r04c
Abstract: 1N3909 1N3910 1N3911 1N3912 1N3913 1N4723 MR1396 1N4Q01 43fl
Text: MOTOROLA SC DIODES/OPTO bHE L,3b7255 00flt,23L, 75*1 D 1N3909 thru 1N3913 MR1396 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N3911 and M R1396 are Motorola Preferred Devices Designers Data Sheet FAST R E C O V E R Y POWER R E C T IF IE R S S TU D M O U N T E D
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3b7255
00flt
1N3909
1N3913
MR1396
1N3911
MR1396
r04c
1N3910
1N3912
1N4723
1N4Q01
43fl
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MCR202
Abstract: mcr204 MCR203 MCR206
Text: MOTOROLA SC DIODÉS/ÔPTO 25E D t.3b7255 OOÖ1137 2 • •r-^ s'-// MCR202 thru MCR206 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for industrial/military applications such as relay and lamp drivers, small motor controllers and drivers for larger thyristors, and in
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3b72SS
MCR202
MCR206
O-206AA)
MCR202
b3b72SS
mcr204
MCR203
MCR206
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MRF8003
Abstract: No abstract text available
Text: ^34 MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC DE |t.3b7255 00300=17 <D I O D E S / O P T O 34C 38 0 9 7 D T~3t~i2 SILICON RF TRANSISTOR DICE continued) MRFC8003 DIE NO. — NPN LINE SOURCE — RF502.147 lü This die provides performance equal to or better than that of
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3b7255
RF502
MRF8003
MRFC8003
MRF8003
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ur420
Abstract: MUR430 MUR405 MUR410 MUR415 MUR420 MUR440 MUR450 MUR460 JVR 0.7
Text: MOTOROLA SC D I O D E S / O P T O t>3b7255 QOfibHb? Ib4 L.4E D MUR405 MUR410 MUR415 MUR420 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MUR430 MUR440 MUR450 MUR460 MUR420, MUR440 and MUR460 are Motorola Preferred Devices •— w -ULTRAFAST RECTIFIERS
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2N3640
Abstract: MPS4258 2N5228 2n3639 MPS3640 2n4208 2N4209 2N36 2N4209 die transistor 2N3640
Text: MOTORO LA SC {D IO DES/ OPT O} 6367255 MOTOROLA 34 SC DE | L.3b7255 0Q3Ô QD7 5 | ~ CDIODES/OPTO 34C 3800 7 D T~ 3 7 “/ST SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) MMC4209 DIE NO. — PNP LINE SOURCE — DSL345 f4 This die provides performance similar to that of the following device types:
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3b7255
DSL345
MMC4209
2N3639*
2N3640*
2N4208
2N4209
2N5228*
2N5771
MM4208
2N3640
MPS4258
2N5228
2n3639
MPS3640
2N36
2N4209 die
transistor 2N3640
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SC D I O D E S / O P T O I M0T7 L.3b7255 0 0 0 7 3^ 5 G3S bflE » Order this data sheet by BAV199LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information D ual S e rie s S w itc h in g D iode BAV199LT1 Motorola Preferred Device This switching diode has the following features:
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3b7255
BAV199LT1/D
BAV199LT1
BAV199LT1
BAV199LT3
inch/10
OT-23
O-236AB)
2PHX33713F-0
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2N6094
Abstract: No abstract text available
Text: MOTOROLA ! SC {DIODES/OPTO} 6367255 MOTOROLA SC 3M D ET|t.3b7255 DIODES/OPTO 34C 0030073 38073 SILICON RF TRANSISTOR DICE (continued) 7 T *- ? ? - W 2C6094 DIE NO. — PNP LINE SOURCE — RF605.323 This die provides performance equal to or better than that of
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3b7255
RF605
2N6094
2C6094
2N6094
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with
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MBR320/D
MBR320
MBR330
MBR340
MBR350
MBR360
MBR340
MBR360
b3b72Â
MBR320
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5211DW1T1 SERIES Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1
MUN5211DW1T1
T-363
b3b72SS
MUN5215DW1T1
3b7255
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MCR264-12
Abstract: photo thyristor MCR264-2 MCR264-10 MCR264-3 MCR264-4 MCR264-6 MCR264-8 MCR264 motorola opto scr
Text: "□1 MOTOROLA SC iD IO DES/OPTO} ÏF|h3h7ESS 0071174 T T - * - s r - t 7 M C R 264-2 thru T h y risto rs M C R 26 4-12 Silico n Controlled Rectifiers . . . designed for back-to-back SCR output devices for solid state relays or applica tions requiring high surge operation.
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MCR264-2
MCR264-12
MCR264-2
MCR264-3
MCR264-4
MCR264-6
MCR264-8
MCR264-10
MCR264-12
photo thyristor
MCR264
motorola opto scr
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T6411M
Abstract: T6411D
Text: HÌ M O T O R O L A SC -CDIODES/OPTOJ 6367255 MOT OR OL A SC DIODES/OPTO t.3L,7E5S OGT^aSS T | ~ OtE 79255 T riacs Silico n Bidirectional Triode Thyristors . . . designed prim arily fo r industrial and m ilitary applications fo r full w ave control o f ac loads in applications such as light dim m ers, pow er supplies, heating controls,
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T6401
T6411
T6421
T6401B,
T6411B,
T6421B
T6401D,
T6411D,
T6421D
T6401M,
T6411M
T6411D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilic o n Tuning D iode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical
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MMBV3102LT1/D
MMBV3102LT1
OT-23
O-236AB)
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MAC3060-4
Abstract: MAC3060/D
Text: MOTOROLA SC DIODES/OPTO 0 e! D • TRIACs (□3b7255 007723b b ■ t - 25-/5 - Chipscrete Subassemblies Optically Isolated Triac Driver/Triac Combinations This series of Triac Drivers consists of infrared LEDs op tically coupled to photodetectors with Triac output. 7500 V
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3b7255
007723b
O-220
CT6343A
CT6347AÃ
CT15-6
CT15A6Ã
CT223-6
CT223A6Ã
CT6344A
MAC3060-4
MAC3060/D
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MV2107
Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.
