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    Kyocera AVX Components TAJE226M035RNJ

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    Kyocera AVX Components TAJE226M035R

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    TAJE226M035R Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TAJE226M035R AVX Standard Tantalum Capacitor Original PDF
    TAJE226M035R AVX CAP 22UF 35V 20% TANT SMD-7343-43 TR-7 Original PDF
    TAJE226M035RNJ AVX CAP 22UF 35V 20% TANT SMD-7343-43 TR-7 Original PDF

    TAJE226M035R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


    Original     		PDF MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3


    Original     		PDF MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage


    Original     		PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1

    J1103

    Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J1103 J294 MRF5S21150H MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966

    465B

    Abstract: AN1955 MRF5S21150 MRF5S21150R3 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3


    Original     		PDF MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150R3 465B AN1955 MRF5S21150 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF

    03B3

    Abstract: 1206 cms diode 100B100JCA500X MW4IC915GMBR1 MW4IC915MBR1 TAJE226M035R bourns 3224w
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM


    Original     		PDF MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 03B3 1206 cms diode 100B100JCA500X MW4IC915GMBR1 TAJE226M035R bourns 3224w

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150HR3 MRF5S21150HSR3

    vishay mosfet MTBF

    Abstract: J29-4 465B AN1955 MRF5S21150 MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150R3 MRF5S21150SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3


    Original     		PDF MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3 vishay mosfet MTBF J29-4 465B AN1955 MRF5S21150 MRF5S21150HSR3

    1206 cms diode

    Abstract: 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915MBR1
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 3, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 1206 cms diode 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage


    Original     		PDF MW4IC915 MW4IC915MB/GMB MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1

    GM 950 motorola

    Abstract: MW4IC915MBR1 Marking Z7 Gate Driver 1206 cms 1206 cms diode marking Z4 MW4IC915MB A113 AN1955 AN1987
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


    Original     		PDF MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 GM 950 motorola Marking Z7 Gate Driver 1206 cms 1206 cms diode marking Z4 MW4IC915MB A113 AN1955 AN1987

    CM16C550P

    Abstract: 4.7 uf/50v smd capacitor sad1 diode smd NPN CD100 transistor SPER 1A1 C4 0.1 uf/50v smd capacitor DIALCO C01100 cm16c550pe TRAY DAEWON TSOP
    Text: Rev. 2.1 i960 Rx I/O Processor Design Guide November, 1997 Order Number: 273004-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


    Original     		PDF 74ALS245A 74ALS245AD-T 74AS244 SN74AS244DWR 74F07 N74F07AD 74F04 74F04D 74F32 SN74F32DR CM16C550P 4.7 uf/50v smd capacitor sad1 diode smd NPN CD100 transistor SPER 1A1 C4 0.1 uf/50v smd capacitor DIALCO C01100 cm16c550pe TRAY DAEWON TSOP

    A113

    Abstract: AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915NBR1 GM 950 motorola 686 CAPACITOR
    Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage


    Original     		PDF MW4IC915 MW4IC915MB/GMB MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 A113 AN1955 AN1987 MW4IC915 MW4IC915GMBR1 GM 950 motorola 686 CAPACITOR

    08051J5R6BBT

    Abstract: j452 cms 920
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 08051J5R6BBT j452 cms 920

    mw4ic915nb

    Abstract: AN1977 AN1987 MW4IC915GNBR1 MW4IC915NBR1 A113 AN1955 ic marking z7 GM 950 motorola
    Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1 mw4ic915nb AN1977 AN1987 MW4IC915GNBR1 A113 AN1955 ic marking z7 GM 950 motorola

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    J294

    Abstract: TAJE226M035R 465B AN1955 MRF5S21150HR3 MRF5S21150HSR3 j246
    Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J294 TAJE226M035R 465B AN1955 MRF5S21150HSR3 j246

    08055C103KAT

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC915/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High


    Original     		PDF MW4IC915/D MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 DEVICEMW4IC915/D 08055C103KAT

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110 MRF5S21150SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line


    Original     		PDF MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 150R3