4C6 toroid

Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET

d 417 transistor

Abstract: 417 TRANSISTOR 2N6426 MMBTA05 MMBTA06 MMBTA13 MMBTA14 MMBTA20 MMBTA42 MMBTA43
Contextual Info: MOTOROLA 6 3 6 7 2- 5 4 BE^b3b72SH SC -CXSTRS/R FJ MOTOROLA SC 96D C X S T R S !/ R F OOflSOSt 82056 M A X IM U M R A TIN G S r Rating Sym bol MMBTA05 MMBTA06 U nit Collector-Em itter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage

221A-06

Abstract: AN569 MTP1N50 motorola 585 MOTOROLA N-Channel MOSFET 205 Mosfet MOTOROLA
Contextual Info: bflE T> • MOTOROLA SC XSTRS/R F b3b72SH OCHflbSM 43b « H O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T T h is T M O S P o w e r FET is designed fo r high voltage, high speed

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­

TP3022A

Abstract: UHF/power amplifiers motorola rf Power Transistor
Contextual Info: MOTOROLA SC XSTRS/R F Mb E D • b3b72SH ä ■ MOTb OD'ÌSSIS ^ - MOTOROLA 3 3 -0 7 ■ SEMICONDUCTOR TECHNICAL DATA Advance Inform ation The RF Line UHF P o w e r T ra n sis to r . . . designed for com m on-em itter operation in the 900 MHz m obile radio band. Use

2C3866AHV

Abstract: chip die npn transistor 2C3866A
Contextual Info: b3b72SH O O ^ f e ? 7 4bE I> •H0TbT:3 l*3 3 Î10T0R0LA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 2C3866AHV Chip NPN Silicon High-Frequency Transistor u m Discrete Military Operation . .designed for amplifier and oscillator applications. Suitable for use as output, driver or

ZENER DIODE 47

Abstract: zener diode 4.7 v c031 diode linear amplifier 470-860 AE50070 2N2219 MOTOROLA 4L126 TRANSISTOR MOTOROLA c031 ZENER DIODE 4.7
Contextual Info: MOTOROLA SC X S T R S / R F MbE D • ^ ^ MOTOROLA ■SEMICONDUCTOR i h HOTb b3b72SH QOTbäaS T h h h h h h h ih h h h i TECHNICAL DATA TPV657 The RF Line UHF Linear Pow er Transisto r 6 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . designed for high power stages in Band V TV transposer am plifiers. Gold metallized

fy sot 143

Abstract: Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA
Contextual Info: HOTOROLA SC XSTRS/R F bTE b3b72SH T> G100147 SSk «nOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR 5 2 1 LT 1 * MRF 521 MRF 5 2 1 1 LT 1 The RF Line PNP Silicon High-Frequency Transistor •Motorola P r r t T f d D«vtce Designed primarily for use in the high-gain, low-noise small-signal amplifiers

Contextual Info: MOTOROLA SC CXSTRS/R F 4bE D b3b72SH 00=12421 7 • MOTb MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M D2219AF DM0 Discrete M ilitary Products NPIM S ilic o n Dual Sm all-Signal T ra n sisto r Suffixes: H X, H X V /#///#/ Processed per MIL-S-19500/251 . . . d e s ig n e d fo r g e n e ra l-p u rp o se sw itch in g and a m p lifie r a p p lica tio n s

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low S kew CMOS PLL Clock Drivers, 3 -S ta te 55, 70, 100, 133 and 160MHz Versions The MC88915T Clock Driver utilizes phase-locked loop technology to lock its low skew outputs’ frequency and phase onto an input reference

vitramon CAPACITOR

Abstract: BD135 TRANSISTOR TP5040 n4007 sprague capacitor atc100a tp504 VC80 atc100a101kp 1n4007 diode
Contextual Info: MOTOROLA SC CXSTRS/R F T> 4bE • b3b?2S4 □Q'îSaSS MOTOROLA T m SEM ICO N D U CTO R 5- 3 MOTb *1 3 ' I I TECHNICAL DATA T P 5 04 0' The RF Line U H F P o w e r T ra n sisto r 40 W — 380 to 512 MHz UHF POWER TRANSISTOR NPN SILICON . . . d e sign e d for 24 Volt U H F large-signal co m m o n emitter am plifier applications in

2N60E

Abstract: MTA2N60E 1N60E MTA1N60E MTA1N60 1B5 zener diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA1N60E Fully Isolated TMOS E-FET™ Pow er Field E ffect Transistor Motorola Prcforrvd Devio« N-Channel Enhancement-Mode Silicon Gate Isolated TO-22Q TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on - 8-0 OHM

80487

Abstract: 74hc541
Contextual Info: D E I b 3 b 7 2 S S 00fl04fi4 ‘ i M O T O R O L A SC -CLOGICï 05 MOTOROLA 1 T -.5 S3 -Û 7 S E M IC O N D U C T O R TECHNICAL DATA MC54/74HC541 O ctal 3-State N oninverting Buffer/Line Driver/Line Receiver J SU FFIX C ER A M IC C A S E 732-03 High-Performance Silicon-Gate C M O S

mc14628

Abstract: C4538 DT511 MC14628B 74HC4538M HC4538 Transistor c54
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MC54/74HC4538 D ual Precision M o n o sta b le M ultivibrator Retriggerable, Resettable J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM OS N SUFFIX PLASTIC CASE 648-06 The MC54/74HC4538 is identical in pinout to the MC14538B and the MC14628B.