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    100B100JT500XT Search Results

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    100B100JT500XT Price and Stock

    Kyocera AVX Components 100B100JT500XT1K

    CAP CER 10PF 500V P90 1111
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    DigiKey 100B100JT500XT1K Reel 3,000 500
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    100B100JT500XT1K Cut Tape 482 1
    • 1 $6.14
    • 10 $5.321
    • 100 $4.1479
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    100B100JT500XT1K Digi-Reel 1
    • 1 $6.14
    • 10 $5.321
    • 100 $4.1479
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    Mouser Electronics 100B100JT500XT1K 1,126
    • 1 $5.34
    • 10 $4.57
    • 100 $3.43
    • 1000 $2.76
    • 10000 $2.7
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    Kyocera AVX Components 100B100JT500XT

    Silicon RF Capacitors / Thin Film 500volts 10pF 5%
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    Mouser Electronics 100B100JT500XT 2,003
    • 1 $5.5
    • 10 $4.73
    • 100 $3.55
    • 1000 $2.85
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    Bristol Electronics 100B100JT500XT 910
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    Richardson RFPD 100B100JT500XT 500 500
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    Kyocera AVX Components 100B100JT500XTV1K

    Silicon RF Capacitors / Thin Film 500V 10pF Tol 5% Las Mkg Vertical
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    Mouser Electronics 100B100JT500XTV1K
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    Richardson RFPD 100B100JT500XTV1K 1,000
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    Kyocera AVX Components 100B100JT500XTV

    Silicon RF Capacitors / Thin Film 500V 10pF Tol 5% Las Mkg Vertical
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    Mouser Electronics 100B100JT500XTV
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    TTI 100B100JT500XTV Reel 500
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    American Technical Ceramics Corp 100B100JT500XT

    Cap Ceramic 10pF 500V +90±30ppm/C 5% Pad SMD 175°C Low ESR T/R
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    Verical 100B100JT500XT 500 500
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    100B100JT500XT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B100JT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 500V P90 1111 Original PDF
    100B100JT500XT1K American Technical Ceramics Ceramic Capacitor 10PF 500V P90 1111 Original PDF

    100B100JT500XT Datasheets Context Search

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    ATC600S3R3BT250XT

    Abstract: ON SEMICONDUCTOR J122
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT ON SEMICONDUCTOR J122

    ATC600S3R3BT250XT

    Abstract: MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT MW7IC008N A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N ATC600S3R3BT250XT MW7IC008NT1 Test Circuit Component Layout ATC600S2R MW7IC008NT1 AN1987 3843 GRM3195C1E103JA01 ATC600S2R2CT250XT A115

    100B102JT50XT

    Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
    Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio


    Original     		PDF MRF284LR1 MRF284 100B102JT50XT 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2.1, 3/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original     		PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940N

    ATC600S3R3BT250XT

    Abstract: J376 MW7IC008 vgls
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage


    Original     		PDF MW7IC008N MW7IC008NT1 ATC600S3R3BT250XT J376 MW7IC008 vgls

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 3, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N

    MW7IC008N

    Abstract: MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 2, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage


    Original     		PDF MW7IC008N MW7IC008NT1 MW7IC008N MW7IC008NT1 AN1955 AN1977 AN1987 0603HC-1N6XJLW L7150 ATC600S3R3BT250XT J3234