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MV21XX
MMBV21XXLT1
1MV21
40Vdc
n/MV2109
MV2107
MV2105* equivalent
MMBV2109LT1 equivalent
4j diode
MV2113
diode mv2105
MMBV2101LT1
MMBV2104
MV2103
MMBV2103LT1
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MR818 diode
Abstract: Diode MR810 MR818 diodes IN4723 MR818 equivalent MR814 MR810 MR816 MR812 MRB17
Text: MOTOROLA SC -CDIODES/ÔPTO} 1 EE D I b 3 b ? 2 SS O t m T C ia T | - — ÎT-03-/3 MR810 thru MR814 MR816 thru MR818 MOTOROLA SEMICONDUCTOR TECHNICAL DATA l osi«Ti M‘s I)n(n Sheol FAST RECOVERY POWER RECTIFIERS SUBMINIATURE SIZE, A XIA L LEAD MOUNTED
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T-03-/3
MR810
MR814
MR816
MR818
1-41x
MR818 diode
Diode MR810
MR818
diodes IN4723
MR818 equivalent
MR812
MRB17
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BT4401LT1
Abstract: bt4401
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Sw itching Transistor MMBT4401LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit v CEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage vebo 6.0 Vdc
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MMBT4401LT1
O-236AB)
3b7255
BT4401LT1
bt4401
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DD201
Abstract: 74HC374 Logic Package Information
Text: MOTOROLA SC LOGIC SEE MOTOROLA J> fc»3b7255 0 0 0 0 3 ^ 3 wm SEMICONDUCTOR 40fl IH0T4 'T -q t-o 7-11 TECHNICAL DATA MC54/74HC374 Octal 3-S tate Noninverting D Flip-Flop J SUFFIX CERAMIC CASE 732-03 |f High-Performance Silicon-Gate CMOS The MC54/74HC374 is identical in pinout to the LS374. The device inputs are
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3b7255
MC54/74HC374
MC54/74HC374
LS374.
HC374
DD201
74HC374 Logic Package Information
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R esistor Transistor M UN 2211T1 S E R IE S NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola Preferred D e vices This new series of digital transistors is designed to replace a single device and its
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2211T1
SC-59
MUN2211T1
b3b7255
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T6411D
Abstract: T6411M T6421N T6421 T6421M T6421B T6411B T6421D T6401B WT6401
Text: ~ol MOTOROLA SC iDIODES/OPTO} 6367255 MOTOROLA SC DIODES/OPTO DE | b3t75SS 007^255 T (~~ 0 tE 79255 T ria c s Silico n Bidirectional Triode Thyristors . designed primarily for industrial and military applications for full wave control of ac loads in applications such as light dimmers, power supplies, heating controls,
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T6401B,
T6411B,
T6421B
T6401D,
T6411D,
T6421D
T6401M,
T6411M,
T6421M
T6401N,
T6411D
T6411M
T6421N
T6421
T6411B
T6401B
WT6401
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74HC03
Abstract: No abstract text available
Text: MOTOROLA SC LOGIC MOTOROLA • I SEE D b3b?SSS DOfiflOTi »nom SEMICONDUCTOR TECHNICAL DATA MC54/74HC03 Quad 2 -In p u t N A N D G ate w ith O pen-Drain O utputs J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate C M O S The MC54/74HC03 is identical in pinout to the LS03. The device inputs are com
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MC54/74HC03
MC54/74HC03
b3b7252
74HC03
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b2535
Abstract: b2545 b2535 diode U4T DIODE Motorola b2545 2535c B2545 M BR2545CT
Text: MOTOROLA Order this document by MBR2535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2535CT MBR2545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBR2535CT/D
B2535,
B2545
MBR2535CT
MBR2545CT
MBR2545CT
-220A
b3b7255
b2535
b2535 diode
U4T DIODE
Motorola b2545
2535c
B2545 M
BR2545CT
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M 14606
Abstract: BZV55C6V1 MLL5221B mlu714 BZV55C4V3
Text: MOTOROLA sc DIODES/OPTO b4E » • b3L7ESS 00 8 54 37 S3T SECTION 4.2.4 DATA SHEETS ZËNER VOLTAGE REGULATOR DIODES — continued Section 4 .2 A 2 Surface Mounted — continued SECTION 4.2A 2.2 500 mW LEADLESS (DO-34 BODY SIZE) MULTIPLE PACKAGE QUANTITY (MPQ)
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DO-34
DCWUCT10M
UUC291S
M 14606
BZV55C6V1
MLL5221B
mlu714
BZV55C4V3
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA Order this document by MBR20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Dual Schottky Rectifier MBR20200CT . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power
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MBR20200CT/D
MBR20200CT
3b7255
-220AB)
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2N6169
Abstract: 2n6168 2N6170 2N6167 MOTOROLA 2N6170
Text: MOTOROLA SC D IO D E S / O P T O 3 TE D ES b 3 b 7 S S S □0 fl2 bcm b H IM O T 7 T '- IG 'i g 2 N 6167 thru S ilic o n C o n tro lle d R e ctifiers 2 N 6170 Reverse B l o c k i n g Triode T h yr is to r s . . . designed for industrial and consumer applications such as power supplies;
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2N6167
2N6170
2N6167
2N6168
2N6169
2N6170
MOTOROLA 2N6170
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