Untitled
Abstract: No abstract text available
Text: MRA1720-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.5m @V(CBO) (V) (Test Condition)28
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MRA1720-2
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Untitled
Abstract: No abstract text available
Text: MRA1720-20 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50â V(BR)CBO (V) I(C) Max. (A)8.0 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)4.0m @V(CBO) (V) (Test Condition)28
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MRA1720-20
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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BLV97CE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171
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BLV97CE
OT171
BLV97CE
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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Y22 SOT23
Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor
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PMBTH10
PMBTH10
PMBTH81.
MSB003
Y22 SOT23
MSB003
g21 Transistor
B22 base
PMBTH81
transistor b11
switching transistor
y11 transistor
transistor G11
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RBA14
Abstract: rba9 8086 convertion from decimal to binary program R4F2114 RPB-6 a20636 transistor DA3 309 Nippon capacitors as11 ds hfe nv sar1 2a 1215
Text: REJ09B0098-0200Z The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2114Group Hardware Manual
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REJ09B0098-0200Z
H8S/2114Group
16-Bit
H8S/2100
H8S/2114
R4F2114
D-85622
H8S/2114
RBA14
rba9
8086 convertion from decimal to binary program
R4F2114
RPB-6
a20636
transistor DA3 309
Nippon capacitors
as11 ds hfe nv
sar1 2a 1215
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ir receiver module sj 1838
Abstract: kbu 810 g rba9 Nippon capacitors 665a
Text: H8S/2114 Group 16 Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2114 Rev.1.00 2003.10.31 R4F2114 Rev. 1.00, 10/03, page ii of xlii Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products
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H8S/2114
16-Bit
H8S/2100
R4F2114
REJ09B0098-0100Z
ADE-602-308)
ir receiver module sj 1838
kbu 810 g
rba9
Nippon capacitors
665a
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KBU08
Abstract: ir receiver module sj 1838 rba9 h0075 8155 port ir receiver sj 1838 Nippon capacitors as11 ds hfe nv
Text: REJ09B0098-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2114RGroup Hardware Manual
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REJ09B0098-0300
H8S/2114RGroup
16-Bit
H8S/2100
H8S/2114R
R4F2114R
Unit2607
H8S/2114R
KBU08
ir receiver module sj 1838
rba9
h0075
8155 port
ir receiver sj 1838
Nippon capacitors
as11 ds hfe nv
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REJ10B0026
Abstract: kbcc 225 RBA14 rba9 Bt 2313 MRA250 mat735 8155 port Nippon capacitors H1520
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2114R
REJ09B0098-0300
REJ10B0026
kbcc 225
RBA14
rba9
Bt 2313
MRA250
mat735
8155 port
Nippon capacitors
H1520
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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MRA1720-9
Abstract: mra1720 LT 7202 mral1720-2 MRAL1720-20 MRAL1720
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R A L1720 Series The RF Line M ic ro w a v e P o w e r T ra n sisto rs 6 to 7.5 dB 1.7-2 GHz 2 TO 20 WATTS BROADBAND MICROWAVE POWER TRANSISTORS . . . designed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in
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L1720
RA11720
MRA1720-9
mra1720
LT 7202
mral1720-2
MRAL1720-20
MRAL1720
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
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MRA1720
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R A 1720 Series The RF Line Microwave Power Transistors . . designed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in th e 1.7 to 2 GHz fre q u en cy range. 6 to 7.5 dB
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10Opf
MRA1720
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