750V DC Size 2x123 gRC-gRB-gRD from 1000 to 1600 A Dimensions Weight: 4190 g Main Characteristics Size Current rating IN A Breaking Capacity Max. I2t Watts loss @ 900 V = L/R 40 ms
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2x122
2x123
D2123GC75V10CTF
D2123GB75V12CTF
D2122GB75V14CTF
D123GD75V1500TF
220tage
SCDC31
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tfk 19
Abstract: 2x121 TFK S 1 86 P
Text: N O IE S : U N LESS OTHERWISE SPECIFIED; C A T A L O G N U M B E R D E S C RIPTIO N C B H 2X121S C - V CONNECTOR SERIES C A RD ED G E t B1-% 9 .5 0 Í0 .2 5 .3 7 4 1 .0 1 0 2.835 1.850 7 3 C ON TA C T PAIRS 48 C ON TA C T PAIRS B I -L E V E L CONTACTS J '
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2X121S
C8H2X121
SE96416
tfk 19
2x121
TFK S 1 86 P
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2X20
Abstract: 2X12
Text: PRODUCT NO POS DIM X 94271-X04 2X2 2 4 X06 2X3 4 6 DIM Y X08 2X4 6 8 X10 2X5 8 10 X12 2X6 10 12 X14 2X7 12 14 X16 2X8 14 16 X18 2X9 16 18 X20 2X10 18 20 X22 2X11 20 22 X24 2X12 22 24 X26 2X13 24 26 X28 2X14 26 28 X30 2X15 28 30 X32 2X16 30 32 X34 2X17 32 34
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94271-X04
240CT94
2X20
2X12
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aa11
Abstract: 14mmx20mm GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2CG272128V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2CG272128VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, small outline. The Module contains four (4) Synchronous Burst Ram Devices,
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EDI2CG272128V
2x128Kx72,
2x128Kx72
EDI2CG272128VxxD1
positi08)
EDI2CG272128V85D1*
EDI2CG272128V9D1*
EDI2CG272128V12D1
EDI2CG272128V15D1
aa11
14mmx20mm
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG2128M64ETSR-JD3 ADVANCED* 2GB – 2x128Mx64 DDR SDRAM REGISTERED w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG2128M64ETSR is a 2x128Mx64 Double Data Rate SDRAM memory module based on1Gb DDR SDRAM component. The module consists of sixteen 128Mx8 DDR
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W3EG2128M64ETSR-JD3
2x128Mx64
133MHz
166MHz
166MHz)
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SIL-13P
Abstract: 2x12W
Text: 5 S T A N D -B Y = != « .O , _ Ä POWER AMPLIFIER 2 x 1 2W V cc m = 18V VûC TTP = 14,4V VCC RNG = 6 .18V 68Û c=H H 2k 1DD,0 = L t \ L _ 22 j l TDH =10% + ^ 1 PO = 2x12W R l =2 Ohm 1 U S D-BY f V ft • -! m , n 1+ 4 Ji— 1 Icco rr? = 75mA Icco m a x = 120mA
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2x12W
120mA
SIL13P
SIL-13P
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PC2-6400
Abstract: No abstract text available
Text: NT2GTT64U88B0UN / NT2GTT64U88B0RN 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on 2x128Mx8 Stacking DDR2 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 256Mx64 Unbuffered DDR2 SO-DIMM based on 2 ranks of
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NT2GTT64U88B0UN
NT2GTT64U88B0RN
PC2-4200/PC2-5300/PC26400
2x128Mx8
200-Pin
256Mx64
128Mx8
PC2-4200
PC2-5300
PC2-6400
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI2A G272128V 2 Megabyte Sync/Sync Burs t Small Outline DIMM •ELECTRONIC DESISM5, INC 2x128Kx7Z 3.3V Sync/Sync Burst Flow-Through Module Features • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272128VxxD1 is a Synchronous/Synchro • Flow-Through Architecture
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G272128V
2x128Kx7Z
EDI2AG272128VxxD1
2x128Kx72.
14mmx20mm
C272128V
2AG27
2128V85D1*
72128V
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI2CG272128V 2 Megabyte Sync/Sync Burst, Sm all Outline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x128Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x128Kx72 Synchronous, Synchronous Burst The EDI2CG272128VxxD1 is a Synchronous/Synchro Flow-Through Architecture
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EDI2CG272128V
2x128Kx72,
2x128Kx72
EDI2CG272128VxxD1
14mmx20mm
EDI2CG272128V10D1
2x128Kx72
EDI2CG272128V12D1
EDI2CG272128V
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Untitled
Abstract: No abstract text available
Text: DSS 2x121-0045B IFAV = 2x120 A VRRM = 45 V VF = 0.59 V Power Schottky Rectifier VRSM VRRM V V 45 45 miniBLOC, SOT-227 B Type DSS 2x121-0045B Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5 TC = 100°C; rectangular, d = 0.5; per device
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2x121-0045B
2x120
OT-227
DSS2x121-0045B
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PM5354
Abstract: GR-253-CORE PM5397 XBAR 155-MBIT/S
Text: PM5354 S/UNI MULTI 2x12 Released Multi-rate SATURN User Network Interface for 2x622 and 4x155 • • • • BLOCK DIAGRAM SYSCLK TTOH[4:1] TTOHEN[4:1] TTOHFP[4:1] TTOHCLK[4:1] • LINE_IF Transmit Section Trace Processor 4 TXD_P/N[4:1] Transmit Analog
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PM5354
2x622
4x155
STS-12
32-bit
PMC-2021540
PM5354
GR-253-CORE
PM5397
XBAR
155-MBIT/S
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Untitled
Abstract: No abstract text available
Text: WD\ EDI2A C272129V 2 Megabyte Sync/Sync Burs t Small Outline DIMM •ELEC TR O N IC DE5IS N 5, IN C ADVANCED 2x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchro
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C272129V
2x128Kx72t
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
2129V85D1
EDI2CG472256V9D1
2256VI
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