MOTOROLA RF POWER Search Results

MOTOROLA RF POWER Result Highlights (5)

Part	Manufacturer	Description
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30
TPD4163K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30
TPD4163F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31
TPD4207F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

MOTOROLA RF POWER Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CA2820 TRW Abstract: ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022 Text: Order this document by AN1022/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1022 MECHANICAL AND THERMAL CONSIDERATIONS IN USING RF LINEAR HYBRID AMPLIFIERS Prepared by: Don Feeney Motorola RF Devices ABSTRACT Motorola’s thin film hybrid amplifiers are medium power	Original	AN1022/D AN1022 CA2820 TRW ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022	PDF
HP RF TRANSISTOR GUIDE Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS	Original	SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor	PDF
Motorola transistors MRF646 Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860 Text: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today	Original	SG46/D Motorola transistors MRF646 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860	PDF
940 629 MOTOROLA Abstract: HDR2X10 DB4140 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 921 MHz - 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations, uses Motorola’s newest High Voltage 26 Volts LDMOS IC technology, and	Original	MHVIC910HR2 940 629 MOTOROLA HDR2X10 DB4140	PDF
08055C103KAT Abstract: No abstract text available Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High	Original	MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 08055C103KAT	PDF
TO272 Abstract: 03B3 1206 cms diode 100B100JCA500X A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 TAJE226M035R Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High	Original	MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 TO272 03B3 1206 cms diode 100B100JCA500X A113 MW4IC915GMBR1 MW4IC915MB TAJE226M035R	PDF
1206 cms diode Abstract: 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB MW4IC915MBR1 RF35 1206 cms Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High	Original	MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 1206 cms diode 08055C103KAT A113 MW4IC915GMBR1 MW4IC915MB RF35 1206 cms	PDF
MRF156R Abstract: MRF156 Arco 469 ceramic capacitor Text: MOTOROLA Order this document by MRF156/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-Effect Transistors Motorola Preferred Device N–Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.	Original	MRF156/D MRF156 MRF156R MRF156 MRF156/D* MRF156R Arco 469 ceramic capacitor	PDF
C12R1 Abstract: No abstract text available Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to	Original	MWIC930/D MWIC930 MWIC930R1 MWIC930GR1 C12R1	PDF
TO272 Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3 Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to	Original	MWIC930/D MWIC930R1 MWIC930GR1 MWIC930 MWIC930R1 TO272 RM73B2BT A113 GRM42 MWIC930GR1 2XE3	PDF
transistor 6c x Abstract: MRF9060 MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060S MRF9060SR1 Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs	Original	MRF9060 MRF9060S MRF9060Sal MRF9060 MRF9060S MRF9060SR1 RDMRF9060NCDMA transistor 6c x MRF9060 equivalent MOTOROLA transistor 413 BC857 LP2951 MRF9060SR1	PDF
GM 950 motorola Abstract: ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915 MHVIC915R2 Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26	Original	MHVIC915R2/D MHVIC915R2 MHVIC915R2 GM 950 motorola ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915	PDF
J361 IC Abstract: No abstract text available Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26	Original	MHVIC915R2/D MHVIC915R2 J361 IC	PDF
J595 Abstract: J673 J361 Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26	Original	MHVIC915R2/D MHVIC915R2 J595 J673 J361	PDF

mosfet ghz Abstract: mrf182 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF182 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect TVansistors 30 W, 1.0 GHz, 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFETs • High gain, rugged device	OCR Scan	MRF182 MRF182 mosfet ghz	PDF
vk200 rf choke Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.	OCR Scan	MRF156 MRF156R 340G-02, O-264AA) VK200 MRF156120 MRF156R 83-j3 vk200 rf choke VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 Arco 469 ceramic capacitor	PDF
SU 179 transistor Abstract: s227 Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen	OCR Scan	MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227	PDF
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ	PDF
MRF860 Abstract: 2n2222 npn transistor 2N2222 rf Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	MRF860/D 2PHX33728Q-0 MRF860 2n2222 npn transistor 2N2222 rf	PDF
4C6 toroid Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125 Text: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET	OCR Scan	b3b72SH TP1940 20Bias 4C6 toroid UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125	PDF
MRF221 Abstract: 2N6081 Text: I MOTOROLA SC XSTRS/R F 4bE b3h?asM oo^msa ? D MOTOROLA SEMICONDUCTOR 2N6081 TECHNICAL DATA MRF221 The RF Line 15 W - 175 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed fo r 1 2.5 V o lt V H F large-signal power am plifier applica	OCR Scan	2N6081 MRF221 20/4B 2N6081, 00T4124 MRF221 2N6081	PDF
transistor BD 135 Abstract: capacitor J336 J336 transistor k 2843 TPV8200B EQUIVALENT OF K 2843 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza	OCR Scan	TPV8200B TPV8200B 156-C transistor BD 135 capacitor J336 J336 transistor k 2843 EQUIVALENT OF K 2843	PDF
mallory 170 Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170	PDF
mhw916 Abstract: No abstract text available Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA b y M HW 916/D M HW 916 The RF Line UHF Silicon FET Power Amplifier Motorola Preferred Device 16 WATT 925-960 MHz RF POWER AMPLIFIER Designed specifically for the European Digital Extended Group Special	OCR Scan	916/D MHW916 MHW916	PDF

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MOTOROLA RF POWER Search Results

MOTOROLA RF POWER Result Highlights (5)

MOTOROLA RF POWER Datasheets Context Search

CA2820 TRW

HP RF TRANSISTOR GUIDE

Motorola transistors MRF646

940 629 MOTOROLA

08055C103KAT

TO272

1206 cms diode

MRF156R

C12R1

TO272

transistor 6c x

GM 950 motorola

J361 IC

J595

mosfet ghz

vk200 rf choke

SU 179 transistor

rohm mtbf

MRF860

4C6 toroid

MRF221

transistor BD 135

mallory 170

mhw916